DOCUMENT : SIG201612H-XXX
REVISION
: A4
: 1 OF 11
SPECIFICATION FOR APPROVAL
PAGE
SIG201612H-XXX Sealed Choke Coil
1. Features
Low profile：2.0mm
x
1.6mm
x
1.2mm
Low coil resistance with large currents.
High magnetic shield construction should actualize high resolution for EMC protection.
100% lead (Pb) free meet RoHS standard
2. Application
Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..
3. Type Designation
SIG
201612 H
–
(1)
(2)
(3)
Where
XXX
(4)
(1) Series No :
(2) Size :
201612 = 2.0mm
x
1.6mm
x
1.2mm
(3) Characteristic:
L : Low Resistance Type
H: High Current Type
(4) Inductance Value :
2R2 = 2.2μH
4. Outline Dimensions
W
L
Code
L
W
T
P
Dimensions (mm)
1.6
±
0.1
2.0
±
0.1
1.2 Max
0.6
±
0.2
P
P
T
Note : This graph is only regard to dimensions spec. For outer appearance, please refer to actual product.
DOCUMENT : SIG201612H-XXX
REVISION
: A4
: 2 OF 11
SPECIFICATION FOR APPROVAL
5. Recommend Land Pattern Dimensions
PAGE
The customer shall determine the land dimensions shown above after confirming and safety.
B
A
A
C
1.7
0.6
2.3
Unit : mm
B
C
6. Specifications
Part Number
L0
Inductance
(
μH
)
@ (0A)
0.47
0.5
1.0
1.5
1.8
2.0
2.2
3.3
4.7
6.8
8.2
10.0
15.0
22.0
R
dc
( mΩ)
Typical
40
48
76
124
138
140
154
213
280
399
481
528
1.455
1,610
Maximum
45
58
92
149
166
168
185
256
336
479
577
634
1,746
1,932
Heat Rating Current
DC Amps. Idc ( A )
Typical
2.35
2.20
1.70
1.44
1.36
1.35
1.29
1.10
0.96
0.80
0.73
0.70
0.46
0.35
Maximum
2.11
2.07
1.44
1.29
1.22
1.21
1.16
0.99
0.86
0.72
0.65
0.63
0.41
0.31
Saturation Current
DC Amps. Isat ( A )
Typical
2.90
2.50
1.77
1.75
1.50
1.37
1.26
1.10
0.90
0.73
0.71
0.63
0.54
0.42
Maximum
2.64
2.25
1.59
1.57
1.35
1.23
1.13
0.99
0.81
0.65
0.63
0.56
0.48
0.37
SIG201612H-R47
SIG201612H-R50
SIG201612H-1R0
SIG201612H-1R5
SIG201612H-1R8
SIG201612H-2R0
SIG201612H-2R2
SIG201612H-3R3
SIG201612H-4R7
SIG201612H-6R8
SIG201612H-8R2
SIG201612H-100
SIG201612H-150
SIG201612H-220
*
：If
you require another part number please contact with us.
**：Inductance Tolerance
±
20%
Note 1.： All test data is referenced to 25℃ ambient.
Note 2.： Idc : DC current (A) that will cause an approximate
△T
of 40℃
Note 3.： Isat : DC current (A) that will cause Lo to drop approximately 30%
Note 4.： Operating Temperature Range -55℃ to + 125℃
Note 5.： The part temperature (ambient + temp rise ) should not exceed 125℃ under worse case
operating conditions. Circuit design , component placement, PWB trace size and thickness,
airflow and other cooling provision all affect the part temperature. Part temperature should be
verified in the end application.
Note 6.：
The rated current as listed is either the saturation current or the heating current
depending on which value is lower.
