Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
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2
MSD602−RT1G
TYPICAL CHARACTERISTICS
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.01
0.1
1
10
100
1000
0.2
0.1
T
A
= 150°C
1
10
100
1000
T
A
= 80°C
T
A
= −30°C
T
A
= −55°C
I
C
/I
B
= 10
T
A
= 25°C
T
A
= 150°C
0.1
T
A
= 25°C
T
A
= −55°C
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 1. Collector−Emitter Saturation Voltage
vs. Collector Current
1000
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
T
A
= 150°C
T
A
= 25°C
100
T
A
= −55°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
Figure 2. Base−Emitter Saturation Voltage vs.
Collector Current
T
A
= 25°C
10 mA
100 mA
300 mA
I
C
= 500 mA
10
0.1
1
10
100
1000
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
T
A
= 80°C
0.5
0.4
0.3
0.2
1
V
CE
= 5 V
10
100
1000
1
0.1
T
A
= 150°C
T
A
= −55°C
T
A
= 25°C
T
A
= −30°C
C, CAPACITANCE (pF)
100
C
ibo
Figure 4. Saturation Region
10
C
obo
1
10
100
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
Figure 5. Base−Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Capacitance
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3
MSD602−RT1G
TYPICAL CHARACTERISTICS
1000
V
CE
= 1 V
T
A
= 25°C
10000
I
C
, COLLECTOR CURRENT (mA)
100
ms
1000
1s
100 ms
10 ms
1 ms
f
tau
, CURRENT−GAIN BANDWIDTH (MHz)
10
ms
1
ms
100
100
10
10
0.1
1
1
10
100
1000
1
I
C
, COLLECTOR CURRENT (mA)
Single Pulse Test at T
A
= 25°C
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
1000
Duty Cycle = 50%
100
R
qJA
, (°C/W)
20%
10%
5%
2%
1%
Figure 8. Safe Operating Area
10
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 9. Thermal Response
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4
MSD602−RT1G
PACKAGE DIMENSIONS
SC*
59
CASE 318D*
04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
3
H
E
1
E
2
b
e
A
A1
L
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
SCALE 10:1
*For additional information on our Pb
*
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
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