Bulletin I25188 rev. A 04/00
ST733C..L SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
940A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST733C..L
940
55
1900
25
20000
20950
2000
1820
400 to 800
10 to 20
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
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1
ST733C..L Series
Bulletin I25188 rev. A 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
04
ST733C..L
08
800
900
400
V
RSM
, maximum
non-repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
75
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
2200
2050
1370
500
50
V
DRM
50
40
I
TM
180
o
el
1900
1660
1070
370
50
50
55
3580
3600
2900
1220
50
V
DRM
-
40
I
TM
100µs
3100
3130
2450
980
50
-
55
6800
3750
2120
960
50
V
DRM
-
40
I
TM
Units
5920
3240
1780
770
50
-
55
V
A/µs
°C
A
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST733C..L
940 (350)
55 (85)
1900
20000
20950
16800
17600
Units
A
°C
Conditions
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
t
Maximum I
2
t for fusing
2000
1820
1410
1290
KA
2
s
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
20000
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
2
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ST733C..L Series
Bulletin I25188 rev. A 04/00
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
ST733C..L Units
1.63
1.09
1.20
0.32
mΩ
0.29
600
1000
mA
V
Conditions
I
TM
= 1700A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
Low level value of forward
slope resistance
r
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST733C..L Units
1000
1.5
Min
10
Max
20
µs
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
, I
TM
= 2 x di/dt
Gate pulse: 20V 20Ω, 10µs 0.5µs rise time
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = -40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST733C..L
500
75
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST733C..L Units
60
10
10
20
V
W
A
Conditions
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
T
J
= T
J
max, t
p
≤
5ms
5
200
3
20
0.25
mA
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST733C..L Series
Bulletin I25188 rev. A 04/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST733C..L
-40 to 125
-40 to 150
0.073
0.031
0.011
0.005
14700
(1500)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
255
TO - 200AC (B-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.021
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.022
0.036
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
73
2
3
3
C
4
08
5
L
6
H
7
K
8
1
9
10
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- L = Puk Case TO-200AC (B-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
dv/dt - t
q
combinations available
50
DN
DM
DL
DP
DK
100
EN
EM
EL
EP
EK
200
--
FM *
FL *
FP
FK
400
--
--
HL
HP
H
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
dv/dt (V/µs)
20
10
CN
12
CM
t
q
(µs)
15
CL
18
CP
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
20
CK
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
* Standard part number.
All other types available only on request.
4
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ST733C..L Series
Bulletin I25188 rev. A 04/00
Outline Table
0.7 (0.03) MIN.
27 (1 . 06 ) M AX .
34 (1.34) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20°± 5°
58 .5 (2.3 ) D I A. M A X .
4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
M a xim u m A llo w a b le H e a tsin k T e m p e ra t ur e (°C )
12 0
11 0
10 0
90
80
70
60
50
40
0
10 0
2 00
30 °
ST 7 3 3 C ..L Se rie s
(Sin g le Sid e C o o le d )
R
thJ- hs
(D C ) = 0 .0 7 3 K / W
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( °C )
13 0
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
0
2 00
30°
S T7 3 3 C ..L S e rie s
(S in g le Sid e C o o le d )
R
th J-hs
(D C ) = 0 .0 7 3 K /W
Co nd uctio n A ng le
C o ndu ctio n Pe rio d
60°
90°
120°
180 °
60 °
90°
120°
40 0
180 °
800
DC
1 0 00
300
4 00
50 0
6 00
7 00
60 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n - sta t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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5
工控电子
