Si1553DL
Vishay Siliconix
Complementary 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.385 @ V
GS
= 4.5 V
0.630 @ V
GS
= 2.5 V
0.995 @ V
GS
= -4.5 V
I
D
(A)
"0.70
"0.54
"0.44
"0.32
P-Channel
-20
1.800 @ V
GS
= -2.5 V
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
RA
G
1
2
5
G
2
XX
YY
Lot Traceability
and Date Code
Part # Code
D
2
3
4
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 85_C
I
D
I
DM
I
S
0.25
0.30
0.16
0.23
0.27
0.14
-55 to 150
P-Channel
5 secs
Steady State
-20
"12
V
"0.44
"0.31
"1.0
-0.25
0.30
0.16
-0.23
0.27
0.14
W
_C
"0.41
"0.30
A
Symbol
V
DS
V
GS
5 secs
Steady State
20
Unit
"0.70
"0.50
"0.66
"0.48
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71078
S-21374—Rev. D, 12-Aug-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
C/W
2-1
Si1553DL
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= -250
mA
V
DS
= 0 V, V
GS
=
"12
V
"
V
DS
= 16 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85_C
On-State Drain Current
a
V
DS
w
5 V, V
GS
= 4.5 V
I
D(on)
V
DS
p
-5 V, V
GS
= -4.5 V
V
GS
= 4.5 V, I
D
= 0.66 A
Drain-Source On-State Resistance
a
V
GS
= -4.5 V, I
D
= -0.41 A
r
DS(on)
V
GS
= 2.5 V, I
D
= 0.40 A
V
GS
= -2.5 V, I
D
= -0.25 A
Forward Transconductance
a
V
DS
= 10 V, I
D
= 0.66 A
g
fs
V
DS
= -10 V, I
D
= -0.41 A
I
S
= 0.23 A, V
GS
= 0 V
V
SD
I
S
= -0.23 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
-1.0
0.320
0.850
0.560
1.4
1.5
0.8
0.8
-0.8
1.2
-1.2
V
S
0.385
0.995
0.630
1.800
W
A
0.6
V
-0.6
"100
"100
1
-1
5
-5
mA
m
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.66 A
Gate-Source Charge
Q
gs
P-Channel
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -0.41 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
V
DD
= 10 V, R
L
= 20
W
I
D
^
0.5 A, V
GEN
= 4.5 V, R
G
= 6
W
P-Channel
V
DD
= -10 V, R
L
= 20
W
I
D
^
-0.5 A, V
GEN
= -4.5 V, R
G
= 6
W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse Recovery Time
t
f
I
F
= 0.23 A, di/dt = 100 A/ms
t
rr
I
F
= -0.23 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
0.8
1.2
0.06
nC
0.45
0.30
0.25
10
7.5
16
20
10
8.5
10
12
20
25
20
15
30
40
20
17
20
24
40
40
ns
1.2
1.8
Gate-Drain Charge
Q
gd
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2-2
Document Number: 71078
S-21374—Rev. D, 12-Aug-02
Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
V
GS
= 5 thru 2.5 V
0.8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2V
0.6
0.8
1.0
N−CHANNEL
Transfer Characteristics
0.6
0.4
0.4
T
C
= 125_C
0.2
25_C
-55
_C
0.0
0.0
0.2
1.5 V
1V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0
r
DS(on)
- On-Resistance (
W
)
100
Capacitance
C - Capacitance (pF)
0.8
80
C
iss
60
0.6
V
GS
= 2.5 V
0.4
V
GS
= 4.5 V
40
C
oss
20
C
rss
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 0.66 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 0.66 A
1.4
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
0.4
0.6
0.8
1.2
2
1.0
1
0.8
0
0.0
0.2
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 71078
S-21374—Rev. D, 12-Aug-02
www.vishay.com
2-3
Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1
1.0
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
0.8
I
D
= 0.66 A
I
S
- Source Current (A)
0.6
T
J
= 150_C
0.4
T
J
= 25_C
0.2
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.2
5
Single Pulse Power
0.1
V
GS(th)
Variance (V)
I
D
= 250
mA
-0.0
Power (W)
4
3
-0.1
2
-0.2
1
-0.3
-0.4
-50
-25
0
25
50
75
100
125
150
0
10
- 3
10
- 2
10
- 1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
=400_C/W
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
2-4
Document Number: 71078
S-21374—Rev. D, 12-Aug-02
Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
N−CHANNEL
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
V
GS
= 5 thru 3 V
0.8
I
D
- Drain Current (A)
2.5 V
I
D
- Drain Current (A)
0.8
1.0
P−CHANNEL
Transfer Characteristics
T
C
= -55_C
25_C
0.6
0.6
125_C
0.4
0.4
2V
0.2
1V
0.0
0.0
1.5 V
0.2
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
3.0
r
DS(on)
- On-Resistance (
W
)
100
Capacitance
2.5
C - Capacitance (pF)
80
C
iss
2.0
V
GS
= 2.5 V
1.5
V
GS
= 3.6 V
1.0
V
GS
= 4.5 V
0.5
60
40
C
oss
20
C
rss
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71078
S-21374—Rev. D, 12-Aug-02
www.vishay.com
2-5
