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SM56BR3

Power Bipolar Transistor, 14A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:TT Electronics plc

厂商官网:http://www.ttelectronics.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
TT Electronics plc
包装说明
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
14 A
集电极-发射极最大电压
100 V
配置
SINGLE
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
LAB
MECHANICAL DATA
Dimensions in mm
SEME
SM56B
NPN
FAST SWITCHING
TRANSISTOR
FEATURES
• LOW SATURATION VOLTAGE
• ULTRA FAST TURN–ON AND TURN–OFF
SWITCHING (t
r
/ t
f
= 40ns)
APPLICATIONS
• High speed TO220 transistor suited for low
voltage applications.
• High frequency and high efficiency
converters, switching regulators and motor
controls.
TO220
Pin 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
• Ideally suited for 12V and 24V inverters.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
R
th
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Storage Temperature Range
Thermal Resistance Junction – Case
200V
100V
7V
14A
4A
85W
–55 to 175°C
175°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/94
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)*
V
(BR)EBO*
I
CER*
I
CBO*
I
EBO*
V
CE(sat)*
V
BE(sat)*
t
on
t
s
t
f
t
s
t
f
t
s
t
f
SEME
SM56B
Test Conditions
Min.
100
7
Typ.
Max.
Unit
V
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 200mA
Emitter – Base Breakdown Voltage
Collector Cut–Off Current
Collector – Base Cut–Off Current
Emitter Cut–Off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
I
E
= 1mA
I
B
= 0
R
BE
= 50
W
I
E
= 0
V
BE
= –1.5V
I
C
= 0
I
C
= 5A
I
C
= 10A
I
C
= 10A
V
CE
= 200V
T
C
= 125°C
V
CB
= 200V
T
C
= 125°C
V
EB
= 5V
I
B
= 500mA
I
B
= 1A
I
B
= 1A
I
C
= 12A
I
B1
= 1.2A
3
1
1
0.6
1.5
2
0.2
0.4
0.04
0.5
0.04
2
0.15
0.6
1
0.25
mA
mA
mA
V
V
SWITCHING CHARACTERISTICS (resistive load)
V
CC
= 50V
Turn–On Time
Storage Time
Fall Time
V
BE
= –6V
R
BB
= 2.5
W
m
S
SWITCHING CHARACTERISTICS (inductive load)
Storage Time
V
CC
= 50V
Fall Time
V
BE
= –5V
Storage Time
(T
j
= 125°C)
L
B
= 0.5
m
H
Fall Time
(T
j
= 125°C)
I
C
= 12A
I
B1
= 1.2A
m
S
* Pulse test t
p
= 300
m
s ,
d £
2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/94
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参数对比
与SM56BR3相近的元器件有:SM56B。描述及对比如下:
型号 SM56BR3 SM56B
描述 Power Bipolar Transistor, 14A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 14A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
是否Rohs认证 符合 不符合
厂商名称 TT Electronics plc TT Electronics plc
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 14 A 14 A
集电极-发射极最大电压 100 V 100 V
配置 SINGLE SINGLE
JEDEC-95代码 TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3
元件数量 1 1
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
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