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SFT5672M

Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

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器件参数
参数名称
属性值
厂商名称
SSDI
零件包装代码
TO-254AA
包装说明
FLANGE MOUNT, S-XSFM-P3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
30 A
集电极-发射极最大电压
120 V
配置
SINGLE
最小直流电流增益 (hFE)
20
JEDEC-95代码
TO-254AA
JESD-30 代码
S-XSFM-P3
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子形式
PIN/PEG
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5671 and SFT5672
SFT5672E
1/
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFT5671 __ __ __
SFT5672 __ __ __
SFT5672E __ __ __
│ │ └
Screening __
= No Screening
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
3/ 4/
│ └
Lead Bend
__
= Straight Leads
UB = Up Bend
DB = Down Bend
3/
Package
/3 = TO-3
M = TO-254
S1 = SMD 1
Maximum Ratings
Collector – Emitter Voltage
SFT5671
SFT5672
SFT5672E
SFT5671
SFT5672
SFT5672E
SFT5671, SFT5672
SFT5672E
TO-3 (T
C
25ºC)
TO-254 (T
C
25ºC)
SMD 1 (T
C
25ºC)
TO-3
TO-254
SMD 1
30 – 50 AMPS
90 - 130 Volts
High Power
NPN Transistors
Features:
High Frequency transistor with BV
CEO
to 130 Volts
Enhanced SOA capability and Fast Switching
High Power Dissipation 140 Watts
200
o
C Operating Temperature
TX, TXV, S-Level Screening per MIL-PRF-19500
available; consult factory
Enhanced performance version: SFT5672E
Symbol
V
CEO
Value
90
120
130
120
150
250
7
30
50
10
140
116
175
-65 to +200
1.25
1.5
1.0
Units
Volts
Collector – Base Voltage
V
CBO
V
EBO
I
C
I
B
P
D
T
J
& T
STG
R
0JC
Volts
Volts
Amps
Amps
Watts
ºC
ºC/W
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-3 (/3)
TO-254 (M)
SMD 1(S1)
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0076C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5671 and SFT5672
SFT5672E
unless otherwise specified, T
A
= 25ºC
* pulse test; pw= 300 us, duty cycle=
2%
(I
C
= 200 mA) SFT5671
SFT5672
SFT5672E
(I
C
= 200 mA, R
BE
= 50
Ω)
SFT5671
SFT5672
SFT5672E
Symbol
Min
90
120
130
110
140
250
120
150
350
7
––
––
––
––
––
––
––
––
––
––
––
––
20
20
10
10
10
––
––
––
––
––
––
Max
––
––
––
––
––
––
––
––
––
––
10
0.1
25
25
0.1
10
0.1
12
10
0.1
15
10
100
––
––
––
40
0.75
5.0
0.77
5.25
1.5
900
Units
Electrical Characteristics
Collector – Emitter Blocking Voltage *
BV
CEO
Volts
BV
CER
Collector – Emitter Blocking Voltage *
(I
C
= 200 mA, V
BE
= -1.5 V) SFT5671
SFT5672
SFT5672E
(I
E
= 100 µA)
(V
CE
= 80 V) SFT5671, SFT5672
SFT5672E
(V
CB
= 120 V) SFT5671
(V
CB
= 150 V) SFT5672
(V
CB
= 150 V) SFT5672E
(V
EB
= 7 V) SFT5671, SFT5672
SFT5672E
(V
CE
= 110 V, V
BE
= 1.5 V) SFT5671
(V
CE
= 135 V, V
BE
= 1.5 V) SFT5672
(V
CE
= 135 V, V
BE
= 1.5 V) SFT5672E
(V
CE
= 100 V, V
BE
= 1.5 V) SFT5671
(V
CE
= 100 V, V
BE
= 1.5 V) SFT5672
(I
C
= 15 A, V
CE
= 2 V)
(I
C
= 20 A, V
CE
= 5 V)
(I
C
= 50 A, V
CE
= 5 V) SFT5672E
(I
C
= 15 A, V
CE
= 2 V, T
A
= -65ºC)
(I
C
= 2 A, V
CE
= 10 V, f = 5 MHz)
TO-3, SMD 1 (I
C
= 15 A, I
B
= 1.2 A)
(I
C
= 30 A, I
B
= 6.0 A)
TO-254 (I
C
= 15 A, I
B
= 1.2 A)
(I
C
= 30 A, I
B
= 6.0 A)
BV
CEX
BV
EBO
I
CEO
I
CBO
I
EBO
Volts
Volts
mA
mA
mA
Emitter – Base Blocking Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
T
A
= 25ºC
T
A
= 25ºC
T
A
= 25ºC
T
A
= 150ºC
T
A
= 150ºC
DC Current Gain *
I
CEX
mA
h
FE
Small Signal Common-Emitter
Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
*
h
fe
V
CE (SAT)
Volts
Base-Emitter Saturation Voltage *
Output Capacitance
(I
C
= 15 A, I
B
= 1.2 A)
V
CB
= 10 V, I
E
= 0 A, f = 1.0MHz
V
CE
= 4.67 V, I
C
= 30 A, t= 1 s
V
CE
= 24 V, I
C
= 5.0 A, t= 1 s
V
CE
= 45 V, I
C
= 0.9 A, t= 1 s
V
CE
= 90 V, I
C
= 0.19 A, t= 1 s, SFT5671, SFT5672
V
CE
= 120 V, I
C
= 0.11 A, t= 1 s, SFT5672E
V
BE (SAT)
C
ob
SOA1
SOA2
SOA3
SOA4
SOA4
t
(on)
t
(off)
Volts
pF
Safe Operating Area
Turn-on Time
Turn-off Time
Available Part Numbers:
(V
CC
= 30 V, I
C
= 15.0 A
,
I
B1
= I
B2
= 1.2 A)
––
––
500
1.5
ns
µs
Base
Pin 3
Pin 3
Pin 3
SFT5671/3 SFT5671M SFT5671MUB SFT5671MDB SFT5671S1
SFT5672/3 SFT5672M SFT5672MUB SFT5672MDB SFT5672S1
SFT5672E/3 SFT5672EM SFT5672EMUB SFT5672EMDB SFT5672ES1
Package
TO-3 (/3)
TO-254 (M)
SMD 1(S1)
PIN ASSIGNMENT (Standard)
Collector
Emitter
Case
Pin 2
Pin 1
Pin 2
Pin 1
Pin 2
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