SGA3586ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA3586Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA3586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Gain (dB)
24
32
G A IN
IR L
Features
Gain & Return Loss vs. Frequency
I
D
= 35 mA (Typ.)
0
High Gain: 25dB at 850MHz
Cascadable 50Gain Block
High Output IP
3
: 25dBm typ.
at 1950MHz
Low Noise Figure: 2.5dB typ.
at 1950MHz
Low Current Draw: 35mA typ.
Single Voltage Supply Opera-
tion
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Applications
Return Loss (dB)
-10
SiGe BiCMOS
Si BiCMOS
16
ORL
8
-20
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
-30
T
LEAD
=+25ºC
0
0
1
2
3
4
5
-40
F requenc y (G H z)
Parameter
Small Signal Gain
Min.
22.5
18.0
Specification
Typ.
25.0
20.0
18.5
13.0
12.5
24.5
25.0
5000
Max.
27.5
22.0
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Condition
Output Power at 1dB Compression
11.0
Output Third Intercept Point
23.0
Bandwidth Determined by Return
Loss
Input Return Loss
9.5
11.0
dB
1950MHz
Output Return Loss
14.0
20.0
dB
1950MHz
Noise Figure
2.5
3.5
dB
1950MHz
Device Operating Voltage
3.0
3.25
3.5
V
Device Operating Current
31
35
39
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: I
D
=35mA Typ., T
LEAD
=25°C, Z
S
=Z
L
=50P
OUT
per tone=-5dBm, OIP
3
Tone Spacing=1MHz
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS130729
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA3586Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
70
6
+18
+150
-55 to +110
+150
Unit
mA
V
dBm
°C
°C
°C
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
65/EURFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen
free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Caution! ESD sensitive device.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
18.3
25.5
12.5
11.1
20.3
22.4
2.5
3500
MHz
14.8
Small Signal Gain
dB
28.2
27.1
25.0
19.7
Output Third Order Intercept Point
dBm
23.8
23.9
24.5
25.0
Output Power at 1dB Compression
dBm
13.0
13.0
13.0
12.5
Input Return Loss
dB
28.4
12.8
10.7
10.5
Output Return Loss
dB
31.5
17.1
15.9
20.5
Reverse Isolation
dB
29.4
29.0
28.1
24.1
Noise Figure
dB
2.4
2.5
2.5
Test Conditions: I
D
=35mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=100, T
L
=25°C, Z
S
=Z
L
=50
10.6
18.9
19.2
OIP
3
vs. Frequency
35
P
1dB
vs. Frequency
18
I
D
= 35 mA (Typ.)
I
D
= 35 mA (Typ.)
30
15
OIP
3
(dBm)
P
1dB
(dBm)
25
12
20
9
T
LEAD
=+25ºC
15
0
0.5
1
T
LEAD
=+25ºC
6
3
F req uency (G H z )
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Noise Figure vs. Frequency
5
4
I
D
= 35 mA (Typ.)
Noise Figure (dB)
3
2
1
0
0
0.5
1
T
LEAD
=+25ºC
Frequency (GHz)
1.5
2
2.5
3
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DS130729
SGA3586Z
Typical RF Performance Over Lead Temperature --
Bias: I
D
= 35 mA (Typ.) at T
LEAD
= +25
ºC
|
S
|
vs. Frequency
32
24
S
21
(dB)
16
8
0
0
1
2
3
4
Frequency (GHz)
-40°C
+25°C
+85°C
21
0
-10
S
21
(dB)
-20
-30
-40
|
S
|
vs. Frequency
11
-40°C
+25°C
+85°C
5
6
0
1
2
3
4
Frequency (GHz)
5
6
-10
-15
S
21
(dB)
-20
-25
-30
0
1
|
S
|
vs. Frequency
12
0
-10
S
21
(dB)
-20
-30
-40
0
1
|
S
|
vs. Frequency
22
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
2
3
4
Frequency (GHz)
5
6
2
3
4
Frequency (GHz)
5
6
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA3586Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
Suggested Pad Layout
86 PCB Pad Layout
Dimensions in inches [millimeters]
Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
RF
IN
RF
OUT
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
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DS130729
SGA3586Z
Application Schematic
Application Circuit Element Values
R
BIAS
V
S
1 uF
1000
pF
I
D
Reference
Designator
C
B
Frequency (Mhz)
100
1000 pF
100 pF
470 nH
500
850
1950
68 pF
22 pF
22 nH
2400
56 pF
22 pF
18 nH
3500
39 pF
15 pF
15 nH
220 pF 100 pF
100 pF
68 nH
68 pF
33 nH
C
D
R
LDC
Bias
Inductor
C
D
L
C
L
C
4
RF in
C
B
1
SGA3586Z
Recommended Bias Resistance for I
D
= 35 mA
Supply Voltage (V
S
)
(Volts)
<
5
N/R
5
50
6
79
7
107
8
136
9
164
1
0
3
V
D
C
B
RF out
Bias Resistance*
(Ohms)
193
2
* Bias Resistance = R
BIAS
+ R
LDC
= ( V
S
-V
D
) / I
D
Select
R
BIAS
so that
R
BIAS
+
R
LDC
~ the recommended bias resistance.
Use 1% or 5 % tolerance resisistors or parallel combinations to attain the
recommended bias resistance +/- 3%.
R
BIAS
provides current stability over
temperature.
* N/R=Not Recommended.
Contact Sirenza technical support for
guidance when available supply voltage is less than 5 Volts.
Evaluation Board Layout
V
S
R
B IA S
1 uF
1000 pF
C
D
L
C
A35
C
B
C
B
DS130729
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
嵌入式系统
