STH155N75F4-2
STP155N75F4
N-channel 75 V, 4.2 mΩ, 160 A TO-220, H
2
PAK
StripFET™ DeepGATE™ Power MOSFET
Preliminary data
Features
Type
STP155N75F4
STH155N75F4-2
■
■
V
DSS
75 V
75 V
R
DS(on)
max
5.8 mΩ
5.2 mΩ
I
D
120 A
160 A
2
3
Extremely low on-resistance R
DS(on)
100% avalanche tested
3
1
2
3
1
H²PAK
TO-220
Application
■
Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
155N75F4
155N75F4
Package
TO-220
H²PAK
Packaging
Tube
Tape and reel
Order codes
STP155N75F4
STH155N75F4-2
March 2010
Doc ID 15211 Rev 3
1/12
www.st.com
12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Contents
STH155N75F4-2, STP155N75F4
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits
.............................................. 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 15211 Rev 3
STH155N75F4-2, STP155N75F4
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
DS
V
GS
I
D
I
D
I
DM (1)
P
TOT
E
AS (2)
T
stg
T
j
Absolute maximum ratings
Value
Parameter
TO-220
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
Single pulse avalanche energy
Storage temperature
– 55 to 175
Max. operating junction temperature
°C
120
110
480
300
2
TBD
75
± 20
160
110
640
H²PAK
V
V
A
A
A
W
W/°C
mJ
Unit
1. Pulse width limited by safe operating area
2. Starting T
j
= 25 °C, I
D
= 75 A, V
DD
= 45 V
Table 3.
Symbol
Thermal data
Value
Parameter
TO-220
H²PAK
0.5
35
(1)
62.5
300
°C/W
°C/W
°C/W
°C
Unit
R
thj-case
Thermal resistance junction-case max
R
thj-pcb
R
thj-a
T
l
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Doc ID 15211 Rev 3
3/12
Electrical characteristics
STH155N75F4-2, STP155N75F4
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= max rating
V
DS
= max rating,T
C
=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 60 A
(1)
V
GS
= 10 V, I
D
= 80 A
(2)
2
5
4.2
Min.
75
1
100
100
4
5.8
5.2
Typ.
Max.
Unit
V
µA
µA
nA
V
mΩ
mΩ
1. For TO-220
2. For H²PAK
Table 5.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
Test conditions
Min.
Typ.
TBD
TBD
TBD
V
DD
= 60 V, I
D
= 155 A,
V
GS
= 10 V
(see Figure 3)
140
-
TBD
TBD
-
-
Max.
Unit
pF
pF
pF
nC
nC
nC
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DD
= 60 V, I
D
= 75 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see Figure 2)
V
DD
= 60 V, I
D
= 75 A
R
G
= 4.7
Ω,
V
GS
= 10 V
(see Figure 2)
Min.
Typ.
TBD
TBD
TBD
TBD
Max.
Unit
ns
ns
ns
ns
-
-
-
-
4/12
Doc ID 15211 Rev 3
STH155N75F4-2, STP155N75F4
Table 7.
Symbol
I
SD
I
SDM (1)
I
SD
I
SDM (2)
V
SD
(3)
Electrical characteristics
Source drain diode
Parameter
Source-drain current
TO-220
Source-drain current (pulsed)
Source-drain current
H²PAK
Source-drain current (pulsed)
Forward on voltage
I
SD
= 120 A, V
GS
= 0
(4)
I
SD
= 160 A, V
GS
= 0
(5)
I
SD
= 75 A, V
DD
= 25 V
di/dt = 100 A/µs,
T
j
= 150 °C
(see Figure 4)
-
-
TBD
TBD
TBD
-
640
1.5
1.5
A
V
V
ns
nC
A
-
480
160
A
A
Test conditions
Min.
Typ.
Max
120
Unit
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
1. Pulse width limited by safe operating area.
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4. For TO-220
5. For H²PAK
Doc ID 15211 Rev 3
5/12
