S T U/D420S
S amHop Microelectronics C orp.
J uly 05
,
2006
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
40V
F E AT UR E S
( m
Ω
)
I
D
24A
R
DS (ON)
Max
S uper high dense cell design for low R
DS (ON
).
24 @ V
G S
= 10V
30 @ V
G S
= 4.5V
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
D
G
S
G
D
S
G
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
b
-P ulsed
a
S ymbol
V
DS
V
GS
@ T
C
=25 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
40
20
24
75
8
50
-55 to 175
Unit
V
V
A
A
A
W
C
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R
JC
R
JA
3
50
C /W
C /W
1
S T U/D420S
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
b
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 32V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 10A
V
GS
=4.5V, I
D
= 8A
V
DS
= 10V, V
GS
= 10V
V
DS
= 10V, I
D
= 10A
Min Typ
C
Max Unit
40
1
10
1
1.9
17
23.5
30
16
750
110
65
3
13
10
37
12
3
24
V
uA
uA
V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
30
m ohm
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
b
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 15V
I
D
= 1 A
V
GS
= 10V
R
GE N
= 3 ohm
V
DS
=20V, I
D
=10A,V
GS
=10V
V
DS
=20V, I
D
=10A,V
GS
=4.5V
V
DS
=20V, I
D
= 10A
V
GS
=10V
2
ns
ns
ns
ns
nC
nC
nC
nC
15
7
2.5
4
S T U/D420S
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is = 8A
Min Typ Max Unit
0.84
1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
30
V
G S
=4.5
25
T j=125 C
V
G S
=4V
12
15
I
D
, Drain C urrent(A)
20
15
I
D
, Drain C urrent (A)
V
G S
=10V
V
G S
=8V
V
G S
=3.5V
9
25 C
6
10
5
0
0
0.5
1
1.5
2
2.5
3
V
G S
=3V
3
-55 C
0
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
36
1.75
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
30
V
G S
=4.5V
1.60
1.45
1.30
1.15
1.0
0.8
-25
V
G S
=4.5V
I
D
=8A
V
G S
=10V
I
D
=10A
R
DS (on)
(m
Ω
)
24
18
V
G S
=10V
12
6
0
0
6
12
18
24
30
0
25
50
75
100
125 150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
S T U/D420S
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
I
D
=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
54
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
I
D
=10A
Is , S ource-drain current (A)
45
125 C
10.0
25 C
R
DS (on)
(m
Ω
)
36
125 C
27
18
75 C
9
0
25 C
75 C
1.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
G S
, G ate- S ource Voltage (V )
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T U/D420S
900
V
G S
, G ate to S ource V oltage (V )
10
8
6
4
2
0
V
DS
=20V
I
D
=10A
750
C is s
C , C apacitance (pF )
600
450
300
150
C rs s
0
0
5
10
15
20
25
30
6
C os s
0
3
6
9
12
15
18
21 24
V
DS
, Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
220
S witching T ime (ns )
100
80
im
it
1m
10 s
ms
10
0m
1s
s
100
60
10
I
D
, Drain C urrent (A)
T D(off)
Tr
Tf
T D(on)
R
D
S
(O
L
N)
10
DC
1
1
V DS =15V ,ID=1A
V G S =10V
1
0.5
0.1
V
G S
=10V
S ingle P ulse
T c=25 C
6 10
60 100 300 600
1
10
30
60
R g, G ate R es is tance (
Ω
)
V
DS
, Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
2
F igure 12. Maximum S afe
O perating Area
r(t),Normalized E ffective
T ransient T hermal Impedance
1
D=0.5
0.2
0.1
0.1
P
DM
0.05
t
1
0.02
0.01
S ING LE P ULS E
0.01
10
-5
-4
-3
-2
-1
t
2
1.
2.
3.
4.
10
10
10
R
J A
(t)=r (t) * R
J A
R
J A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
J A
(t)
Duty C ycle, D=t
1
/t
2
1
10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
DSP 与 ARM 处理器
