Stanford Microdevices’ SCA-11 is a high performance Gallium
Arsenide MESFET MMIC Amplifier. This device is fabricated
using Stanford’s reliable 0.5 micron gate MESFET process.
This amplifier is internally matched with typical VSWR of
1.6:1. Its positive gain slope makes it an ideal choice for
cascading multiple amplifiers without sacrificing high
frequency response.
These unconditionally stable amplifiers provides 10dB of gain
and +19dBm of 1dB compressed power and require only a
single positive 5-volt supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation.
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
SCA-11
0.3-3 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
Vd= 5V, Id= 90mA
21
20
Product Features
•
High Output Power : +19dBm P1dB
•
Very Flat Gain : +/-0.5dB from 0.3-2.0 GHz
•
Cascadable 50 Ohm : 1.6:1 VSWR
•
Low Noise Figure : 4.5dB Typical
•
Patented GaAsHBT Technology
•
Operates From Single Supply
•
Low Thermal Resistance Package
Applications
•
Cellular, PCS, CDPD, Wireless Data, SONET
50 Ohm Gain Blocks
dBm
19
18
17
0.3
1
2
3
GHz
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e te r s : Te s t C o n d itio n s :
V
D
= + 5 .0 V , Z
0
= 5 0 O h m s
U n its
M in .
Ty p .
M ax.
G
P
G
F
P
1dB
NF
VSW R
P o w e r G a in
G a in F la t n e s s
G a in F la t n e s s o v e r a n y 1 0 0 M H z b a n d
O u t p u t P o w e r a t 1 d B C o m p r e s s io n
N o is e F ig u r e
In p u t / O u tp u t
T h ir d O r d e r I n t e rc e p t P o in t
O u t p u t To n e s @ 0 d B m 1 0 M H z a p a r t
G r o u p D e la y
R e v e rs e I s o la t io n
D e v ic e G a in Te m p e r a t u r e C o e f f ic ie n t
D e v ic e C u r r e n t
f = 0 .3 -3 .0 G H z
f = 0 .3 -2 .0 G H z
dB
dB
dB
dBm
dB
-
dBm
8
10
+ /- 0 .5
+ /- 0 .1
+19
3 .5
1 .5
27
f = 0 .3 -3 .0 G H z
f = 0 .3 -3 .0 G H z
f = 0 .3 -2 .0 G H z
f = 0 .3 -2 .0 G H z
IP
3
T
D
IS O L
d G /d T
I
D
f = 1 .9 G H z
f = 0 .3 -3 .0 G H z
psec
dB
d B /d e g C
100
14
-0 .0 0 1 5
40
75
120
V
D
= + 5 .0 V
mA
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-129
SCA-11 0.3-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°
C (Vds = 5.0V, Ids = 75mA)
|S11| vs. Frequency
-8
-10
-12
14
12
10
|S21| vs. Frequency
dB
-14
-16
-18
0.3
1
2
3
dB
8
6
4
0.3
1
2
3
GHz
GHz
|S12| vs. Frequency
-10
-12
-14
-10
-12
-14
|S22| vs. Frequency
dB
-16
-18
-20
0.3
1
2
3
dB
-16
-18
-20
0.3
1
2
3
GHz
GHz
50 Ohm Gain Blocks
TOIP vs. Frequency
30
28
dBm
26
24
0.3
1
2
3
GHz
Typical S-Parameters Vds = 5.0V
Freq GHz
.300
.500
.750
.900
1.00
1.50
2.00
2.50
3.00
|S11|
S11 Ang
|S21|
S21 Ang
|S12|
S12 Ang
|S22|
S22 Ang
.175
.115
.075
.065
.063
.077
.136
.282
.431
-73
-107
-134
-149
-162
131
86
35
-30
2.942
3.220
3.188
3.116
3.077
3.007
3.025
3.179
3.341
160
139
114
101
91
48
6
-38
-91
.132
.119
.113
.112
.111
.103
.085
.045
.013
-27
-44
-59
-69
-76
-117
-164
139
-69
.104
.104
.114
.168
.183
.250
.304
.339
.344
-131
136
60
30
12
-63
-136
135
35
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-130
SCA-11 0.3-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
P a r a m e te r
D e v ic e C u r r e n t
P o w e r D is s ip a tio n
R F In p u t P o w e r
J u n c tio n Te m p e r a tu r e
O p e r a tin g Te m p e r a tu re
S to r a g e Te m p e r a t u r e
A b s o lu te
M a x im u m
135m A
820m W
200m W
+150C
- 4 5 C to + 8 5 C
- 6 5 C to + 1 5 0 C
+100C
10,000
+55C
1,000,000
MTTF vs. Temperature
@ Id = 75mA
Lead
Temperature
MTTF (hrs)
+70C
100,000
Thermal Resistance (Lead-Junction): 155° C/W
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
= 5.0 V
5.0V
Mounting Instructions
The data shown was taken on a 31mil thick FR-4 board with
1 ounce of copper on both sides.
The board was mounted to a baseplate with 3 screws as shown.
The screws bring the top side copper temperature to the same
value as the baseplate.
1. Use 1 or 2 ounce copper, if possible.
2. Solder the copper pad on the backside of the device
package to the ground plane.
3. Use a large ground pad area with many plated through-holes
as shown.
4. If possible, use at least one screw no more than 0.2 inch
from the device package to provide a low thermal resistance
path to the baseplate of the package.
5. Thermal resistance from ground lead to screws is
