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SMMBF170LT1

500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, TO-236, CASE 318-08, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOT-23
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
制造商包装代码
CASE 318-08
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
60 V
最大漏极电流 (ID)
0.5 A
最大漏源导通电阻
5 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-236AB
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
MMBF170LT1
Power MOSFET
500 mA, 60 V
N-Channel SOT-23
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (t
p
50
ms)
Drain Current - Continuous
- Pulsed
Symbol
V
DSS
V
DGS
V
GS
V
GSM
I
D
I
DM
Value
60
60
±20
±40
0.5
0.8
Unit
Vdc
Vdc
Vdc
Vpk
Adc
http://onsemi.com
500 mA, 60 V
R
DS(on)
= 5
W
SOT-23
CASE 318
STYLE 21
N-Channel
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(Note 1.) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
T
J
, T
stg
556
-55 to
+150
mW
mW/°C
°C/W
°C
1
Max
Unit
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0

0.75

0.062 in.
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain
6Z MG
G
Gate 1
2 Source
6Z
= Specific Device Code
M
= Date Code
= Pb-Free Package
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
June, 2007 - Rev. 5
Publication Order Number:
MMBF170LT1/D
MMBF170LT1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 100
mA)
Gate-Body Leakage Current, Forward (V
GSF
= 15 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0 mA)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 200 mA)
On-State Drain Current (V
DS
= 25 Vdc, V
GS
= 0)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
(Note 1)
Turn-On Delay Time
Turn-Of f Delay Time
(V
DD
= 25 Vdc, I
D
= 500 mA, R
gen
= 50
W)
Figure 1
t
d(on)
t
d(off)
-
-
10
10
ns
C
iss
-
60
pF
V
GS(th)
r
DS(on)
I
D(off)
0.8
-
-
3.0
5.0
0.5
Vdc
W
mA
V
(BR)DSS
I
GSS
60
-
-
10
Vdc
nAdc
Symbol
Min
Max
Unit
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
ORDERING INFORMATION
Device
MMBF170LT1
MMBF170LT1G
MMBF170LT3
MMBF170LT3G
Package
SOT-23 (TO-236)
SOT-23 (TO-236)
(Pb-Free)
SOT-23 (TO-236)
SOT-23 (TO-236)
(Pb-Free)
Shipping
3,000 Tape & Reel
3,000 Tape & Reel
10,000 Tape & Reel
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
t
on
t
d(on)
125
W
PULSE
GENERATOR
50
W
V
in
40 pF
20 dB 50
W
ATTENUATOR
TO SAMPLING
SCOPE
50
W
INPUT
OUTPUT
INVERTED
V
out
INPUT
50%
50
W
1 MW
V
in
10%
PULSE WIDTH
t
r
90%
10%
90%
50%
t
d(off)
90%
t
off
t
f
V
out
(V
in
AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
http://onsemi.com
2
MMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0 3.0 4.0 5.0
6.0 7.0 8.0
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
7V
6V
5V
4V
3V
9.0
10
T
A
= 25°C
I D, DRAIN CURRENT (AMPS)
V
GS
= 10 V
9V
8V
1.0
V
DS
= 10 V
0.8
-55
°C
125°C
25°C
0.6
0.4
0.2
0
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 3. Ohmic Region
Figure 4. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
GS
= 10 V
I
D
= 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
DS
= V
GS
I
D
= 1.0 mA
Figure 5. Temperature versus Static
Drain-Source On-Resistance
Figure 6. Temperature versus Gate
Threshold Voltage
http://onsemi.com
3
MMBF170LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AN
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
E
HE
c
1
2
b
e
q
A
L
A1
L1
VIEW C
0.25
DIM
A
A1
b
c
D
E
e
L
L1
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
SOT-23
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
 Literature Distribution Center for ON Semiconductor
 P.O. Box 5163, Denver, Colorado 80217 USA
 Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
 Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
 Email: orderlit@onsemi.com
N. American Technical Support:
800-282-9855 Toll Free
 USA/Canada
Europe, Middle East and Africa Technical Support:
 Phone: 421 33 790 2910
Japan Customer Focus Center
 Phone: 81-3-5773-3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
MMBF170LT1/D
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参数对比
与SMMBF170LT1相近的元器件有:SMMBF170LT3。描述及对比如下:
型号 SMMBF170LT1 SMMBF170LT3
描述 500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, TO-236, CASE 318-08, 3 PIN 500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, TO-236, CASE 318-08, 3 PIN
是否Rohs认证 不符合 不符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 SOT-23 SOT-23
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3
制造商包装代码 CASE 318-08 CASE 318-08
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V 60 V
最大漏极电流 (ID) 0.5 A 0.5 A
最大漏源导通电阻 5 Ω 5 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-236AB TO-236AB
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e0 e0
元件数量 1 1
端子数量 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
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