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SDR60010HCTS1

Rectifier Diode, 1 Phase, 1 Element, 60A, 100V V(RRM), Silicon, HERMETIC SEALED, SMD1, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

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器件参数
参数名称
属性值
厂商名称
SSDI
包装说明
R-XBCC-N3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW LEAKAGE CURRENT
应用
HYPER FAST RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-XBCC-N3
最大非重复峰值正向电流
250 A
元件数量
1
相数
1
端子数量
3
最大输出电流
60 A
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
认证状态
Not Qualified
最大重复峰值反向电压
100 V
最大反向恢复时间
0.035 µs
表面贴装
YES
端子形式
NO LEAD
端子位置
BOTTOM
文档预览
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR60010HCT
thru
SDR60020HCT
60 AMP
HYPER FAST
CENTERTAP RECTIFIER
100 - 200 VOLTS
35 nsec
FEATURES:
Hyper Fast Recovery: 35 ns Maximum
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package, isolated
(TO-254, Z) or hot case (SMD1)
Gold Eutectic Die Attach Available
Ultrasonic Aluminum Wire Bonds
TX, TXV, or Space Level Screening
Available
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR60 __ H CT __ __ __
2/
│ │ └
Screening
│ │
__ = Not Screened
│ │
│ │
TX = TX Level
│ │
│ │
TXV = TXV Level
│ │
│ │
S = S Level
│ │
│ │
│ └
Lead Bend Options (TO-254, Z)
│ │
│ │
DB = Down Bend
│ │
UB = Up Bend
│ │
S1= SMD1
Package
│ │
M = TO-254
│ │
Z = TO-254Z
│ │
│ │
│ └
Recovery Time
H = Hyper Fast
Family/Voltage
010 = 100V
015 = 150V
020 = 200V
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
3/
Average Rectified Forward Current
4/
(Resistive Load, 60 Hz Sine Wave, T
C
= 100ºC)
Symbol
SDR60010
SDR60015
SDR60020
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
& T
STG
Value
100
150
200
60
250
-65 to +200
1.5
1.0
1.8
1.2
Units
Volts
Amps
Amps
ºC
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25ºC, per leg)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case, each individual diode, SMD1
Junction to Case, SMD1
4/
Junction to Case, each individual diode, TO-254, Z
Junction to Case, TO-254, Z
4/
NOTES:
1/
For ordering information, price, and availability,
contact factory.
2/
Screening based on MIL-PRF-19500. Screening flows
available on request.
3/
Higher voltages available.
4/
Both legs tied together.
R
θJC
ºC/W
SMD1
TO-254
TO-254Z
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0147B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR60010HCT
thru
SDR60020HCT
Symbol
I
F
= 10 A
I
F
= 20 A
I
F
= 30 A
I
F
= 10 A
I
F
= 20 A
I
F
= 30 A
I
F
= 10 A
I
F
= 20 A
I
F
= 30 A
T
A
= 25ºC
T
A
= 100ºC
T
A
= 125ºC
T
A
= 150ºC
V
F1
V
F2
V
F3
Electrical Characteristic (Per Leg)
Instantaneous Forward Voltage Drop
(T
A
= 25ºC, 300 – 500 µsec Pulse)
Instantaneous Forward Voltage Drop
(T
A
= -55ºC, 300 – 500 µsec Pulse)
Instantaneous Forward Voltage Drop
(T
A
= 125ºC, 300 – 500 µsec Pulse)
Reverse Leakage Current
(100% of rated V
R
, 300 µs pulse min.)
Reverse Recovery Time
(I
F
= 0.5 A, I
R
= 1 A, I
RR
= 0.25 A, T
A
= 25ºC)
Reverse Recovery Time
(I
F
= 10 A, dI
F
/dt = 100 A/us)
Junction Capacitance
(T
A
= 25ºC, f = 1 MHz)
T
A
= 25ºC
T
A
= 100ºC
V
R
= 5 V
DC
V
R
= 10 V
DC
Typ
0.80
0.84
0.88
0.90
0.95
0.97
0.64
0.70
0.74
0.025
2.5
8
30
30
45
2.6
85
5
Max
0.95
0.98
1.10
1.1
1.15
1.2
0.80
0.86
1.00
10
-
100
-
35
-
-
-
-
-
500
Units
V
DC
V
DC
V
DC
V
F4
V
F5
V
F6
V
F7
V
F8
V
F9
I
R1
I
R2
I
R3
I
R4
t
RR1
t
RR2
I
RM2
t
RR3
I
RM3
C
J
µA
nsec
nsec
A
nsec
A
pF
470
375
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0147B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR60010HCT
thru
SDR60020HCT
CASE OUTLINE: SMD1
CASE OUTLINE: TO-254
CASE OUTLINE: TO-254Z
Optional Lead Bent Configuration
Down Bent (DB Suffix)
Up Bent (UB Suffix)
Pin Assignment
Package
Pin 1 Pin 2
SMD1
TO-254
TO-254Z
Pin 3
Anode Cathode Anode
Anode Cathode Anode
Anode Cathode Anode
For information on curves, contact the Factory
Representative for Engineering Assistance.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0147B
DOC
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