SMBT3904...MMBT3904
NPN Silicon Switching Transistors
•
High DC current gain: 0.1 mA to 100 mA
•
Low collector-emitter saturation voltage
•
For SMBT3904S / SMBT3904U:
Two (galvanic) internal isolated transistors
with good matching in one package
•
Complementary types: SMBT3906... MMBT3906
•
SMBT3904S / U: For orientation in reel
see package information below
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
SMBT3904S/U
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07178
Type
SMBT3904/MMBT3904
SMBT3904S
SMBT3904U
1
Pb-containing
Marking
s1A
s1A
s1A
1=B
Pin Configuration
2=E
3=C
-
-
-
Package
SOT23
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
package may be available upon special request
1
2007-09-20
SMBT3904...MMBT3904
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
≤
69°C
T
S
≤
tbd°C
T
S
≤
115°C
T
S
≤
105°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
SMBT3904/MMBT3904
SMBT3904S
SMBT3904U
1
For
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
Value
40
60
6
200
330
250
250
330
150
-65 ... 150
Value
≤
245
≤
140
≤
135
Unit
V
mA
mW
T
j
T
stg
Symbol
R
thJS
°C
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-09-20
SMBT3904...MMBT3904
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
40
V
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
60
6
-
-
-
-
-
-
50
nA
-
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
DC current gain
1)
I
C
= 100 µA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
40
70
100
60
30
V
CEsat
-
-
-
-
-
-
-
300
-
-
V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
-
-
V
BEsat
-
-
-
-
0.2
0.3
0.85
0.95
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
1
Pulse
0.65
-
test: t < 300µs; D < 2%
3
2007-09-20
SMBT3904...MMBT3904
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Noise figure
I
C
= 100 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 1 kΩ
F
-
-
5
dB
t
f
-
-
50
t
stg
-
-
200
t
r
-
-
35
t
d
-
-
35
ns
C
eb
-
-
8
C
cb
-
-
3.5
pF
f
T
300
-
-
MHz
Symbol
min.
Values
typ.
max.
Unit
4
2007-09-20
SMBT3904...MMBT3904
Test circuits
Delay and rise time
+3.0 V
300 ns
D
= 2%
+10.9 V
0
10 k
Ω
-0.5 V
275
Ω
C
<4.0 pF
<1.0 ns
EHN00061
Storage and fall time
+3.0 V
t
1
10 <
t
1
< 500
µs
D
= 2%
+10.9 V
0
10 k
Ω
275
Ω
C
1N916
<4.0 pF
-9.1 V
<1.0 ns
EHN00062
5
2007-09-20
51单片机
