SLA5054
Absolute maximum ratings
Symbol
N-channel
General purpose
(T
a
=25°C)
Unit
V
V
A
A
W
W
°C/W
°C/W
Vrms
°C
°C
3
FET-1
2
FET-1
5
6
FET-2
7
8
10
FET-2
9
12
FET-3
11
14
FET-3
13
External dimensions
A
sEquivalent
circuit diagram
•••
SLA
Ratings
FET1
FET2
FET3
V
DSS
150
V
GSS
+20, –10
I
D
±7
±5
±7
I
D(
pulse
)*
±15
±10
±15
5 (T
a
=25°C, with all circuits operating, without heatsink)
P
T
35 (T
c
=25°C, with all circuits operating, with infinite heatsink)
θ
j-a
25 (Junction-Air, T
a
=25°C, with all circuits operating)
θ
j-c
3.57 (Junction-Case, T
c
=25°C, with all circuits operating)
V
ISO
1000 (Between fin and lead pin, AC)
Tch
150
Tstg
–40 to +150
*PW≤100
µ
s, duty≤50%
1
Pin 4: NC
15
Electrical characteristics
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
R
DS(ON)
Ciss
Coss
Crss
td
(
on
)
t
r
td
(
off
)
t
f
V
SD
t
rr
FET1
Specification
Unit
Conditions
min typ max
150
V
I
D
=100
µ
A, V
GS
=0V
100 nA
V
GS
=20V
100
µ
A
V
DS
=150V, V
GS
=0V
1.0
2.0
V
V
DS
=10V, I
D
=250
µ
A
7
12
S
V
DS
=10V, I
D
=3.5A
80 105 mΩ
V
GS
=10V, I
D
=3.5A
85 115 mΩ
V
GS
=4V, I
D
=3.5A
1600
pF
V
DS
=10V
380
pF
f=1.0MHz
90
pF
V
GS
=0V
35
ns
I
D
=3.5A
70
ns
V
DD
70V
125
ns
R
L
=20Ω
90
ns
V
GS
=5V
1.0 1.5
V
I
SD
=7A, V
GS
=0V
320
ns
I
F
=±100mA
FET2
Specification
Unit
Conditions
min typ max
150
V
I
D
=100
µ
A, V
GS
=0V
100 nA
V
GS
=20V
100
µ
A
V
DS
=150V, V
GS
=0V
1.0
2.0
V
V
DS
=10V, I
D
=250
µ
A
3
5.5
S
V
DS
=10V, I
D
=2.5A
330 440 mΩ
V
GS
=10V, I
D
=2.5A
370 480 mΩ
V
GS
=4V, I
D
=2.5A
380
pF
V
DS
=10V
95
pF
f=1.0MHz
25
pF
V
GS
=0V
25
ns
I
D
=2.5A
50
ns
V
DD
70V
55
ns
R
L
=28Ω
40
ns
V
GS
=5V
1.1 1.5
V
I
SD
=5A, V
GS
=0V
180
ns
I
F
=±100mA
(T
a
=25°C)
FET3
Specification
Unit
Conditions
min typ max
150
V
I
D
=100
µ
A, V
GS
=0V
100 nA
V
GS
=20V
100
µ
A
V
DS
=150V, V
GS
=0V
1.0
2.0
V
V
DS
=10V, I
D
=250
µ
A
4
9
S
V
DS
=10V, I
D
=3.5A
150 200 mΩ
V
GS
=10V, I
D
=3.5A
170 230 mΩ
V
GS
=4V, I
D
=3.5A
870
pF
V
DS
=10V
320
pF
f=1.0MHz
210
pF
V
GS
=0V
25
ns
I
D
=3.5A
55
ns
V
DD
70V
80
ns
R
L
=20Ω
50
ns
V
GS
=5V
1.0 1.5
V
I
SD
=7A, V
GS
=0V
500
ns
I
F
=±100mA
Characteristic curves
I
D
-V
DS
Characteristics (Typical)
7
10V
4V
FET1
5
10V
FET2
7
10V
4V
FET3
6
4
5
2.6V
4V
6
5
2.8V
I
D
(A)
3
2.8V
I
D
(A)
4
I
D
(A)
4
3
2.6V
3
2.4V
2
2.6V
2
1
2
1
V
GS
=2.2V
2.4V
2.4V
1
V
GS
=2.2V
V
GS
=2.2V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V
DS
(V)
V
DS
(V)
V
DS
(V)
I
D
-V
GS
Characteristics (Typical)
7
FET1
(V
DS
=10V)
5
FET2
(V
DS
=10V)
7
6
