• Portable Devices Such as Smart Phones, Tablet PCs
and Mobile Computing
- Load Switches
- Power Management
- DC/DC Converters
D
1
S
2
PowerPAK SC-70-6 Dual
1
G1
D1
D1
6
5
2.05 mm
G2
4
S2
2.05 mm
D2
S1
2
D2
3
Marking Code
EJX
XXX
G
1
Part # code
Lot Traceability
and Date Code
S
1
N-Channel
MOSFET
D
2
P-Channel MOSFET
G
2
Ordering Information:
SiA527DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
N-Channel
12
±8
4.5
a
4.5
a
4.5
a,b,c
4.5
a,b,c
20
4.5
a
1.6
b,c
7.8
5
1.9
b,c
1.2
b,c
- 4.5
a
- 4.5
a
- 4.5
a,b,c
- 4.4
b,c
- 15
- 4.5
a
- 1.6
b,c
7.8
5
1.9
b,c
1.2
b,c
- 55 to 150
260
P-Channel
- 12
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 100 µs)
Source Drain Current Diode Current
A
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d,e
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Typ.
Max.
Typ.
Max.
Parameter
Symbol
Unit
b,f
R
thJA
Maximum Junction-to-Ambient
t
5s
52
65
52
65
°C/W
R
thJC
Maximum Junction-to-Case (Drain)
Steady State
12.5
16
12.5
16
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
For technical questions, contact::
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA527DJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 12 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 4.5 V
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= - 4.5 V, I
D
= - 4.3 A
V
GS
= 2.5 V, I
D
= 4.6 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 3.6 A
V
GS
= 1.8 V, I
D
= 4.1 A
V
GS
= - 1.8 V, I
D
= - 1.5 A
V
GS
= 1.5 V, I
D
= 2 A
V
GS
= - 1.5 V, I
D
= - 1 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 6 V, V
GS
= 8 V, I
D
= 6.5 A
Total Gate Charge
Q
g
V
DS
= - 6 V, V
GS
= - 8 V, I
D
= - 5.6 A
N-Channel
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 6.5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 5.6 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 6 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.7
1.1
500
1500
160
260
100
250
9.7
17
5.6
10.5
0.72
2.3
0.74
2.5
3.5
5.5
7
11
15
26
8.5
16
nC
pF
g
fs
V
DS
= 6 V, I
D
= 5 A
V
DS
= - 6 V, I
D
= - 4.6 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
15
- 10
0.024
0.033
0.028
0.049
0.032
0.070
0.042
0.095
21
12
0.029
0.041
0.034
0.060
0.044
0.110
0.065
0.174
S
0.4
- 0.4
12
- 12
12
- 3.6
- 2.5
2.4
1
-1
± 100
± 100
1
-1
10
- 10
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
For technical questions, contact::
pmostechsupport@vishay.com
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA527DJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 5.2 A, dI//dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 4.5 A, dI/dt = - 100 A/µs, T
J
= 25 °C
I
S
= 5.2 A, V
GS
= 0 V
I
S
= - 4.5 A, V
GS
= 0 V
T
C
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.85
- 0.87
20
30
5
15
8
15
12
15
ns
4.5
- 4.5
20
- 15
1.2
- 1.2
40
60
10
30
V
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Ch
N-Channel
V
DD
= 6 V, R
L
= 1.2
I
D
5.2 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= - 6 V, R
L
= 1.3
I
D
- 4.5 A, V
GEN
= - 4.5 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 6 V, R
L
= 1.2
I
D
5.2 A, V
GEN
= 8 V, R
g
= 1
P-Channel
V
DD
= - 6 V, R
L
= 1.3
I
D
- 4.5 A, V
GEN
= - 8 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
22
10
22
22
32
10
15
5
10
10
10
18
30
10
12
15
35
15
35
30
50
15
25
10
15
15
15
30
40
15
20
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
For technical questions, contact::
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA527DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
5
V
GS
= 5
V
thru 2
V
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
3
10
V
GS
= 1.5
V
2
T
C
= 25 °C
1
T
C
= 125 °C
5
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.3
0.6
0.9
T
C
= - 55 °C
1.2
1.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
Transfer Characteristics
800
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS
= 1.8
V
C - Capacitance (pF)
V
GS
= 1.5
V
0.06
600
C
iss
400
C
oss
200
0.04
V
GS
= 2.5
V
0.02
V
GS
= 4.5
V
C
rss
0
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
3
6
9
12
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
8
R
DS(on)
- On-Resistance (Normalized)
1.6
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
I
D
= 6.5 A
6
1.5
1.4
1.3
1.2
1.1
V
GS
= 1.5
V;
I
D
= 2 A
1.0
0.9
0.8
0.7
- 50
V
GS
= 4.5
V,
2.5
V,
1.8
V;
I
D
= 5 A
V
DS
= 3
V
4
V
DS
= 6
V
2
V
DS
= 9.6
V
0
0
4
8
12
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
For technical questions, contact::
pmostechsupport@vishay.com
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA527DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.08
0.07
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150 °C
10
0.06
0.05
0.04
0.03
I
D
= 2 A; T
J
= 25 °C
0.02
0.01
I
D
= 5 A;
T
J
= 25 °C
I
D
= 2 A; T
J
= 125 °C
I
D
= 5 A; T
J
= 125 °C
T
J
= 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
20
On-Resistance vs. Gate-to-Source Voltage
0.7
15
0.6
V
GS(th)
(V)
I
D
= 250
µA
0.5
Power (W)
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Pulse (s)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
100
µs
1 ms
10 ms
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
100 ms, 1 s
10 s, DC
1
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
For technical questions, contact::
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
