S T M8455
S amHop Microelectronics C orp.
Aug.16,2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y
(N-C hannel)
V
DS S
40V
P R ODUC T S UMMAR Y
(P -C hannel)
V
DS S
-40V
I
D
6A
R
DS (ON) ( m
W
)
Max
I
D
-5A
R
DS (ON) ( m
W
)
Max
29 @ V
G S
= 10V
40 @ V
G S
= 4.5V
D
1
8
42 @ V
G S
= -10V
62 @ V
G S
= -4.5V
D
1
7
D
2
6
D
2
5
S O-8
1
1
2
3
4
S
1
G
1
S
2
G
2
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
-P ulsed
b
a
S ymbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
N-C hannel P-C hannel
40
20
6
5.1
28
1.7
2
1.44
-55 to 150
-40
20
-5
-4.2
-20
-1.7
Unit
V
V
A
A
A
A
W
C
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
a
Ta= 25 C
Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
1
62.5
C /W
S T M8455
N-Channel ELECTRICAL CHARACTERISTICS (TA
=
25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 32V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 5A
V
GS
=4.5V, I
D
=4A
V
DS
= 5V, V
GS
= 10V
V
DS
= 5V, I
D
= 5A
Min Typ
C
Max Unit
40
1
V
uA
100 nA
1.0
1.8
23
30
20
15
890
115
65
3.0
29
40
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=20V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
2
V
DD
= 20V
I
D
= 5 A
V
GS
= 10V
R
GE N
= 3.3 ohm
V
DS
=24V, I
D
=5A,V
GS
=10V
V
DS
=24V, I
D
=5A,V
GS
=4.5V
V
DS
=24V, I
D
= 5 A
V
GS
=4.5V
16
12
30
8
17
8.5
2.2
4.3
ns
ns
ns
ns
nC
nC
nC
nC
S T M8455
P-Channel ELECTRICAL CHARACTERISTICS (TA
=
25 C unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
S ymbol
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -32V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250uA
V
GS
=-10V, I
D
= -4A
V
GS
= -4.5V, I
D
= -3A
V
DS
=-5V, V
GS
= -10V
V
DS
= -5V, I
D
= - 4A
Min Typ
C
Max Unit
-40
-1
V
uA
100 nA
-1.0 -1.8
35
50
16
10
900
140
85
-3.0
42
V
m ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
62
m ohm
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C
IS S
C
OS S
C
RSS
c
V
DS
=-20V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
D
= -20V
I
D
= -4A
V
GE N
= -10V
R
GE N
= 3.3 ohm
V
DS
=-24V,I
D
=-4A,V
GS
=-10V
V
DS
=-24V,I
D
=-4A,V
GS
=-4.5V
V
DS
=-24V, I
D
= - 4A
V
GS
=-4.5V
3
12
16
55
30
17.6
8.8
1.8
5
ns
ns
ns
ns
nC
nC
nC
nC
S T M8455
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
V
GS
= 0V, Is =-1.7A
N-Ch
P-Ch
Min Typ Max Unit
0.8
-0.77
1.3
-1.3
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
15
V
G S
=4.5V
15
12
I
D
, Drain C urrent(A)
V
G S
=8V
V
G S
=10V
12
9
I
D
, Drain C urrent (A)
V
G S
=3.5V
9
6
T j=125 C
3
0
-55 C
25 C
0
0.8
1.6
2.4
3.2
4.0
4.8
6
3
V
G S
=3V
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
45
2.0
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
40
1.8
1.6
1.4
1.2
1.0
0
V
G S
=4.5V
I
D
=4A
V
G S
=10V
I
D
=5A
R
DS (on)
(m
W
)
35
30
25
V
G S
=4.5V
V
G S
=10V
20
1
1
3
6
9
12
15
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
4
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
S T M8455
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
120
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
I
D
=5A
Is , S ource-drain current (A)
100
10.0
5.0
25 C
75 C
125 C
R
DS (on)
(m
W
)
80
60
125 C
40
20
0
75 C
25 C
1.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
V
G S
, G ate-S ource Voltage (V )
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
