Si2304DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.117 @ V
GS
= 10 V
0.190 @ V
GS
= 4.5 V
I
D
(A)
2.5
2.0
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2304DS (A4)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
2.5
2.0
Unit
V
A
10
1.25
1.25
W
0.80
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Ambient
c
Notes
a. Surface Mounted on FR4 Board, t
v
5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
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Document Number: 70756
S-63633—Rev. D, 01-Nov-99
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R
thJA
166
Symbol
Limit
100
Unit
_C/W
1
Si2304DS
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(
BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 30 V, V
GS
= 1.0 V, T
J
=25_C
On-State Drain Current
a
I
D(on)
V
DS
w
4.5 V, V
GS
= 10 V
V
DS
w
4.5 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 2.5 A
r
DS(on)
V
GS
= 4.5 V, I
D
= 2.0 A
Forward Transconductance
a
Diode Forward Voltage
g
fs
V
SD
V
DS
= 4.5 V, I
D
= 2.5 A
I
S
= 1.25 A, V
GS
= 0 V
0.142
4.6
0.77
1.2
0.190
S
V
6
A
4
0.092
0.117
W
30
V
1.5
"100
0.5
10
1
mA
A
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source On-Resistance
a
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gt
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 15 V V
GS
= 0 V, f = 1 MHz
V,
V
MH
V
DS
= 15 V V
GS
= 10 V I
D
= 2.5 A
V,
V,
25
V
DS
= 15 V, V
GS
= 5 V, I
D
= 2.5 A
2.4
4.5
0.8
1.0
240
110
17
pF
F
4
10
nC
C
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 15
W
V,
I
D
^
1 A, V
GEN
= 10 V R
G
= 6
W
A
V,
8
12
17
8
20
30
ns
35
20
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Document Number: 70756
S-63633—Rev. D, 01-Nov-99
Si2304DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Output Characteristics
10
Transfer Characteristics
V
GS
= 10 V - 5 V
8
I D – Drain Current (A)
I D – Drain Current (A)
8
6
4V
6
4
4
T
C
= 125_C
2
25_C
–55_C
2
0V
>
0
2
4
6
8
3V
0
10
0
0
V
DS
– Drain-to-Source Voltage (V)
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
5
On-Resistance vs. Drain Current
0.30
500
Capacitance
r DS(on)– On-Resistance (
W
)
0.24
V
GS
= 4.5 V
0.18
C – Capacitance (pF)
400
300
C
iss
200
C
oss
100
C
rss
0.12
V
GS
= 10 V
0.06
0
0
2
4
6
8
10
0
0
6
12
18
24
30
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 2.5 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
r DS(on)– On-Resistance (
W
)
(Normalized)
0
1
2
3
4
5
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
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Si2304DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.6
On-Resistance vs. Gate-to-Source Voltage
0.5
r DS(on)– On-Resistance (
W
)
I S – Source Current (A)
0.4
0.3
I
D
= 2.5 A
T
J
= 150_C
T
J
= 25_C
0.2
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.3
0.2
0.1
V GS(th) Variance (V)
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–50
0
0.01
2
I
D
= 250
mA
Power (W)
8
10
Single Pulse Power
6
T
C
= 25_C
Single Pulse
4
–25
0
25
50
75
100
125
150
0.10
1.00
Time (sec)
10.00
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70756
S-63633—Rev. D, 01-Nov-99
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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