STB22NM60N, STF22NM60N, STI22NM60N
STP22NM60N, STW22NM60N
N-channel 600 V, 0.2
Ω
16 A MDmesh™ II Power MOSFET
,
in D
2
PAK, TO-220FP, I
2
PAK, TO-220 and TO-247
Features
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
■
■
■
V
DSS
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
R
DS(on)
max.
< 0.22
Ω
< 0.22
Ω
< 0.22
Ω
< 0.22
Ω
< 0.22
Ω
I
D
1
3
16 A
16 A
16 A
16 A
16 A
2
1
3
3
12
3
1
2
D²PAK
I²PAK
TO-220FP
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1.
TO-247
3
1
2
TO-220
Application
Switching applications
Internal schematic diagram
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
Device summary
Marking
Package
D²PAK
TO-220FP
22NM60N
I²PAK
Tube
TO-220
TO-247
Packaging
Tape and reel
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
January 2011
Doc ID 15853 Rev 4
1/23
www.st.com
23
Contents
STB/F/I/P/W22NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
Doc ID 15853 Rev 4
STB/F/I/P/W22NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
D²PAK
I²PAK
TO-220
TO-247
± 30
16
10
64
125
15
2500
16
(1)
10
(1)
64
(1)
30
Unit
TO-220FP
V
A
A
A
W
V/ns
V
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
V
ISO
T
J
T
stg
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
C
=25 °C)
Operating junction temperature
Storage temperature
-55 to 150
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
≤
16 A, di/dt
≤
400 A/µs, V
DSpeak
≤
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Table 3.
Symbol
Thermal data
Value
Parameter
D²PAK I²PAK TO-220 TO-247 TO-220FP
Thermal resistance junction-case
max.
Thermal resistance junction-
ambient max.
Thermal resistance junction-pcb
max.
Maximum lead temperature for
soldering purpose
30
300
Unit
R
thj-case
R
thj-amb
R
thj-pcb(1)
T
J
1
62.5
50
4.17
62.5
°C/W
°C/W
°C/W
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Symbol
I
AR
E
AS
Thermal data
Parameter
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
J
max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
6
300
Unit
A
mJ
Doc ID 15853 Rev 4
3/23
Electrical characteristics
STB/F/I/P/W22NM60N
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 1 mA, V
GS
= 0
Min.
600
1
100
100
2
3
0.2
4
0.22
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
V
DS
= Max rating
Zero gate voltage
drain current (V
GS
= 0) V
DS
= Max rating, T
C
=125 °C
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 8 A
Table 6.
Symbol
C
iss
C
oss
C
rss
C
oss eq.(1)
R
g
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
Typ.
1330
84
4.6
181
4.7
44
6
25
Max.
Unit
pF
pF
pF
pF
Ω
nC
nC
nC
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
-
-
V
DS
= 0 to 480 V, V
GS
= 0
f=1 MHz open drain
V
DD
= 480 V, I
D
= 16 A,
V
GS
= 10 V
(see Figure 18)
-
-
-
-
-
-
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
.
4/23
Doc ID 15853 Rev 4
STB/F/I/P/W22NM60N
Electrical characteristics
Table 7.
Symbol
t
d(on)
t
r(v)
t
d(off)
t
f(i)
Switching times
Parameter
Turn-on delay time
Voltage rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 300 V, I
D
= 8 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see Figure 17)
Min.
Typ.
11
18
74
38
Max Unit
ns
ns
ns
ns
-
-
Table 8.
Symbol
I
SD
I
SDM (1)
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 16 A, V
GS
= 0
I
SD
= 16 A, di/dt = 100 A/µs
V
DD
= 60 V
(see Figure 19)
I
SD
= 16 A, di/dt = 100 A/µs
V
DD
= 60 V T
J
= 150 °C
(see Figure 19)
Test conditions
Min. Typ. Max
-
-
-
296
4
26.8
350
4.7
27
16
64
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
-
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15853 Rev 4
5/23
