SSM3J312T
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J312T
High Speed Switching Applications
Power Management Switch Applications
•
•
1.8V drive
Low on-resistance:
Unit: mm
R
on
= 237mΩ (max) (@V
GS
=
−1.8
V)
R
on
= 142mΩ (max) (@V
GS
=
−2.5
V)
R
on
= 91mΩ (max) (@V
GS
=
−4.0
V)
+0.2
2.8-0.3
0.4±0.1
３
0.15
+0.2
1.6-0.1
Absolute Maximum Ratings
(Ta = 25°C)
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
−12
±
8
−2.7
−5.4
700
150
−55~150
V
V
A
mW
°C
°C
0.7±0.05
1.9±0.2
Characteristic
Symbol
Rating
Unit
0.95 0.95
2.9±0.2
１
２
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6mm, Cu Pad: 645 mm
2
)
Note:
0½0.1
TSM
1.GATE
2.SOURCE
3.DRAIN
JEDEC
JEITA
TOSHIBA
Weight: 10 mg (typ.)
―
―
2-3S1A
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Turn-on time
Turn-off time
t
on
t
off
V
DSF
V
DD
= −10
V, I
D
= −0.75
A,
V
GS
=
0~−2.5 V, R
G
=
4.7
Ω
I
D
=
2.7A, V
GS
=
0 V
(Note2)
V
DS
=
−6
V, I
DS
=
−2.7
A
V
GS
=
−4
V
V
DS
= −10
V, V
GS
=
0, f
=
1 MHz
Test Conditions
I
D
= −1
mA, V
GS
=
0
I
D
= −1
mA, V
GS
= +8
V
V
DS
= −12
V, V
GS
=
0
V
GS
= ±8V,
V
DS
=
0
V
DS
= −3
V, I
D
= −1
mA
V
DS
= −3
V, I
D
=−
1 A
I
D
= −1.0
A, V
GS
= −4.0
V
Drain-Source on-resistance
I
D
= −0.75
A, V
GS
= −2.5
V
I
D
= −0.3
A, V
GS
= −1.8
V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
(Note2)
(Note2)
(Note2)
(Note2)
Min
−12
−4
⎯
⎯
−0.3
2.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
4.5
69
97
137
550
170
155
7.5
6.0
1.5
32
37
0.85
Max
⎯
⎯
−10
±1
−1.0
⎯
91
142
237
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
ns
V
nC
pF
mΩ
Unit
V
μA
μA
V
S
Drain-Source forward voltage
Note2: Pulse test
1
2007-11-01
0.16±0.05
SSM3J312T
Switching Time Test Circuit
(a) Test circuit
0
IN
R
G
R
L
V
DD
−2.5
V
90%
OUT
(b) V
IN
0V
10%
−
2.5V
10
μs
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
on
t
off
t
f
V
DD
=
-10 V
R
G
=
4.7
Ω
D.U.
<
1%
=
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
Marking
3
Equivalent Circuit
(top view)
3
JJ3
1
2
1
2
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
=−1mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th,
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
2
2007-11-01
SSM3J312T
-5
ID - VDS
ID - VGS
10
-10
-4.0
-2.5
-4
1
Drain current ID (A)
-3
-1.8
Drain Current ID (A)
Ta = 85 °C
0.1
-1.5
-2
0.01
25 °C
- 25 °C
Common Source
VDS = - 3 V
0
1
2
VGS = -1.2 V
-1
Common Source
Ta=25°C
-0
-0.0
0.001
0.0001
-0.2
-0.4
-0.6
-0.8
-1.0
Drain-Source voltage VDS (V)
Gate-Source voltage VGS (V)
RDS(ON) - VGS
200
RDS(ON) - Ta
200
Drain-Source on-resistance
RDS(ON) (mΩ)
Drain-Source on-resistance
RDS(ON) (mΩ)
160
Common Source
Ta=25°C
ID = - 1 A
Common Source
160
−
1.8 V /
−
0.3 A
120
120
−
2.5 V /
−
0.75 A
80
80
VGS =
−
4V / ID =
−
1 A
40
40
0
-0
-2
-4
-6
-8
-10
0
-50
0
50
100
150
Gate-Source voltage VGS (V)
Ambient temperature Ta(
℃
)
RDS(ON) - ID
200
Vth - Ta
-1
Common Source
ID=-1mA
VDS=-3V
Drain-Source on-resistance
RDS(ON) (mΩ)
−
1.8 V
Gate threshold voltage Vth(V)
Common Source
Ta=25°C
160
-0.8
120
−
2.5 V
80
-0.6
-0.4
VGS =
−
4 V
40
-0.2
0
-0
-1
-2
-3
-4
-5
-0
-50
0
50
100
150
Drain current ID (A)
Ambient temperature Ta(°C)
3
2007-11-01
SSM3J312T
|Yfs| - ID
10.0
IDR - VDS
-10
Drain reverse current IDR (A)
Common Source
VGS=0V
Ta=25°C
Forward transfer admittance
|Yfs| (S)
25°C
-25°C
Ta=85°C
1.0
-1
25°C
-0.1
Ta=85°C
−
25°C
-0.01
Common Source
VDS =
−
3 V
Ta = 25 °C
0.1
-0.01
-0.1
-1
-10
-0.001
0
0.2
0.4
0.6
0.8
Drain-Source voltage VDS (V)
1
Drain current ID (A)
1000
C - VDS
t - ID
1000
Common Source
VDD=10V
VGS=0 to 2.5V
Ta=25°C
toff
Capacitance C (pF)
Switching time t (ns)
Ciss
100
tf
ton
10
tr
Common Source
VGS=0V
f=1MHz
Ta=25°C
100
0.1
1
Coss
Crss
10
100
1
-0.01
-0.1
-1
-10
Drain-Source voltage VDS (V)
Drain current ID (A)
Dynamic Input Characteristic
-8
(V)
Common Source
ID
=
-2.7 A
Ta
=
25°C
V
GS
Gate–Source voltage
-6
-4
VDD =
−
6V
VDD =
−
10V
-2
0
0
3
6
9
Qg
12
(nC)
15
Total Gate Charge
4
2007-11-01
SSM3J312T
r
th
– t
w
Drain power dissipation P
D
(mW)
1000
1000
P
D
– T
a
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
2
Cu Pad : 645 mm )
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
2
Cu Pad : 0.8 mm ×3)
Transient thermal impedance Rth (°C/W)
b
800
a
100
a
600
400
b
10
Single Pulse
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 645 mm
2
)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 0.8 mm
2
×3)
200
1
0.001
0.01
0.1
1
10
100
1000
0
-40
-20
0
20
40
60
80
100 120 140 160
Pulse width
t
w
(s)
Ambient temperature
T
a
(°C)
5
2007-11-01
模拟与混合信号
