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SD5001N

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

器件类别:分立半导体    晶体管   

厂商名称:SIPEX

厂商官网:http://www.sipex.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Reach Compliance Code
unknown
最大漏极电流 (Abs) (ID)
0.05 A
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-609代码
e0
工作模式
ENHANCEMENT MODE
最高工作温度
85 °C
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
0.5 W
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
Base Number Matches
1
文档预览
High-Speed DMOS Quad FET
Analog Switch Arrays
CORPORATION
SD5000 / SD5001 / SD5002
SD5400 / SD5401 / SD5402
FEATURES
DESCRIPTION
The SD5000 Series are monolithic arrays of four bidirectional,
high performance analog switches manufactured with
implanted high-speed, high-voltage and low resistance
double-difused MOS (DMOS) process.
The maximum
threshold of 2V permits simple TTL and CMOS driving in
small signal applications.
ORDERING INFORMATION
Part
SD5000N
SD5001N
SD5002N
XSD5000
XSD5001
XSD5002
SD5400CY
SD5401CY
SD5402CY
XSD5400
XSD5401
XSD5402
Package
Plastic DIP Package
Plastic DIP Package
Plastic DIP Package
Sorted Chips in Carriers
Sorted Chips in Carriers
Sorted Chips in Carriers
Plastic DIP Package
Plastic DIP Package
Plastic DIP Package
Sorted Chips in Carriers
Sorted Chips in Carriers
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
Low PropagatiomTime . . . . . . . . . . . . . . . . . . . . 600 psec
Low On Resistance
Low Insertion Loss
Low Capacitance:
– Analog Input . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5pF typ.
– Input (Gate) . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.
– Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
– Feedback. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.
Low Crosstalk . . . . . . . . . . . . . . . . . . . . . -107dB @ 3kHz
Bidirectional Operation
APPLICATIONS
Analog Switching
Audio Routing
Sample & Hold
Crosspoint Switches
Choppers
Video Switches
FUNCTIONAL BLOCK DIAGRAM
SO PIN CONFIGURATION
DUAL IN LINE PACKAGE
G
1
S
2
S
1
1
2
14
S
1
13
NC
12
G
1
11
D
1
10
D
4
9
8
TOP VIEW
G
4
S
4
D
1
1
16
D
4
15
NC
14
G
4
13
S
4
12
S
3
11
G
3
10
NC
9
TOP VIEW
D
3
1Q-22
D
1
BODY
BODY
G
1
S
1
S
2
2
3
4
5
G
2
G
2
3
S
2
D
2
D
2
4
D
3
5
G
3
D
3
S
3
G
3
6
S
3
G
2
6
NC
7
8
G
4
7
D
2
1Q-21
D
4
1Q-20
S
4
SUBSTRATE
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
SD5000 / SD5001 / SD5002
SD5400 / SD5401 / SD5402
DC ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C
SYMBOL
V
analog
PARAMETERS
Analog Signal Range
SD5000/SD5400
MIN
-10
TYP MAX
+10
SD5001/SD5401
MIN
-5
TYP MAX
+5
SD5002/SD5402
MIN
-7.5
TYP MAX
+7.5
V
UNITS
CORPORATION
CONDITIONS
Breakdown Voltage
BV
DS
BV
SD
BV
DB
BV
SB
Drain-Source
Source-Drain
Drain-Body
Source-Body
20
20
25
25
25
10
10
15
15
25
15
15
22.5
22.5
25
V
V
GS
= V
BS
= -5V, I
D
= 10nA
V
GD
= V
BD
= -5V, I
S
= 10nA
V
GB
= 0V, I
D
= 10nA Source Open
V
GB
= 0V, I
S
= 10µA, Drain Open
Leakage Current - SD5000/SD5400
I
DS(OFF)
I
SD(OFF)
I
GBS
Drain-Source
Source-Drain
Gate
1.0
1.0
10.0
10.0
1.0
