IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
OptiMOS
®
-T2 Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
100
3.5
120
V
mW
A
Features
• N-channel - Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB120N10S4-03
IPI120N10S4-03
IPP120N10S4-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N1003
4N1003
4N1003
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
1)
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=60A
-
-
T
C
=25°C
-
Value
120
120
480
770
120
±20
250
-55 ... +175
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2014-06-30
IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
-
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=180µA
V
DS
=100V,
V
GS
=0V
V
DS
=100V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=100A
V
GS
=10V,
I
D
=100A,
SMD version
100
2.0
-
-
-
-
-
-
2.7
0.1
10
-
3.4
3.0
-
3.5
1
100
100
3.9
3.5
nA
mW
µA
V
-
-
-
-
-
-
-
-
0.6
62
62
40
K/W
Values
typ.
max.
Unit
Rev. 1.0
page 2
2014-06-30
IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,
V
GS
=10V,
I
D
=120A,
R
G
=3.5W
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
7780
2460
150
20
10
45
40
10120 pF
3200
300
-
-
-
-
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=80V,
I
D
=120A,
V
GS
=0 to 10V
-
-
-
-
36
21
108
4.7
47
42
140
-
nC
V
I
S
I
S,pulse
V
SD
-
T
C
=25°C
-
V
GS
=0V,
I
F
=100A,
T
j
=25°C
V
R
=50V,
I
F
=50A,
di
F
/dt =100A/µs
-
-
-
1.0
120
480
1.3
A
Diode forward voltage
V
Reverse recovery time
2)
t
rr
-
80
-
ns
Reverse recovery charge
2)
1)
Q
rr
-
170
-
nC
Current is limited by bondwire; with an
R
thJC
= 0.6K/W the chip is able to carry 186A at 25°C.
Specified by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-30
IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
1 Power dissipation
P
tot
= f(T
C
);
V
GS
= 10 V
2 Drain current
I
D
= f(T
C
);
V
GS
= 10 V; SMD
300
140
250
120
100
200
P
tot
[W]
80
150
I
D
[A]
60
40
20
0
0
50
100
150
200
0
50
100
150
200
100
50
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
1 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
10 µs
1 ms
100 µs
10
0
100
0.5
Z
thJC
[K/W]
I
D
[A]
10
-1
0.1
0.05
10
10
-2
0.01
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2014-06-30
IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
480
10 V
7V
6V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
10
5V
5.5 V
6V
360
8
240
R
DS(on)
[mW]
5.5 V
I
D
[A]
6
5V
120
4
7V
10 V
0
0
1
2
3
4
5
2
0
120
240
360
480
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
480
-55 °C
25 °C
175 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 100 A;
V
GS
= 10 V; SMD
7
6
360
240
R
DS(on)
[mW]
3
4
5
6
7
5
I
D
[A]
4
120
3
0
2
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2014-06-30
