Si7483DP
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
--30
30
FEATURES
I
D
(A)
--24
--17
r
DS(on)
(Ω)
0.005 @ V
GS
= --10 V
0.0095 @ V
GS
= --4.5 V
D
TrenchFETr Power MOSFETS
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D
Battery and Load Switching
-- Notebook Computers
-- Notebook Battery Packs
PowerPAKt SO-8
S
6.15 mm
S
1
2
S
3
S
5.15 mm
G
4
G
D
8
7
D
6
D
5
D
D
Bottom View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
--30
Unit
V
20
--24
--19
--60
--4.5
5.4
3.4
--55 to 150
--1.6
1.9
1.2
W
_C
--14
--11
A
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
t
≤
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
C/
1
Si7483DP
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= --250
mA
V
DS
= 0 V, V
GS
=
20
V
V
DS
= --24 V, V
GS
= 0 V
V
DS
= --24 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= --5 V, V
GS
= --10 V
V
GS
= --10 V, I
D
= --24 A
V
GS
= --4.5 V, I
D
= --17 A
V
DS
= --15 V, I
D
= --24 A
I
S
= --2.9 A, V
GS
= 0 V
--30
0.0041
0.0077
70
--0.75
--1.1
0.005
0.0095
--1.0
--3.0
100
--1
--10
V
nA
mA
A
Ω
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
t
rr
I
F
= --2.9 A, di/dt = 100 A/ms
V
DD
= --15 V, R
L
= 15
Ω
I
D
≅
--1 A, V
GEN
= --10 V, R
G
= 6
Ω
V
DS
= --15 V, V
GS
= --10 V, I
D
= --24 A
120
18.3
33.2
25
40
220
125
4
87
135
40
65
350
200
Ω
ns
ns
180
nC
Notes
a. Pulse test; pulse width
≤
300
ms,
duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
50
40
30
20
10
Output Characteristics
V
GS
= 10 thru 4 V
60
50
40
30
20
10
3V
0
0.0
Transfer Characteristics
I
D
-- Drain Current (A)
I
D
-- Drain Current (A)
T
C
= 125_C
25_C
--55_C
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
-- Drain-to-Source Voltage (V)
www.vishay.com
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
2
Si7483DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
Vishay Siliconix
On-Resistance vs. Drain Current
10000
Capacitance
r
DS(on)
-- On-Resistance (
Ω
)
0.008
V
GS
= 4.5 V
C -- Capacitance (pF)
8000
C
iss
0.006
V
GS
= 10 V
0.004
6000
4000
0.002
2000
C
rss
C
oss
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
-- Drain Current (A)
V
DS
-- Drain-to-Source Voltage (V)
10
V
GS
-- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 24 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 24 A
6
r
DS(on)
-- On-Resistance (
Ω)
(Normalized)
40
60
80
100
120
8
1.4
1.2
4
1.0
2
0.8
0
0
20
Q
g
-- Total Gate Charge (nC)
0.6
--50
--25
0
25
50
75
100
125
150
T
J
-- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.020
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
T
J
= 25_C
r
DS(on)
-- On-Resistance (
Ω
)
0.016
I
S
-- Source Current (A)
0.012
I
D
= 24 A
0.008
0.004
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-- Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
3
Si7483DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
0.6
V
GS(th)
Variance (V)
0.4
0.2
0.0
--0.2
--0.4
--50
40
I
D
= 250
mA
Power (W)
120
200
Single Pulse Power
160
80
--25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
-- Temperature (_C)
100
Limited by
r
DS(on)
10
I
D
-- Drain Current (A)
Safe Operating Area
1 ms
10 ms
100 ms
1s
0.1
T
C
= 25_C
Single Pulse
10 s
dc
1
0.01
0.1
1
10
100
V
DS
-- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
--4
10
--3
10
--2
10
--1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 50_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
-
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
Si7483DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10
--4
10
--3
10
--2
10
--1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71940
S-21441—Rev. A, 19-Aug-02
www.vishay.com
5