nA
nA
µA
V
GS
= V
BS
= -5V, V
DS
= 20V
V
GD
= V
BD
= -5V, V
SD
= 20V
V
DB
= V
SB
= 0V, V
GB
= 30V
Leakage Current - SD5001/SD5401
I
DS(OFF)
I
SD(OFF)
I
GBS
Drain-Source
Source-Drain
Gate
1.0
1.0
10.0
10.0
1.0
nA
nA
µA
V
GS
= V
BS
= -5V, V
DS
= 10V
V
GD
= V
BD
= -5V, V
SD
= 10V
V
DB
= V
SB
= 0V, V
GB
= 25V
Leakage Current - SD5002/SD5402
I
DS(OFF)
I
SD(OFF)
I
GBS
V
T
Drain-Source
Source-Drain
Gate
Threshold Voltage
Drain-Source ON
Resistance
Match ON Resiatance
0.1
1.0
50
30
23
19
1
2.0
70
0.1
1.0
50
30
23
19
1
2.0
70
0.1
1.0
1.0
1.0
50
30
23
19
1
10.0
10.0
1.0
2.0
70
nA
nA
µA
V
V
GS
= V
BS
= -5V, V
DS
= 15V
V
GD
= V
BD
= -5V, V
SD
= 15V
V
DB
= V
SB
= 0V, V
GB
= 30V
V
DS
= V
GS
= V
T
, V
SB
= 0V, I
D
= 1µA
V
GS
= 5V, V
SB
= 0V, I
D
= 1mA
V
GS
= 10V, V
SB
= 0V, I
D
= 1mA
V
GS
= 15V, V
SB
= 0V, I
D
= 1mA
V
GS
= 20V, V
SB
= 0V, I
D
= 1mA
V
GS
= 5V
R
DS(ON)
R
DS(ON)
5
5
5
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C
SYMBOL
g
fs
Capacitances
C
G
C
D
C
S
C
DG
C
T
Gate Node
Drain Node
Source Node
Reverse Transfer
Crosstalk
2.4
1.3
3.5
0.3
107.0
3.5
1.5
4.0
0.5
PARAMETER
Forward Transconductance
MIN
10
TYP
12
MAX
UNITS
mS
CONDITIONS
V
DS
= 10V, I
D
= 20mA, V
SB
= 0V, f = 1kHz
pF
V
DS
= 10V, f = 1MHz, V
GS
= V
BS
= -15V
dB
f = 3kHz, R
G
= 600Ω
SWITCHING CHARACTERISTICS
T
A
= 25
o
C
SYMBOL
t
d(ON)
t
r
t
OFF*
PARAMETER
Turn-On Time
Rise Time
Turn-Off Time
MIN
TYP
0.7
0.8
10.0
MAX
1.0
1.0
nsec
UNITS
CONDITIONS
R
L
= 680Ω, R
G
= 51
V
DD
= 5V
V
G(ON)
= 10V
*t
OFF
is dependent on RL and C and does not depend on the device characteristics.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
CORPORATION
SD5000 / SD5001 / SD5002
SD5400 / SD5401 / SD5402
ABSOLUTE MAXIMUM RATINGS
SYMBOL
Breakdown Voltage
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
Drain-Source
Source-Drain
Drain-Body
Source-Body
Gate-Source
Gate-Body
Gate-Drain
20
20
25
25
30/ - 25
30/ - 0.3
30/ - 25
10
10
15
15
25/ - 15
25/ - 0.3
30/ - 15
15
15
22.5
22.5
30/ - 22.5
30/ - 0.3
30/ - 22.5
V
PARAMETER
SD5000/SD5400
MAX. VALUE
SD5001/SD5401
MAX. VALUE
SD5002/SD5402
MAX. VALUE
UNITS
ABSOLUTE MAXIMUM
SYMBOL
I
D
PARAMETER
Drain Current
VALUE
50
UNIT
mA
Temperature Range
T
J
T
S
Operating
Storage
-55 to +85
-55 to +150
o
C
Power Dissipation
P
D
P
D
Package
Each Device
640 (Ni\ote 1)
mW
300 (Note 2)
Note 1: Linear Derating Factor - 10.7mW/
o
C above 25
o
C
Note 2: Linear Derating Factor - 5.0mW/
o
C above 25
o
C
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
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参数对比
与SD5001N相近的元器件有:SD5401CY。描述及对比如下:
型号 SD5001N SD5401CY
描述 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
是否Rohs认证 不符合 不符合
Reach Compliance Code unknown unknown
最大漏极电流 (Abs) (ID) 0.05 A 0.05 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609代码 e0 e0
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 85 °C 125 °C
极性/信道类型 N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.5 W 0.5 W
表面贴装 NO YES
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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