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SMF9V0A-GS18

ESD Suppressors / TVS Diodes 9.0 Volt 200 Watt 5%

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
DO-219AB
包装说明
R-PDSO-F2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
最小击穿电压
10 V
最大钳位电压
15.4 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-219AB
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
1000 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
9 V
表面贴装
YES
技术
AVALANCHE
端子面层
Matte Tin (Sn)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
40
文档预览
SMF5V0A to SMF51A
www.vishay.com
Vishay Semiconductors
Surface Mount ESD Protection Diodes
FEATURES
17249
1
2
20278
22623
MARKING
(example only)
Bar = cathode marking
YY = type code (see table below)
XX = date code
For surface mounted applications
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance with IEC 61000-4-2 (IEC 801-2)
Ideal for EFT protection of data lines in
accordance with IEC 61000-4-4 (IEC 801-4)
ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
Low incremental surge resistance, excellent clamping
capability
200 W peak pulse power capability with a 10/1000 μs
waveform, repetition rate (duty cycle): 0.01 %
Very fast response time
High temperature soldering guaranteed: 260 °C/10 s at
terminals
e3 - Sn
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
SMF5V0A-GSxx
GS08 = 3K per 7" reel (8 mm tape), 30K/box
GS18 = 10K per 13" reel (8 mm tape), 50K/box
Part number
PACKAGE DATA
DEVICE NAME
SMF5V0A
SMF6V5A
SMF7V0A
SMF7V5A
SMF8V0A
SMF8V5A
SMF9V0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
Rev. 2.6, 30-Nov-11
SMF
PACKAGE
TYPE CODE
NAME
AE
AK
AM
AP
AR
AT
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
15 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
WEIGHT
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
Document Number: 85811
1
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
This datasheet has been downloaded from
http://www.digchip.com
at this
page
XX
YY
SMF5V0A to SMF51A
www.vishay.com
PACKAGE DATA
DEVICE NAME
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
SMF
PACKAGE
TYPE CODE
NAME
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
15 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
WEIGHT
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak pulse current
Peak pulse power
Peak forward surge current
ESD immunity
Thermal resistance
Forward clamping voltage
Operating temperature
Storage temperature
TEST CONDITIONS
t
p
= 10/1000 μs waveform acc. IEC 61000-4-5
t
p
= 8/20 μs waveform acc. IEC 61000-4-5
t
p
= 10/1000 μs waveform acc. IEC 61000-4-5
8.3 ms single half sine-wave
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Mounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads (
40
μm thick)
I
F
= 12 A
Junction temperature
SYMBOL
I
PPM
P
PP
I
FSM
V
ESD
R
thJA
V
F
T
J
T
STG
VALUE
see “Electrical
Characteristics”
1000
200
20
± 30
± 30
180
3.5
- 55 to + 150
- 55 to + 150
UNIT
A
W
W
A
kV
kV
K/W
V
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
REVERSE
BREAKDOWN
VOLTAGE
at I
T
, t
p
5 ms
V
BR
MIN.
(V)
SMF5V0A
SMF6V0A
SMF6V5A
SMF7V0A
SMF7V5A
SMF8V0A
SMF8V5A
SMF9V0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
Rev. 2.6, 30-Nov-11
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20
REVERSE REVERSE
TEST
STAND-OFF CURRENT
CURRENT VOLTAGE
at V
RWM
I
T
(mA)
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
V
RWM
(V)
5
6
6.5
7
7.5
8
8.5
9
10
11
12
13
14
15
16
17
18
I
R
(μA)
400
400
250
100
50
25
10
5
2.5
2.5
2.5
1
1
1
1
1
1
MAXIMUM
REVERSE
PEAK PULSE CLAMPING CAPACITANCE PROTECTION
CURRENT
VOLTAGE
at V
R
= 0 V,
PATHS
t
p
= 10/1000 μs
at I
PPM
f = 1 MHz
I
PPM
(A)
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.5
11.8
11
10.1
9.3
8.6
8.2
7.7
7.2
5.8
V
C
(V)
9.2
10.3
11.2
12
12.9
13.6
14.4
15.4
17
18.2
19.9
21.5
23.2
24.4
26
27.6
29.2
C
D
TYP.
(pF)
1030
1010
850
750
730
670
660
620
570
460
440
420
370
350
340
310
305
N
channel
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
PART NUMBER
Document Number: 85811
2
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMF5V0A to SMF51A
www.vishay.com
Vishay Semiconductors
MAXIMUM
REVERSE
PEAK PULSE CLAMPING CAPACITANCE PROTECTION
CURRENT
VOLTAGE
at V
R
= 0 V,
PATHS
t
p
= 10/1000 μs
at I
PPM
f = 1 MHz
I
PPM
(A)
6.2
5.6
5.1
4.8
4.4
4.1
3.8
3.4
3.1
2.9
2.8
2.6
2.4
V
C
(V)
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
C
D
TYP.
(pF)
207
265
240
225
210
205
190
180
165
160
155
150
145
N
channel
1
1
1
1
1
1
1
1
1
1
1
1
1
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
REVERSE
BREAKDOWN
VOLTAGE
at I
T
, t
p
5 ms
V
BR
MIN.
(V)
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
44.4
47.8
50
53.3
56.7
REVERSE REVERSE
TEST
STAND-OFF CURRENT
CURRENT VOLTAGE
at V
RWM
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
V
RWM
(V)
20
22
24
26
28
30
33
36
40
43
45
48
51
I
R
(μA)
1
1
1
1
1
1
1
1
1
1
1
1
1
PART NUMBER
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
I
PPM
- Peak Pulse Current, % I
RSM
P
PP
- Peak Pulse Power (kW)
Non-repetitive pulse
waveform shown in fig. 3
T
A
= 25 °C
150
t
r
=10 µs
T
J
= 25 °C
pulse width (t
d
) is
defined as the point
where the peak current
decays to 50 % of I
PPM
100
Peak value
I
PPM
Half value I
PPM
I
PPM
2
1
50
10/100 s waveform
as defined by R.E.A.
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
17250
0
0
17252
t
d
1
2
t - Time (ms)
3
4
t
d
- Pulse Width (s)
Fig. 1 - Peak Pulse Power Rating
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage (%)
100
Fig. 3 - Pulse Waveform
75
50
25
0
0
25
50
75 100 125 150 175 200
17251
T
A
- Ambient Temperature
Fig. 2 - Pulse Derating Curve
Rev. 2.6, 30-Nov-11
Document Number: 85811
3
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMF5V0A to SMF51A
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SMF
Vishay Semiconductors
0.85 (0.033)
0.35 (0.014)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Rev. 2.6, 30-Nov-11
Document Number: 85811
4
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5
SMF5V0A to SMF51A
www.vishay.com
BLISTERTAPE DIMENSIONS
in millimeters (inches)
Vishay Semiconductors
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 2.6, 30-Nov-11
Document Number: 85811
5
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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