Green
Product
SDU/D02N60A
Preliminary
S a mHop Microelectronics C orp.
600V N-Channel Planar MOSFET
PRODUCT SUMMARY
V
DSS
600V
FEATURES
Low Crss (typical 3pF).
Fast Switching.
100% Avalanche Rated.
I
D
2A
R
DS(ON)
(m
Ω
) Max
4.4
@
VGS=10V,ID=1A
G
S
G
D
S
STU SERIES
TO - 252(D-PAK)
STD SERIES
TO - 251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
dv/dt
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Curren
Pulsed Drain Current, V
GS
=10V
Single Pulse Avalanche Energy
Peak Diode Recovery Energy
Power Dissipation
Linear Derating Factor
c
a
b
Max.
600
±30
T
C
=25°C
T
C
=100°C
2
1.2
8
106
4.5
T
C
=25°C
T
C
>25°C
42
0.33
-55 to 150
Units
V
V
A
A
A
mJ
V/ns
W
W/°C
°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
JC
R
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
3
50
°C/W
°C/W
Details are subject to change without notice.
Jul,22,2009
1
www.samhop.com.tw
SDU/D02N60A
Preliminary
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
TBD
20
100
-100
V/
°
C
uA
nA
nA
OFF CHARACTERISTICS
V
(BR)DSS
Drain-Source Breakdown Voltage
V
(BR)DSS
Breakdown Voltage Temperature
Coefficient
/ T
J
I
DSS
Drain-to-Source Leakage Current
I
GSSF
I
GSSR
V
GS
=0V , I
D
=250uA
600
Reference to 25
°
C,
I
D
=250uA
V
DS
=600V , V
GS
=0V
Gate-Body Leakage Current, Forward V
DS
=0V , V
GS
=30V
Gate-Body Leakage Current, Reverse V
DS
=0V , V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Static Drain-Source On-Resistance
Forward Transconductance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=1A
d
V
DS
=15V , I
D
=1A
d
2.0
4.0
4.4
10
V
ohm
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller") Charge
V
DS
=25V,V
GS
=0V
f=1.0MHz
240
35
3
V
DD
=300V
I
D
=2A
R
G
=10 ohm,R
D
=150 ohm
V
GS
=10V
d
V
DS
=300V,I
D
=2A,
V
GS
=10V
d
13
38
24
51
8.8
12.1
5.1
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Source Current(Body Diode)
I
SM
V
SD
Notes :
a. Repetitive Rating Pulse width limited by maximum junction temperature.
b. VDD=50V, starting T
J
=25
°
C,L=53mH, R
G
=25
Ω
, I
AS
=2A
c. I
SD
< 2A, di/dt < 100A/us, V
DD
< V
(BR)DSS
, T
J
< 150
°
C
d. Pulse Test Pulse width < 300us, Duty cycle < 2%.
Maximum Pulsed Source Current(Body Diode)
Drain-Source Diode Forward Voltage V
GS
=0V,I
S
=1A
d
2
8
1.5
A
A
V
Jul,22,2009
2
www.samhop.com.tw
SDU/D02N60A
Preliminary
10
V
GS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
, Drain Current(A)
I
D
, Drain Current(A)
1
150
°C
25
°C
1
-55
°C
0.1
0.01
0.1
1
Notes :
1. 250us Pulse Test
2. Tc = 25
°C
Notes :
1. V
DS
=40 V
2. 250us Pulse Test
0.1
10
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
12
3.0
Figure 2. Transfer Characteristics
R
DS(ON)
, On-Resistance
Normalized
10
2.5
2.0
1.5
1.0
0.5
0
-100
R
DS(on)
(m
Ω
)
8
6
4
2
0
0
1
2
V
GS
=10V
V
GS
=10V
I
D
=1A
V
GS
=20V
3
4
5
-50
0
50
100
150
200
Tj( C)
I
D
, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
Figure 4. On-Resistance Variation with
Drain Current and Temperature
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
I
D
=250 uA
1.1
Is, Source-drain current (A)
1.0
1
25
°C
0.9
150
°C
0.8
-100
0.1
-50
0
50
100
150
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj, Junction Temperature ( C)
V
SD
, Body Diode Forward Voltage(V)
Figure 5. Breakdown Voltage Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
Jul,22,2009
3
www.samhop.com.tw
SDU/D02N60A
Preliminary
500
12
V
GS
, Gate to Source Voltage (V)
450
C, Capacitance (pF)
400
350
300
250
200
150
100
50
0
0.1
10
8
6
4
2
0
V
DS
=300V
I
D
=2A
Ciss
Coss
Crss
1
10
0
2
4
6
8
10
V
DS
, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 7. Capacitance
Figure 8. Gate Charge
10
I
D
, Drain Current (A)
1
R
D
S
(
)
ON
L im
it
10
0u
1m
10
1 0
ms
0m
DC
s
s
s
0.1
V
GS
=10V
Single Pulse
T
A
=25 C
1
10
100
1000
0.01
V
DS
, Drain-Source Voltage (V)
Figure 9. Maximum Safe Operating Area
Jul,22,2009
4
www.samhop.com.tw
SDU/D02N60A
Preliminary
15V
V (B R )
DS S
tp
DR IV E R
V
DS
L
R
G
20V
D.U.T
I
AS
tp
0.01
+
V
DD
-
I
AS
Unclamped Inductive Waveforms
Figure 10b.
Unclamped Inductive Test Circuit
Figure 10a.
r(t),Normalized Effective
Transient Thermal Impedance
D=0.5
10
0
0.2
0.1
0.05
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P* R
JA
(t)
4. Duty Cycle, D=t1/t2
10
-1
0.02
0.01
Single Pulse
-5
-4
-3
-2
-1
10
10
10
10
10
10
0
10
1
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
Jul,22,2009
5
www.samhop.com.tw
stm32/stm8
