THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD50N10-8m9L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 15 A, V
GS
= 0 V
V
DD
= 50 V, R
L
= 1
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 50 V, I
D
= 50 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
6
-
-
-
-
-
-
2340
1441
124
46
7.5
10
12.3
12
12
95
120
-
0.8
2950
1810
160
70
-
-
18.5
18
18
145
180
200
1.5
A
V
ns
nC
pF
g
fs
V
DS
= 100 V
V
DS
= 100 V, T
J
= 125 °C
V
DS
= 100 V, T
J
= 175 °C
V
DS
5
V
I
D
= 15 A
I
D
= 15 A, T
J
= 125 °C
I
D
= 15 A, T
J
= 175 °C
I
D
= 10 A
100
1.5
-
-
-
-
50
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0071
-
-
0.0089
67
-
2.5
± 100
1
50
500
-
0.0089
0.0151
0.0187
0.0112
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 15 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0875-Rev. A, 22-Apr-13
Document Number: 62778
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD50N10-8m9L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
I
D
- Drain Current (A)
60
75
Vishay Siliconix
I
D
- Drain Current (A)
V
GS
= 4 V
60
45
40
30
T
C
= 25
°C
20
V
GS
= 3 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
15
T
C
= 125
°C
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= - 55
°C
Output Characteristics
Transfer Characteristics
125
0.015
T
C
= - 55
°C
100
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
T
C
= 25
°C
T
C
= 125
°C
0.012
V
GS
= 4.5 V
0.009
75
V
GS
= 10 V
0.006
50
25
0.003
0
0
10
20
30
40
50
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
4000
10
3200
C - Capacitance (pF)
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 50 A
V
DS
= 50 V
2400
C
iss
6
1600
C
oss
4
800
C
rss
2
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q
g
- Total
Gate
Charge (nC)
Capacitance
S13-0875-Rev. A, 22-Apr-13
Gate Charge
Document Number: 62778
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD50N10-8m9L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 15 A
1.7
V
GS
= 4.5 V
1.4
R
DS(on)
- On-Resistance (Ω)
V
GS
= 10 V
0.12
0.15
Vishay Siliconix
0.09
1.1
0.06
0.8
0.03
T
J
= 150
°C
T
J
= 25
°C
0
2
4
6
8
10
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
0.00
V
GS
-
Gate-to-Source
Voltage (V)
On-Resistance vs. Junction Temperature
100
0.6
On-Resistance vs. Gate-to-Source Voltage
10
0.2
I
S
-
Source
Current (A)
1
V
GS(th)
Variance (V)
T
J
= 150
°C
- 0.2
I
D
= 5 mA
- 0.6
0.1
T
J
= 25
°C
I
D
= 250 μA
0.01
- 1.0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
- 1.4
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Source Drain Diode Forward Voltage
Threshold Voltage
120
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
117
114
111
108
105
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0875-Rev. A, 22-Apr-13
Document Number: 62778
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
