SPB80N10L
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
100
14
80
V
A
m
P-TO263-3-2
Type
SPB80N10L
Package
P-TO263-3-2
Ordering Code
Q67042-S4171
Marking
80N10L
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25°C
T
C
=100°C
Symbol
I
D
Value
80
58
Unit
A
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
320
700
25
6
±20
250
-55... +175
55/175/56
kV/µs
V
W
°C
mJ
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
=80A,
V
DS
=0V,
di/dt=200A/µs
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
I
D
=80 A ,
V
DD
=25V,
R
GS
=25
2005-02-15
SPB80N10L
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
-
max.
0.6
62.5
62
40
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=2mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
100
1.2
Values
typ.
-
1.6
max.
-
2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 2 mA
Zero gate voltage drain current
V
DS
=100V,
V
GS
=0V,
T
j
=25°C
V
DS
=100V,
V
GS
=0V,
T
j
=150°C
µA
0.1
-
10
15
11
1
100
100
24
14
nA
m
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
V
GS
=4.5V,
I
D
=58A
Drain-source on-state resistance
V
GS
=10V,
I
D
=58A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2005-02-15
Drain-source on-state resistance
SPB80N10L
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
I
D
=58A
Symbol
Conditions
min.
Values
typ.
52
3630
640
345
14
60
82
20
max.
-
4540
800
430
21
90
123
30
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f=1MHz
V
DD
=50V,
V
GS
=10V,
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=80A
V
R
=50V,
I
F =
l
S
,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=80V,
I
D
=80A
V
DD
=80V,
I
D
=80A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=80V,
I
D
=80A
I
S
T
C
=25°C
Page 3
I
D
=80A,
R
G
=1.6
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
26
-
-
-
-
-
-
-
S
pF
ns
-
-
-
-
14
65
160
4.2
21
98
240
-
nC
V
-
-
-
-
-
-
-
0.9
95
330
80
320
1.3
140
500
A
V
ns
nC
2005-02-15
SPB80N10L
1 Power dissipation
P
tot
=
f
(T
C
)
SPP80N10L
2 Drain current
I
D
=
f
(T
C
)
parameter:
V
GS
10 V
90
SPP80N10L
280
W
240
220
200
A
70
60
P
tot
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140 160
°C
190
I
D
180
50
40
30
20
10
0
0
20
40
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
3
SPP80N10L
4 Max. transient thermal impedance
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
SPP80N10L
K/W
A
t
p = 15.0µs
10
0
10
2
Z
thJC
10
-1
I
D
100 µs
/
I
D
=
V
10
-2
D = 0.50
0.20
1 ms
10
1
DS
(on
)
DS
10
-3
R
10 ms
10
-4
single pulse
DC
10
0 -1
10
10
-5 -7
10
10
0
10
1
10
2
V
10
3
10
-6
V
DS
Page 4
60
80
100 120 140 160
°C
190
T
C
0.10
0.05
0.02
0.01
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2005-02-15
SPB80N10L
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
190
SPP80N10L
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
80
SPP80N10L
P
tot
= 250W
l k ji h g
f
e
V
GS [V]
a
2.5
b
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
A
160
140
b
c
d
e
c
d
I
D
120
100
80
60
40
20
a
e
R
DS(on)
d
f
g
h
i
c
j
k
l
b
0
0
1
2
3
4
V
6
V
DS
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
70
A
60
55
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
60
50
I
D
g
fs
45
40
35
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
GS
Page 5
60
50
40
30
20
10
V
GS
[V] =
b
3.0
c
3.5
d
4.0
e
f
4.5 5.0
g
5.5
h
i
6.0 6.5
j
7.0
m
f
h ig
j
l k
k
l
8.0 10.0
0
0
20
40
60
80
100
120
140
A
170
I
D
S
50
45
40
35
30
25
20
15
10
5
0
0
10
20
30
40
A
I
D
60
2005-02-15
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