S T U309D
S amHop Microelectronics C orp.
Nov 22 2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y
(N-C hannel)
V
DS S
30V
P R ODUC T S UMMAR Y
(P -C hannel)
V
DS S
-30V
I
D
18A
R
DS (ON) ( m
Ω
)
Max
I
D
-14A
R
DS (ON) ( m
Ω
)
Max
23 @ V
G S
= 10V
35 @ V
G S
= 4.5V
D
1
35 @ V
G S
= -10V
55 @ V
G S
= -4.5V
D
2
D1/D2
G
1
G
2
S1
G1
S2
G2
TO-252-4L
S
1
N-ch
S
2
P -ch
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Tc
-P ulsed
a
S ymbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
Tc= 25 C
P
D
Tc= 70 C
N-C hannel P-C hannel
30
20
18
15
50
10
11
7.7
-30
20
-14
-12
-50
-6
Unit
V
V
A
A
A
A
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
W
C
T
J
, T
S TG
-55 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
1
R
JC
R
JA
13.6
120
C /W
C /W
S T U309D
N-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
b
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 10A
V
GS
=4.5V, I
D
= 8A
V
DS
= 5V, V
GS
= 4.5V
V
DS
= 10V, I
D
= 10A
Min Typ
C
Max Unit
30
1
10
1
1.8
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
uA
uA
V
m ohm
m ohm
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
3
23
35
17
23
20
15
640
180
110
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= 15V
I
D
= 1 A
V
GS
= 10V
R
GE N
= 6 ohm
V
DS
=15V, I
D
=20A,V
GS
=10V
V
DS
=15V, I
D
=20A,V
GS
=4.5V
Gate-S ource Charge
Gate-Drain Charge
Q
gs
Q
gd
V
DS
=15V, I
D
= 20 A
V
GS
=10V
2
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
b
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
0.5
13
12
40
7
13
6.8
1.5
3.5
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
ns
ns
ns
ns
nC
nC
nC
nC
S T U309D
P-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
b
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250uA
V
GS
=-10V, I
D
= -6A
V
GS
=-4.5V, I
D
= -4A
V
DS
= -5V, V
GS
= -10V
V
DS
= -10V, I
D
= -6A
Min Typ
C
Max Unit
-30
-1
10
-1
-1.9
28
44
-20
10
850
220
130
4
12
15
75
35
16
8
1.6
4.7
-3
35
55
V
uA
uA
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
b
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= -15V
I
D
= -1A
V
GS
= -10V
R
GE N
= 6 ohm
V
DS
=-15V,I
D
=-20A,V
GS
=-10V
V
DS
=-15V,I
D
=-20A,V
GS
=-4.5V
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V, I
D
= -20 A
V
GS
=-10V
3
S T U309D
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =10A
V
GS
= 0V, Is =-6A
N-Ch
P-Ch
Min Typ Max Unit
0.9
-0.9
1.3
-1.3
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
V
Notes
a.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.
b.Guaranteed by design,not subject to production testing.
N-Channel
48
V
G S
=4.5V
40
16
20
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
V
G S
=8V
32
V
G S
=10V
-55 C
12
T j=125 C
8
25 C
4
0
24
16
8
0
V
G S
=3.5V
V
G S
=3V
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
30
1.5
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
25
V
G S
=4.5V
1.4
1.3
1.2
1.1
1.0
0.0
V
G S
=4.5V
I
D
=8A
V
G S
=10V
I
D
=10A
R
DS (on)
(m
Ω
)
20
15
V
G S
=10V
10
5
0
1
6
12
18
24
30
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
4
S T U309D
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.20
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75
100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
60
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
I
D
=10A
Is , S ource-drain current (A)
50
10.0
125 C
R
DS (on)
(m
Ω
)
40
125 C
30
75 C
20
10
0
25 C
25 C
75 C
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
V
G S
, G ate- S ource Voltage (V )
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
微控制器 MCU
