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SMUN2214T1

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SC-59
包装说明
CASE 318D-04, SC-59, 3 PIN
针数
3
制造商包装代码
CASE 318D-04
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
80
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
湿度敏感等级
1
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
30
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
MUN2211T1, SMUN2211T1,
NSVMUN2211T1 Series
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−59 package which is designed for low power surface
mount applications.
Features
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating
Human Body Model: Class 1
Machine Model: Class B
The SC−59 Package can be Soldered Using Wave or Reflow
The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
AEC−Q101 Qualified and PPAP Capable
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Packages are Available*
SC−59
CASE 318D
STYLE 1
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
PIN 2
BASE
(INPUT)
R
1
R
2
MARKING DIAGRAM
8x M
G
G
1
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
8x
M
G
= Device Code (Refer to page 2)
= Date Code*
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the Device Marking and
Resistor Values table on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
Rev. 15
1
Publication Order Number:
MUN2211T1/D
MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
R
qJA
R
qJL
T
J
, T
stg
Symbol
P
D
Max
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
−55
to +150
Unit
mW
°C/W
°C/W
°C/W
°C
DEVICE MARKING AND RESISTOR VALUES
Device
MUN2211T1
MUN2211T1G,
SMUN2211T1G
MUN2211T3
MUN2211T3G,
SMUN2211T3G
MUN2212T1
MUN2212T1G,
SMUN2212T1G,
NSVMUN2212T1G
MUN2213T1
MUN2213T1G,
SMUN2213T1G
MUN2214T1
MUN2214T1G,
SMUN2214T1G
MUN2214T3
MUN2214T3G,
SMUN2214T3G
MUN2215T1
MUN2215T1G
MUN2216T1
MUN2216T1G,
SMUN2216T1G
MUN2230T1
MUN2230T1G,
SMUN2230T1G
MUN2231T1 (Note 3)
MUN2231T1G (Note 3)
MUN2232T1
MUN2232T1G,
SMUN2232T1G
MUN2233T1
MUN2233T1G,
NSVMUN2233T1G
MUN2234T1 (Note 3)
Package
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
Marking
8A
8A
8A
8A
8B
8B
R1 (K)
10
10
10
10
22
22
R2 (K)
10
10
10
10
22
22
Shipping
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
8C
8C
8D
8D
8D
8D
8E
8E
8F
8F
8G
8G
8H
8H
8J
8J
8K
8K
8L
47
47
10
10
10
10
10
10
4.7
4.7
1.0
1.0
2.2
2.2
4.7
4.7
4.7
4.7
22
47
47
47
47
47
47
1.0
1.0
2.2
2.2
4.7
4.7
47
47
47
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
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2
MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
MUN2234T1G (Note 3)
MUN2236T1
MUN2236T1G
MUN2237T1
MUN2237T1G
MUN2240T1 (Note 3)
MUN2240T1G,
SMUN2240T1G (Note 3)
MUN2241T1 (Note 3)
MUN2241T1G (Note 3)
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
8L
8N
8N
8P
8P
8T
8T
8U
8U
22
100
100
47
47
47
47
100
100
47
100
100
22
22
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
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3
MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN2211T1, SMUN2211T1
MUN2212T1, SMUN2212T1, NSVMUN2212T1
MUN2213T1, SMUN2213T1
MUN2214T1, SMUN2214T1
MUN2215T1
MUN2216T1, SMUN2216T1
MUN2230T1, SMUN2230T1
MUN2231T1
MUN2232T1, SMUN2232T1
MUN2233T1, NSVMUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1, SMUN2240T1
MUN2241T1
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
50
50
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
Vdc
Vdc
100
500
nAdc
nAdc
mAdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2211T1, SMUN2211T1
MUN2212T1, SMUN2212T1, NSVMUN2212T1
MUN2213T1, SMUN2213T1
MUN2214T1, SMUN2214T1
MUN2215T1
MUN2216T1, SMUN2216T1
MUN2230T1, SMUN2230T1
MUN2231T1
MUN2232T1, SMUN2232T1
MUN2233T1, NSVMUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1, SMUN2240T1
MUN2241T1
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
MUN2211T1, SMUN2211T1
MUN2212T1, SMUN2212T1, NSVMUN2212T1
MUN2213T1, SMUN2213T1
MUN2214T1, SMUN2214T1
MUN2236T1
(I
C
= 10 mA, I
B
= 5 mA)
MUN2230T1, SMUN2230T1
MUN2231T1
MUN2237T1
MUN2241T1
(I
C
= 10 mA, I
B
= 1 mA)
MUN2215T1
MUN2216T1, SMUN2216T1
MUN2232T1, SMUN2232T1
MUN2233T1, NSVMUN2233T1
MUN2234T1
MUN2240T1, SMUN2240T1
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
V
CE(sat)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
Vdc
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4
MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5) (Continued)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
MUN2211T1, SMUN2211T1
MUN2212T1, SMUN2212T1, NSVMUN2212T1
MUN2214T1, SMUN2214T1
MUN2215T1
MUN2216T1, SMUN2216T1
MUN2230T1, SMUN2230T1
MUN2231T1
MUN2232T1, SMUN2232T1
MUN2233T1, NSVMUN2233T1
MUN2234T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
MUN2213T1, SMUN2213T1
MUN2240T1, SMUN2240T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
MUN2236T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
MUN2237T1
(V
CC
= 5.0 V, V
B
= 5.0 V, R
L
= 1.0 kW)
MUN2241T1
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
MUN2211T1, SMUN2211T1
MUN2212T1, SMUN2212T1, NSVMUN2212T1
MUN2213T1, SMUN2213T1
MUN2214T1, SMUN2214T1
MUN2233T1, NSVMUN2233T1
MUN2234T1
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
MUN2230T1, SMUN2230T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
MUN2215T1
MUN2216T1, SMUN2216T1
MUN2231T1
MUN2232T1, SMUN2232T1
MUN2236T1
MUN2237T1
MUN2240T1, SMUN2240T1
MUN2241T1
V
OL
V
OH
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Vdc
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参数对比
与SMUN2214T1相近的元器件有:SMUN2213T1、SMUN2216T1、SMUN2230T1。描述及对比如下:
型号 SMUN2214T1 SMUN2213T1 SMUN2216T1 SMUN2230T1
描述 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 SC-59 SC-59 SC-59 SC-59
包装说明 CASE 318D-04, SC-59, 3 PIN SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3
制造商包装代码 CASE 318D-04 CASE 318D-04 CASE 318D-04 CASE 318D-04
Reach Compliance Code not_compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 80 160 3
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e0 e0 e0 e0
元件数量 1 1 1 1
端子数量 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 240 240 240 NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子面层 Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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