THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM40N10-30
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 6 V
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 1.25
Ω
I
D
≅
40 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 10 V
V
DS
= 50 V, I
D
= 40 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.7
-
-
-
-
2676
285
95
41
11
11
1.3
12
5
23
5
3345
355
120
62
-
-
2.6
18
8
35
8
ns
Ω
nC
pF
g
fs
V
DS
= 100 V
V
DS
= 100 V, T
J
= 125 °C
V
DS
= 100 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 15 A
I
D
= 15 A, T
J
= 125 °C
I
D
= 15 A, T
J
= 175 °C
I
D
= 10 A
100
2.5
-
-
-
-
50
-
-
-
-
-
-
3.0
-
-
-
-
-
0.023
-
-
0.025
52
-
3.5
± 100
1
50
250
-
0.030
0.054
0.067
0.034
-
S
Ω
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 15 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= 30 A, V
GS
= 0 V
-
-
-
0.85
155
1.5
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1873-Rev. D, 10-Aug-15
Document Number: 64716
2
For technical questions, contact:
automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM40N10-30
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
75
V
GS
= 10 V thru 6 V
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vishay Siliconix
75
60
45
V
GS
= 5 V
30
45
30
T
C
= 25 °C
15
V
GS
= 4 V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
15
T
C
= 125 °C
0
0
T
C
= - 55 °C
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Output Characteristics
125
0.10
Transfer Characteristics
g
fs
- Transconductance (S)
T
C
= - 55 °C
75
T
C
= 25 °C
50
R
DS(on)
- On-Resistance (Ω)
100
0.08
0.06
0.04
V
GS
= 6 V
0.02
V
GS
= 10 V
25
T
C
= 125 °C
0
0
12
24
36
48
60
I
D
- Drain Current (A)
0
0
15
30
45
60
75
I
D
- Drain Current (A)
Transconductance
5000
10
On-Resistance vs. Drain Current
I
D
= 40 A
4000
C - Capacitance (pF)
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 50 V
6
3000
C
iss
2000
4
1000
C
oss
C
rss
2
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q
g
- Total
Gate
Charge (nC)
Capacitance
S15-1873-Rev. D, 10-Aug-15
Gate Charge
Document Number: 64716
3
For technical questions, contact:
automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM40N10-30
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
100
I
D
= 15 A
2.1
I
S
-
Source
Current (A)
10
V
GS
= 10 V
T
J
= 150 °C
1
T
J
= 25 °C
0.1
1.7
1.3
0.9
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.12
0.8
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.3
0.09
V
GS(th)
Variance (V)
- 0.2
I
D
= 5 mA
- 0.7
I
D
= 250 μA
0.06
T
J
= 150 °C
0.03
T
J
= 25 °C
- 1.2
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
- 1.7
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
130
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
124
118
112
106
100
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1873-Rev. D, 10-Aug-15
Document Number: 64716
4
For technical questions, contact:
automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
这些集成电路有HFE4752、SLE4520、MA8X8/SA8X8、SAXXXX等。其中多数要与单片机连接才能完成SPWM控制功能，对于要求较高的逆变系统来说仍然不够简捷。INTEL公司推出的16位单片机8XC196MC片内集成了三相SPWM波形发生器WFG（Wave Form Generator，以下简称WFG） ，为逆变控制电路的全数字化设计提供了强有力的硬件支持，它的软件指令丰富，与其它...[详细]
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