型号
- 型号
- 关键词
Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-200AC,
厂商名称：SEMIKRON
厂商官网：http://www.semikron.com
下载文档| 型号 | SKT513F09DT | SKT593F10DS | SKT593F11DS | SKT593F08DS | SKT593F09DS | SKT513F14DV | SKT513F11DT |
|---|---|---|---|---|---|---|---|
| 描述 | Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-200AC, | Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AC, | Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element, TO-200AC, | Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC | Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-200AC | Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AC | Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element, TO-200AC, |
| 包装说明 | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 | DISK BUTTON, O-CEDB-N2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | FAST | FAST | FAST | FAST | FAST | FAST | FAST |
| 标称电路换相断开时间 | 20 µs | 15 µs | 15 µs | 15 µs | 15 µs | 30 µs | 20 µs |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 关态电压最小值的临界上升速率 | 500 V/us | 500 V/us | 500 V/us | 500 V/us | 500 V/us | 500 V/us | 500 V/us |
| 最大直流栅极触发电流 | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA |
| 最大直流栅极触发电压 | 4 V | 4 V | 4 V | 4 V | 4 V | 4 V | 4 V |
| 最大维持电流 | 400 mA | 400 mA | 400 mA | 400 mA | 400 mA | 400 mA | 400 mA |
| JEDEC-95代码 | TO-200AC | TO-200AC | TO-200AC | TO-200AC | TO-200AC | TO-200AC | TO-200AC |
| JESD-30 代码 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 |
| 最大漏电流 | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA |
| 通态非重复峰值电流 | 11000 A | 13000 A | 13000 A | 13000 A | 13000 A | 11000 A | 11000 A |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 最大通态电流 | 510000 A | 590000 A | 590000 A | 590000 A | 590000 A | 510000 A | 510000 A |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大均方根通态电流 | 1300 A | 1500 A | 1500 A | 1500 A | 1500 A | 1300 A | 1300 A |
| 重复峰值关态漏电流最大值 | 100000 µA | 100000 µA | 100000 µA | 100000 µA | 100000 µA | 100000 µA | 100000 µA |
| 断态重复峰值电压 | 900 V | 1000 V | 1100 V | 800 V | 900 V | 1400 V | 1100 V |
| 重复峰值反向电压 | 900 V | 1000 V | 1100 V | 800 V | 900 V | 1400 V | 1100 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | END | END | END | END | END | END | END |
| 触发设备类型 | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
| Base Number Matches | - | 1 | 1 | 1 | 1 | - | - |
