SPD30N08S2L-21
OptiMOS
®
Power-Transistor
Feature
•
N-Channel
Product Summary
V
DS
R
DS(on)
I
D
75
20.5
30
P- TO252 -3-11
V
mΩ
A
•
Enhancement mode
•
Logic Level
•
175°C operating temperature
•
Avalanche rated
•
dv/dt rated
Type
SPD30N08S2L-21
Package
Ordering Code
P- TO252 -3-11 Q67060-S7414
Marking
2N08L21
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
1)
T
C
=25°C
Value
30
30
Unit
A
I
D
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
120
240
14
6
±20
136
-55... +175
55/175/56
kV/µs
V
W
°C
mJ
Avalanche energy, single pulse
I
D
=30 A ,
V
DD
=25V,
R
GS
=25Ω
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode dv/dt
I
S
=30A,
V
DS
=60V,
di/dt=200A/µs,
T
jmax
=175°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPD30N08S2L-21
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
0.7
-
-
-
max.
1.1
100
75
50
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
75
1.2
Values
typ.
-
1.6
max.
-
2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=80µA
Zero gate voltage drain current
V
DS
=75V,
V
GS
=0V,
T
j
=25°C
V
DS
=75V,
V
GS
=0V,
T
j
=125°C
µA
0.01
1
1
19.1
15.3
1
100
100
26
20.5
nA
mΩ
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=25A
Drain-source on-state resistance
V
GS
=10V,
I
D
=25A
1Current limited by bondwire ; with an
R
thJC
= 1.1K/W the chip is able to carry
I
D
= 54A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-09
SPD30N08S2L-21
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=60V,
I
D
=30A,
V
GS
=0 to 10V
V
DD
=60V,
I
D
=30A
Symbol
Conditions
min.
Values
typ.
45
1600
320
130
11
15
21
15
max.
-
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=30A
V
GS
=0V,
V
DS
=25V,
f=1MHz
23
-
-
-
-
-
-
-
S
2130 pF
425
200
16
24
30
23
ns
V
DD
=40V,
V
GS
=4.5V,
I
D
=30A,
R
G
=3.9Ω
-
-
-
-
5.1
21
54
3.4
6.8
32
72
-
nC
V
(plateau)
V
DD
=60V,
I
D
=30A
V
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=30A
V
R
=40V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
C
=25°C
-
-
-
-
-
-
-
0.9
52
122
30
120
1.3
65
153
A
V
ns
nC
Page 3
2003-05-09
SPD30N08S2L-21
1 Power dissipation
P
tot
=
f
(T
C
)
parameter:
V
GS
≥
4 V
SPD30N08S2L-21
2 Drain current
I
D
=
f
(T
C
)
parameter:
V
GS
≥
10 V
32
SPD30N08S2L-21
150
W
A
120
110
24
P
tot
100
I
D
100 120 140 160
°C
190
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
20
16
12
8
4
0
0
20
40
60
80
100 120 140 160
°C
190
T
C
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0.01 ,
T
C
= 25 °C
10
3
SPD30N08S2L-21
4 Max. transient thermal impedance
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
SPD30N08S2L-21
K/W
A
10
t
= 10.0µs
p
0
10
2
Z
thJC
=
V
DS
I
D
10
-1
/
I
D
DS
(on
)
100 µs
D = 0.50
10
-2
10
1
R
0.20
0.10
0.05
1 ms
10
-3
0.02
single pulse
0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2003-05-09
SPD30N08S2L-21
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
SPD30N08S2L-21
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
70
SPD30N08S2L-21
75
A
P
tot
= 136W
V
[V]
GS
a
Ω
c
d
e
f
i
h
g
f
60
3.0
3.3
3.5
3.8
4.0
4.3
4.5
4.8
10.0
60
55
50
b
c
d
e
55
R
DS(on)
50
45
40
35
30
25
g
h
I
D
45
e
f
g
h
40
35
30
25
20
15
b
c
d
i
20
15
10
V
[V] =
GS
5
4
c
3.5
d
3.8
e
4.0
f
4.3
g
4.5
h
i
4.8 10.0
i
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
a
V
0
5
0
10
20
30
40
50
A
65
V
DS
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
60
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
50
A
50
45
S
40
35
g
fs
V
5
V
GS
I
D
40
35
30
25
20
30
25
20
15
15
10
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0
5
10
15
20
25
30
A
40
I
D
Page 5
2003-05-09
编程基础
