SSM6K204FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K204FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
•
•
1.5V drive
Low ON-resistance:
R
on
= 307 mΩ (max) (@V
GS
= 1.5V)
R
on
= 214 mΩ (max) (@V
GS
= 1.8V)
R
on
= 164 mΩ (max) (@V
GS
= 2.5V)
R
on
= 126 mΩ (max) (@V
GS
= 4.0V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
±
10
2.0
4.0
500
150
−55
to 150
Unit
V
V
A
mW
°C
°C
1, 2, 5, 6 : Drain
3
ES6
4
: Gate
: Source
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm )
Note:
JEDEC
JEITA
TOSHIBA
―
―
2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
Test Condition
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
– 10 V
V
DS
=
20 V, V
GS
=
0 V
V
GS
= ±
10 V, V
DS
=
0 V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
1.0 A
I
D
=
1.0 A, V
GS
=
4.0 V
Drain–source ON-resistance
R
DS (ON)
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
I
D
=
0.3 A, V
GS
=
1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
= 10 V, I
D
= 2.0 A
V
GS
= 4 V
V
DD
=
10 V, I
D
=
0.5 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
I
D
= −
2.0 A, V
GS
=
0 V
(Note2)
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
Min
20
12
⎯
⎯
0.35
2.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
5.2
90
115
150
185
195
35
29
3.4
2.3
1.1
8.0
9.0
– 0.85
Max
⎯
⎯
1
±1
1.0
⎯
126
164
214
307
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
– 1.2
ns
V
nC
pF
mΩ
Unit
V
V
μA
μA
V
S
Drain–source forward voltage
Note 2: Pulse test
1
2007-11-01
SSM6K204FE
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
OUT
IN
0V
R
G
10
μs
V
DD
=
10 V
R
G
=
4.7
Ω
D.U.
<
1%
=
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
10%
2.5 V
90%
2.5 V
0
V
DD
(c) V
OUT
V
DD
10%
90%
t
r
t
on
t
f
t
off
V
DS (ON)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
KN
1
2
3
1
2
3
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
= 1 mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on).
)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
SSM6K204FE
I
D
– V
DS
4
10 V
4.0 V
2.5 V
Common Source
Ta
=
25 °C
10
Common Source
VDS
=
3 V
I
D
– V
GS
(A)
3
I
D
I
D
2
1.5 V
(A)
Drain current
1.8 V
1
Drain current
0.1
Ta
=
100 °C
0.01
−
25 °C
0.001
25 °C
1
VGS = 1.2 V
0
0
0.2
0.4
0.6
0.8
1
0.0001
0
1.0
2.0
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
500
ID
=1.0A
Common Source
Ta
=
25°C
500
R
DS (ON)
– I
D
Common Source
Ta
=
25°C
Drain–source ON-resistance
R
DS (ON)
(mΩ)
300
Drain–source ON-resistance
R
DS (ON)
(mΩ)
400
400
300
200
25 °C
100
200
1.5 V
1.8 V
2.5 V
Ta
=
100 °C
100
VGS = 4.0 V
0
−
25 °C
0
0
2
4
6
8
10
0
1
2
3
4
Gate–source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
400
1.0
V
th
– Ta
Common Source
V
th
(V)
Common Source
VDS
=
3V
ID
=
1 mA
Drain–source ON-resistance
R
DS (ON)
(mΩ)
300
0.3 A / 1.5 V
Gate threshold voltage
200
0.5 A / 1.8 V
1.0 A / 2.5 V
0.5
100
ID
=
1.0 A / VGS
=
4.0 V
0
−50
0
50
100
150
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2007-11-01
SSM6K204FE
(S)
10
Common Source
Ta
=
25°C
3
VDS
=
3 V
|Y
fs
| – I
D
(A)
I
DR
– V
DS
10
Common Source
V
GS
=
0 V
1
G
D
I
DR
⎪Y
fs
⎪
Forward transfer admittance
Drain reverse current
I
DR
1
0.1
S
Ta =100 °C
25 °C
0.3
0.01
−25
°C
0.1
0.01
0.1
1
10
0.001
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
Drain current
I
D
(A)
Drain–source voltage
V
DS
(V)
1000
C – V
DS
1000
t – I
D
Common Source
VDD
=
10 V
VGS
=
0 to 2.5 V
Ta
=
25 °C
RG
=
4.7Ω
500
(ns)
(pF)
300
Ciss
toff
100
tf
C
Capacitance
100
50
30
Common Source
Ta
=
25°C
f
=
1 MHz
VGS
=
0 V
10
0.1
1
10
Coss
Crss
Switching time
t
10
ton
tr
100
1
0.01
0.1
1
10
Drain–source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
10
Common Source
(V)
ID
=
2.0 A
8
Ta
=
25°C
V
GS
Gate–Source voltage
6
VDD=10V
4
VDD=16V
2
0
0
2
4
6
8
10
Total Gate Charge
Qg
(nC)
4
2007-11-01
SSM6K204FE
r
th
100
Single Pulse
Mounted on FR4 board
2
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm )
–
t
w
Drain power dissipation P
D
(mW)
1000
P
D
– T
a
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
2
Cu Pad : 645 mm )
Transient thermal impedance Rth (°C/W)
800
100
600
400
10
200
1
0.001
0.01
0.1
1
10
100
1000
0
-40
-20
0
20
40
60
80
100 120 140 160
Pulse width
t
w
(s)
Ambient temperature
Ta
(°C)
5
2007-11-01
