SSM6N35FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FE
○
High-Speed Switching Applications
○
Analog Switch Applications
•
•
•
Unit: mm
1.6±0.05
1.2±0.05
1.2-V drive
1.6±0.05
N-ch 2-in-1
Low ON-resistance: R
on
= 20
Ω
(max) (@V
GS
= 1.2 V)
: R
on
= 8
Ω
(max) (@V
GS
= 1.5 V)
: R
on
= 4
Ω
(max) (@V
GS
= 2.5 V)
: R
on
= 3
Ω
(max) (@V
GS
= 4.0 V)
1.0±0.05
0.5 0.5
1
2
3
6
5
4
0.2±0.05
0.12±0.05
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
±10
180
360
150
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
0.55±0.05
1.Source1
4.Source2
5.Gate2
6.Drain1
ES6
JEDEC
JEITA
TOSHIBA
2.Gate1
3.Drain2
-
-
2-2N1A
Weight: 3.0 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.135 mm
×
6)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
KZ
1
2
3
1
Q1
Q2
2
3
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SSM6N35FE
Electrical Characteristics
(Ta
=
25°C) (Q1, Q2 Common)
Characteristics
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
⏐Y
fs
⏐
Test Condition
V
GS
= ±10
V, V
DS
=
0V
I
D
=
0.1 mA, V
GS
=
0V
V
DS
=
20 V, V
GS
=
0V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
50 mA
I
D
=
50 mA, V
GS
=
4 V
Drain–source ON-resistance
R
DS (ON)
I
D
=
50 mA, V
GS
=
2.5 V
I
D
=
5 mA, V
GS
=
1.5 V
I
D
=
5 mA, V
GS
=
1.2 V
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
C
iss
C
rss
C
oss
t
on
t
off
V
DSF
V
DD
=
3 V, I
D
=
50 mA,
V
GS
=
0 to 2.5 V
I
D
=
- 180 mA, V
GS
=
0V
(Note 2)
V
DS
=
3 V, V
GS
=
0V, f
=
1 MHz
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Min
⎯
20
⎯
0.4
115
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.5
2
3
5
9.5
4.1
9.5
115
300
-0.9
Max
±10
⎯
1
1.0
⎯
3
4
8
20
⎯
⎯
⎯
⎯
⎯
-1.2
ns
V
pF
Ω
Unit
μA
V
μA
V
mS
Drain–source forward voltage
Note 2: Pulse test
Switching Time Test Circuit
(Q1, Q2 Common)
(a) Test Circuit
2.5 V
0
10
μs
V
DD
=
3 V
D.U.
≤
1%
V
IN
: t
r
, t
f
<
5 ns
(Z
out
=
50
Ω)
Common Source
Ta
=
25°C
OUT
IN
0V
50
Ω
R
L
V
DD
10%
(b) V
IN
2.5 V
90%
(c) V
OUT
V
DD
10%
90%
t
r
t
on
t
off
t
f
V
DS (ON)
Usage Considerations
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (1 mA for the
SSM6N35FE). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2008-03-10
SSM6N35FE
I
D
– V
DS
400
10 V
4V
2.5 V
Common Source
Ta
=
25°C
100
1000
Common Source
VDS
=
3 V
I
D
– V
GS
(mA)
300
1.8 V
(mA)
I
D
I
D
10
Ta
=
100°C
Drain current
Drain current
200
1.5 V
100
VGS
=
1.2 V
25°C
1
−25°C
0.1
0
0
0.5
1
1.5
2
0.01
0
1
2
3
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
10
Common Source
ID
=
5 mA
10
R
DS (ON)
– V
GS
Common Source
ID
=
50 mA
Drain–source ON-resistance
R
DS (ON)
(Ω)
5
Drain–source ON-resistance
R
DS (ON)
(Ω)
5
25°C
Ta
=
100°C
−25°C
0
0
2
4
6
8
10
25°C
Ta
=
100°C
−25°C
0
0
2
4
6
8
10
Gate–source voltage
V
GS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– I
D
10
Common Source
Ta
=
25°C
10
Common Source
R
DS (ON)
– Ta
Drain–source ON-resistance
R
DS (ON)
(Ω)
5
VGS
=
1.2 V
Drain–source ON-resistance
R
DS (ON)
(Ω)
5
VGS
=
1.2 V, ID
=
5 mA
1.5 V
2.5 V
4V
0
1
10
100
1000
1.5 V, 5 mA
2.5 V, 50 mA
4 V, 50 mA
0
−50
0
50
100
150
Drain current
I
D
(mA)
Ambient temperature
Ta
(°C)
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2008-03-10
SSM6N35FE
V
th
– Ta
V
th
(V)
Common Source
ID
=
1 mA
VDS
=
3 V
⎪Y
fs
⎪
– I
D
(mS)
⎪Y
fs
⎪
Forward transfer admittance
1000
500
300
1.0
100
50
30
Gate threshold voltage
0.5
10
5
3
Common Source
VDS
=
3 V
Ta
=
25°C
10
100
1000
0
−50
0
50
100
150
1
1
Ambient temperature
Ta
(°C)
Drain current
I
D
(mA)
I
DR
– V
DS
1000
C – V
DS
100
50
(mA)
Common Source
V
GS
=
0 V
D
I
DR
G
I
DR
Drain reverse current
10
C
Capacitance
10
Ciss
5
Common Source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
1
Crss
Coss
S
25°C
Ta
=
100°C
1
−25°C
0.1
(pF)
100
0.01
0
0.1
0.5
1
5
10
50
100
−0.5
−1
−1.5
Drain–source voltage
V
DS
(V)
Drain–source voltage
V
DS
(V)
t – I
D
5000
3000 toff
Common Source
VDD
=
3 V
VGS
=
0 to 2.5 V
Ta
=
25°C
250
P
D
*
– Ta
Mounted on a FR4 board.
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.135 mm
×
6)
(mW)
P
D
*
Drain power dissipation
(ns)
200
1000
500
300
tf
t
150
Switching time
100
50
30
100
ton
tr
50
10
0.1
1
10
100
1000
0
0
20
40
60
80
100
120
140
160
Drain current
I
D
(mA)
*: Total Rating
Ambient temperature
Ta
(°C)
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2008-03-10
SSM6N35FE
RESTRICTIONS ON PRODUCT USE
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
•
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
•
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
•
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
•
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
•
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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