DOCUMENT : SIG201612H-XXX
REVISION
: A4
: 3 OF 11
SPECIFICATION FOR APPROVAL
6-1 Current Characteristic
0.6
INDUCTANCE(μH)
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.3
0.6
0.9
1.2 1.5 1.8 2.1
DC BIAS(Amps)
2.4
2.7
3.0
3.3
INDUCTANCE(μH)
TEMP RISE (℃)
PAGE
SIG201612H-R47
100
INDUCTANCE(μH)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.4
0.8
1.2
INDUCTANCE(μH)
TEMP RISE (
℃
)
SIG201612H-R50
100
80
60
40
20
0
TEMP RISE(℃ )
TEMP RISE(℃ )
80
60
40
20
0
TEMP RISE(
℃
)
1.6
2.0
2.4
DC BIAS(Amps)
2.8
3.2
3.6
1.2
INDUCTANCE(μH)
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.3
0.6
0.9
SIG201612H-1R0
100
80
TEMP RISE(
℃
)
60
1.8
INDUCTANCE(μH)
1.5
1.2
0.9
0.6
0.3
0.0
INDUCTANCE(μH)
TEMP RISE (℃)
SIG201612H-1R5
100
80
60
40
20
0
TEMP RISE(
℃
)
TEMP RISE(
℃
)
INDUCTANCE(μH)
TEMP RISE (℃)
40
20
0
1.2
1.5
1.8
DC BIAS(Amps)
2.1
2.4
2.7
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
DC BIAS(Amps)
2.5
INDUCTANCE(μH)
2.0
1.5
1.0
0.5
0.0
0.0
0.2
0.4
0.6
0.8
INDUCTANCE(μH)
TEMP RISE (℃)
SIG201612H-1R8
100
INDUCTANCE(μH)
80
TEMP RISE(
℃
)
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.2
0.4
0.6
0.8
INDUCTANCE(μH)
TEMP RISE (℃)
SIG201612H-2R0
100
80
60
40
20
0
1.0
1.2
1.4
1.6
1.8
2.0
2.2
1.0
1.2
1.4
1.6
1.8
2.0
DC BIAS(Amps)
3.0
INDUCTANCE(μH)
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
DC BIAS(Amps)
INDUCTANCE(μH)
TEMP RISE (℃)
DC BIAS(Amps)
90
3.6
SIG201612H-2R2
SIG201612H-3R3
100
80
75
60
45
30
15
0
INDUCTANCE(μH)
TEMP RISE(
℃
)
3.0
2.4
1.8
1.2
0.6
0.0
0.0
0.2
0.4
0.6
0.8
1.0
DC BIAS(Amps)
1.2
1.4
1.6
INDUCTANCE(μH)
TEMP RISE (
℃
)
60
40
20
0
DOCUMENT : SIG201612H-XXX
REVISION
: A4
: 4 OF 11
SIG201612H-6R8
100
80
60
4.0
INDUCTANCE(μH)
SPECIFICATION FOR APPROVAL
6.0
INDUCTANCE(μH)
5.0
4.0
3.0
2.0
1.0
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
DC BIAS(Amps)
INDUCTANCE(μH)
TEMP RISE (℃)
PAGE
SIG201612H-4R7
100
INDUCTANCE(μH)
80
TEMP RISE(
℃
)
60
40
20
0
8.0
6.0
40
20
0
2.0
0.0
0.0
0.1
TEMP RISE (℃)
0.2
0.3
0.4
0.5 0.6 0.7 0.8
DC BIAS(Amps)
0.9
1.0
1.1
1.2
10.0
INDUCTANCE(μH)
8.0
6.0
4.0
2.0
0.0
0.0
0.1
0.2
0.3
INDUCTANCE(μH)
TEMP RISE (℃)
SIG201612H-8R2
100
80
TEMP RISE(
℃
)
60
40
20
0
INDUCTANCE(μH)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0.0
0.1
0.2
0.3
0.4
0.5
INDUCTANCE(μH)
TEMP RISE (℃)
SIG201612H-100
100
80
60
40
20
0
TEMP RISE(
℃
)
TEMP RISE(
℃
)
0.4 0.5 0.6 0.7
DC BIAS(Amps)
0.8
0.9
1.0
1.1
0.6
0.7
0.8
0.9
1.0
DC BIAS(Amps)
18.0
INDUCTANCE(μH)
15.0
12.0
9.0
6.0
3.0
0.0
0.00
0.10
0.20
INDUCTANCE(μH)
TEMP.RISE(℃)
SIG201612H-150
100
INDUCTANCE(μH)
80
TEMP RISE(
℃
)
60
40
20
0
27.0
22.5
18.0
13.5
9.0
4.5
0.0
SIG201612H-220
100
80
INDUCTANCE(μH)
TEMP RISE (℃)
60
40
20
0
0.30
0.40
DC BIAS(Amps)
0.50
0.60
0.00 0.06 0.12 0.18 0.24 0.30 0.36 0.42 0.48 0.54 0.60
DC BIAS(Amps)
TEMP RISE(
℃
)