4
FET3
(V
DS
=10V)
6
5
5
Tc=12
5
°C
25
°C
I
D
(A)
I
D
(A)
125
25
°
°
C
C
I
D
(A)
–40
°C
4
3
4
3
2
3
2
2
1
25
°
C
25
°
C
C
Tc=
0
0
1
2
3
4
0
0
1
2
3
4
0
0
1
2
3
4
V
GS
(V)
V
GS
(V)
V
GS
(V)
R
DS(ON)
-I
D
Characteristics (Typical)
100
FET1
500
4V
FET2
200
FET3
4V
80
V
GS
=10V
(ON)
(mΩ)
Tc=
1
–40
°
1
–40
°
V
GS
=10V
1
400
4V
150
60
(mΩ)
V
GS
=10V
300
(ON)
(ON)
(mΩ)
100
R
DS
R
DS
40
200
R
DS
20
50
100
0
0
1
2
3
4
5
6
7
0
I
D
(A)
0
1
2
3
4
5
0
0
1
2
3
4
C
5
6
7
I
D
(A)
I
D
(A)
SLA5054
Re
(
yfs
)
-I
D
Characteristics (Typical)
30
FET1
(V
DS
=10V)
10
FET2
(V
DS
=10V)
20
FET3
(V
DS
=10V)
10
Re (yfs) (S)
Re (yfs) (S)
12
Re (yfs) (S)
=
T
C
–4
0
°
10
C
C
5
°
5
°
C
40
=–
C
5
°
T
C
12
25°C
5
=–
T
C
°
C
40
C
5
°
12
5
25°C
25°C
1
1
0.5
0.3
0.05
1
0.5
0.3
0.05
0.5
0.3
0.05
0.1
0.5
1
5
7
0.1
0.5
1
5
0.1
0.5
1
5
7
I
D
(A)
I
D
(A)
I
D
(A)
R
DS(ON)
-T
C
Characteristics (Typical)
200
FET1
(I
D
=3.5A)
FET2
1.0
FET3
(I
D
=2.5A)
500
(I
D
=3.5A)
400
R
DS (ON)
(mΩ)
(mΩ)
4V
(Ω)
(ON)
(ON)
100
V
G
S
=
V
10
4V
300
4V
V
G
S
=
0.5
R
DS
R
DS
V
=
GS
10
V
10
V
200
100
0
–40
0
50
100
150
0
–40
0
50
100
150
0
–40
0
50
100
150
T
C
(°C)
T
C
(°C)
T
C
(°C)
Capacitance-V
DS
Characteristics (Typical)
5000
FET1
V
GS
=0V
f=1MHz
FET2
1000
V
GS
=0V
f=1MHz
FET3
5000
V
GS
=0V
f=1MHz
500
Capacitance (pF)
Capacitance (pF)
Capacitance (pF)
Ciss
Ciss
1000
1000
Ciss
500
100
Coss
500
50
Coss
100
Coss
Crss
100
Crss
Crss
50
10
50
40
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
V
DS
(V)
V
DS
(V)
V
DS
(V)
I
DR
-V
SD
Characteristics (Typical)
7
FET1
5
FET2
7
6
4
FET3
6
5
10V
5
I
DR
(A)
I
DR
(A)
4
3
2
4V
V
GS
=0V
I
DR
(A)
3
4
10
V
4V
2
10
3
2
V
4V
V
GS
=0V
V
GS
=0V
1
1
1
0
0
0
0.5
1.0
1.5
0
0.5
1.0
1.5
0
0
0.5
1.0
1.5
V
SD
(V)
V
SD
(V)
V
SD
(V)
Safe Operating Area (SOA)
20
10
5
I
D
(pulse) MAX
FET1
(T
C
=25°C)
10
1m
10
m
s
(1
s
0
µ
FET2
20
s
FET3
(T
C
=25°C)
20
10
s
(T
C
=25°C)
10
I
D
(pulse) MAX
10
5
I
D
(pulse) MAX
0
µ
R
DS (
on
)
LIMITED
sh
o
t)
I
D
(A)
I
D
(A)
1
0.5
t)
0.5
I
D
(A)
1
R
DS
(o
n)
LI
M
I
D
TE
10
0
µ
10
m
1m
s
(1
s
s
5
1m
10
m
s
(1
s
R
DS
(on) LIMITED
sh
sh
o
ot
)
0.5
0.1
0.05
1-circuit operation
0.1
0.05
1-circuit operation
0.1
0.05
1-circuit operation
0.01
0.5
1
5
10
50
100
200
V
DS
(V)
0.01
0.5
1
5
10
50
100
200
0.01
0.5
1
5
10
50
100
200
V
DS
(V)
V
DS
(V)
P
T
-T
a
Characteristics
40
35
30
25
20
15
10
Without Heatsink
With Silicone Grease
Natural Cooling
All Circuits Operating
W
ith
P
T
(W)
fin
In
ite
H
ts
ea
in
k
5
0
0
50
100
150
T
a
(°C)