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STB15N25T4

15A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3

器件类别:分立半导体    晶体管   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
D2PAK
包装说明
TO-263, D2PAK-3
针数
4
Reach Compliance Code
not_compliant
ECCN代码
EAR99
雪崩能效等级(Eas)
40 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
250 V
最大漏极电流 (Abs) (ID)
15 A
最大漏极电流 (ID)
15 A
最大漏源导通电阻
0.25 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
125 W
最大脉冲漏极电流 (IDM)
60 A
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
STB15N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STB15N25
s
s
s
s
s
s
s
s
V
DSS
250 V
R
DS(on)
< 0.25
I
D
15 A
s
s
TYPICAL R
DS(on)
= 0.2
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INPUT CAPACITANCE
LOW GATE CHARGE
LOW LEAKAGE CURRENT
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
3
12
3
1
I2PAK
TO-262
D2PAK
TO-263
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
250
250
±
20
15
10
60
125
1
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
March 1996
1/6
STB15N25
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
o
o
C/W
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
E
AR
I
AR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
Max Value
15
40
10
10
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
GS
= 0
Min.
250
250
1000
±100
Typ.
Max.
Unit
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating x 0.8
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
T
c
= 125 C
o
ON (∗)
Symbol
V
GS(th)
R
DS(on)
I
D(on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 10 V
Test Conditions
I
D
= 250
µA
I
D
= 7.5 A
I
D
= 7.5 A
T
c
= 100 C
15
o
Min.
2
Typ.
3
Max.
4
0.25
0.5
Unit
V
A
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max
V
DS
= 25 V
f = 1 MHz
I
D
= 7.5 A
V
GS
= 0
Min.
5
1600
270
50
Typ.
Max.
Unit
S
pF
pF
pF
2/6
STB15N25
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
(di/dt)
on
Q
g
Q
gs
Q
gd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 100 V
R
G
= 9.1
V
DD
= 160 V
R
G
= 9.1
V
DD
= 160 V
I
D
= 15 A
I
D
= 15 A
V
GS
= 10 V
I
D
= 15 A
V
GS
= 10 V
V
GS
= 10 V
Min.
Typ.
20
75
470
60
10
25
Max.
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 160 V
R
G
= 9.1
I
D
= 15 A
V
GS
= 10 V
Min.
Typ.
35
30
70
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 15 A
I
SD
= 15 A
V
R
= 100 V
V
GS
= 0
di/dt = 100 A/µs
o
T
j
= 150 C
290
3
21
Test Conditions
Min.
Typ.
Max.
15
60
1.5
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STB15N25
TO-262 (I2PAK) MECHANICAL DATA
mm
MIN.
A
A1
B
B1
B2
C
C2
D
e
E
L
L1
L2
4.3
2.49
0.7
1.2
1.25
0.45
1.21
9
2.44
10
13.2
3.48
1.27
TYP.
MAX.
4.6
2.69
0.93
1.38
1.4
0.6
1.36
9.35
2.64
10.28
13.5
3.78
1.37
MIN.
0.169
0.098
0.027
0.047
0.049
0.017
0.047
0.354
0.096
0.393
0.519
0.137
0.050
inch
TYP.
MAX.
0.181
0.106
0.036
0.054
0.055
0.023
0.053
0.368
0.104
0.404
0.531
0.149
0.054
DIM.
A
C2
B2
B
E
L1
L2
D
L
4/6
e
A1
C
STB15N25
TO-263 (D2PAK) MECHANICAL DATA
mm
MIN.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
4.3
2.49
0.7
1.25
0.45
1.21
9
10
4.88
15
1.27
1.4
TYP.
MAX.
4.6
2.69
0.93
1.4
0.6
1.36
9.35
10.28
5.28
15.85
1.37
1.75
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.354
0.393
0.192
0.590
0.050
0.055
inch
TYP.
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.054
0.068
DIM.
E
C2
L2
A
D
L
L3
B2
B
G
A1
C
5/6
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