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S5B V7G

DIODE GEN PURP 100V 5A DO214AB

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
二极管类型
标准
电压 - DC 反向(Vr)(最大值)
100V
电流 - 平均整流(Io)
5A
不同 If 时的电压 - 正向(Vf
1.15V @ 5A
速度
标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr)
1.5µs
不同 Vr 时的电流 - 反向漏电流
10µA @ 100V
不同 Vr,F 时的电容
60pF @ 4V,1MHz
安装类型
表面贴装
封装/外壳
DO-214AB,SMC
供应商器件封装
DO-214AB(SMC)
工作温度 - 结
-55°C ~ 150°C
文档预览
S5A - S5M
Taiwan Semiconductor
5A, 50V - 1000V Surface Mount Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Low forward voltage drop
High current capability
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
5
50 - 1000
100
150
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
S5A
S5A
50
35
50
S5B
S5B
100
70
100
S5D
S5D
200
140
200
S5G
S5G
400
280
400
5
100
- 55 to +150
- 55 to +150
S5J
S5J
600
420
600
S5K S5M
S5K
800
560
800
S5M
1000
700
1000
V
V
V
A
A
°C
°C
UNIT
1
Version:D1708
S5A - S5M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
13
47
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 5A, T
J
= 25°C
(2)
SYMBOL
V
F
I
R
C
J
t
rr
TYP.
-
-
-
60
1500
MAX.
1.15
10
250
-
-
UNIT
V
µA
µA
pF
ns
Reverse current @ rated V
R
per diode
Junction capacitance
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R7
R6
S5x
(Note 1)
H
M6
V7
V6
Note :
1. "x" defines voltage from 50V (S5A) to 1000V (S5M)
G
PACKING CODE
SUFFIX
PACKAGE
SMC
SMC
SMC
Matrix SMC
Matrix SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
S5AHR7G
PART NO.
S5A
PART NO.
SUFFIX
H
PACKING
CODE
R7
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:D1708
S5A - S5M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
6
AVERAGE FORWARD CURRENT (A)
100
Fig.2 Typical Junction Capacitance
4
3
2
1
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
JUNCTION CAPACITANCE.(pF)
5
10
RESISTIVE OR
INDUCTIVE LOAD
f=1.0MHz
Vsig=50mVp-p
1
1
10
REVERSE VOLTAGE (V)
100
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
100
10
Fig.4 Typical Forward Characteristics
1
10
0.1
UF1DLW
T
J
=125°C
10
T
J
=125°C
T
J
=25°C
(A)
1
1
0.01
Pulse width
Pules width=300μs
1% duty cycle
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
T
J
=25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.001
0.1
0.6
0.3
0.7
0.4
0.8
0.5
0.9
0.6
1
0.7
1.1
1.2
FORWARD VOLTAGE (V)
3
Version:D1708
S5A - S5M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
100
8.3ms Single Half Sine Wave
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
4
Version:D1708
S5A - S5M
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min.
2.90
6.60
5.59
2.00
1.00
7.75
0.10
0.15
Max.
3.20
7.11
6.22
2.62
1.60
8.13
0.20
0.31
Unit (inch)
Min.
0.114
0.260
0.220
0.079
0.039
0.305
0.004
0.006
Max.
0.126
0.280
0.245
0.103
0.063
0.320
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
3.30
2.50
6.80
4.40
9.40
Unit (inch)
0.130
0.098
0.268
0.173
0.370
MARKING DIAGRAM
P/N
G
YW
F
=Marking Code
=Green Compound
=Date Code
=Factory Code
5
Version:D1708
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