SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压
20 V
最大漏极电流 (Abs) (ID)
8 A
最大漏极电流 (ID)
8.8 A
最大漏源导通电阻
0.022 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-XDSO-C6
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
6
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
21.9 W
最大脉冲漏极电流 (IDM)
30 A
认证状态
Not Qualified
表面贴装
YES
端子面层
MATTE TIN
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
Si7980DP
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
Channel-1
Channel-2
20
20
R
DS(on)
()
0.022 at V
GS
= 10 V
0.025 at V
GS
= 4.5 V
0.015 at V
GS
= 10 V
0.019 at V
GS
= 4.5 V
I
D
(A)
a, f
8
8
8
8
Q
g
(Typ.)
8
17
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
20
V
SD
(V)
Diode Forward Voltage
0.43 V at 1 A
I
F
(A)
a
4
APPLICATIONS
• Synchronous Buck Converter
- Game Machines
- Notebook Computers
D
1
PowerPAK SO-8
/D
2
S
1
6.15 mm
1
2
5.15 mm
G
1
S
2
G
1
3
4
G
2
N-Channel 1
MOSFET
D
1
S
1
/D
2
8
7
D
1
S
1
/D
2
6
5
S
1
/D
2
Schottky Diode
G
2
Bottom View
N-Channel 2
MOSFET
S
2
Ordering Information:
Si7980DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
P
D
T
J
, T
stg
Channel-1
20
± 16
8
f
8
f
8.8
b, c
7.1
b, c
30
8
f
2.8
b, c
30
15
11.2
19.8
12.6
3.1
b, c
2
b, c
- 55 to 150
260
Channel-2
20
± 16
8
f
8
f
11
b, c
9
b, c
30
8
f
2.8
b, c
30
15
11.2
21.9
14
3.4
b, c
2.2
b, c
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
°C
Soldering Recommendations (Peak Temperature)
d, e
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Package limited.
Document Number: 68391
S13-0631-Rev. D, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
Operating Junction and Storage Temperature Range
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7980DP
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a, b
Channel-2
Typ.
30
4.5
Max.
36
5.7
Unit
°C/W
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typ.
32
5
Max.
40
6.3
Maximum Junction-to-Case (Drain)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 20 V, V
GS
= 0 V, T
J
= 100 °C
On-State Drain Current
d
I
D(on)
V
DS
=5 V, V
GS
= 10 V
V
DS
=5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
Drain-Source On-State Resistance
d
R
DS(on)
V
GS
= 10 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= 4.5 V, I
D
= 4 A
Forward Transconductance
d
Dynamic
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Ch-1
Channel-1
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1010
1370
220
320
100
120
pF
g
fs
V
DS
= 15 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 5 A
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
10
10
0.018
0.012
0.020
0.015
40
47
0.022
0.015
0.025
0.019
S
3
0.05
1
1.4
20
20
22
-5
2.5
2.8
100
100
0.001
0.50
0.025
15
A
mA
V
mV/°C
V
nA
Symbol
Test Conditions
Min.
Typ.
c
Max.
Unit
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 88 °C/W (channel-1) and 83 °C/W (channel-2).
c. Guaranteed by design, not subject to production testing.
d. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 68391
S13-0631-Rev. D, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7980DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Symbol
Test Conditions
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A
Ch-1
Ch-2
Ch-1
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
f = 1 MHz
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 2 A
I
S
= 1 A
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
a
17.5
22.5
8
10.3
2.5
3.4
2.1
2.6
Max.
27
34
12
16
Unit
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
0.2
0.2
1.1
1.3
9
13
16
16
20
24
9
8
15
18
18
18
20
25
12
10
2.2
2.6
18
25
30
30
35
45
18
16
30
35
35
35
40
45
24
20
8
8
30
30
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.73
0.37
16
20
8
10
8
9
8
11
1.1
0.43
32
40
16
20
V
ns
nC
ns
Note:
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68391
S13-0631-Rev. D, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7980DP
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
5
V
GS
= 10 thru 4
V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
18
3
T
C
= 125 °C
V
GS
= 3
V
12
2
6
1
T
C
= 25 °C
T
C
= - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-SourceVoltage (V)
Output Characteristics
0.026
1300
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.024
V
GS
= 4.5
V
0.022
C - Capacitance (pF)
1040
C
iss
780
0.020
V
GS
= 10
V
520
C
oss
260
C
rss
0
4
8
12
16
20
0.018
0.016
0
6
12
18
24
30
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 5 A
V
GS
- Gate-to-SourceVoltage (V)
8
V
DS
= 10
V
6
V
DS
= 5
V
V
DS
= 15
V
4
R
DS(on)
- On-Resistance
(Normalized)
1.5
1.7
I
D
= 5 A
Capacitance
V
GS
=4.5
V
1.3
1.1
V
GS
=10V
0.9
2
0
0
4
8
12
16
20
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- TotalGateCharge(nC)
T
J
- Junction Temperature (°C)
Gate Charge
www.vishay.com
4
On-Resistance vs. Junction Temperature
Document Number: 68391
S13-0631-Rev. D, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7980DP
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.060
I
D
= 5 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- SourceCurrent (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.048
0.036
T
J
= 125 °C
0.024
0.1
0.01
0.012
T
J
= 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-DrainVoltage(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
60
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
48
0.0
Power (W)
36
- 0.2
I
D
= 5 mA
24
- 0.4
I
D
= 250 mA
- 0.6
12
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0 .0 0 1
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.1
1
BVDSS
Limited
10
100
0.1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68391
S13-0631-Rev. D, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
