N-CHANNEL 400V - 0.19
Ω
- 18.4 A TO-247/ISOWATT218
PowerMesh™ MOSFET
TYPE
STW18NB40
STH18NB40FI
s
s
s
s
s
STW18NB40
STH18NB40FI
PRELIMINARY DATA
V
DSS
400 V
400 V
R
DS(on)
< 0.26
Ω
< 0.26
Ω
I
D
18.4 A
12.4 A
TYPICAL R
DS
(on) = 0.19
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
TO-247
3
2
1
3
2
1
ISOWATT218
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
STW18NB40
400
400
±30
18.4
11.6
73.6
190
1.52
4.5
-
–65 to 150
150
(1)I
SD
<18.4A, di/dt<200A/µ, V
DD
<V
(BR)DSS
,TJ<T
JMAX
Unit
V
V
V
12.4
7.8
73.6
80
0.64
4.5
2000
A
A
A
W
W/°C
V/ns
V
°C
°C
STH18NB40FI
(•)Pulse width limited by safe operating area
June 2002
1/7
STW18NB40/STH18NB40FI
THERMAL DATA
TO-247
Rthj-case
Rthj-amb
Rthc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
ISOWATT218
1.56
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
18.4
450
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ±30V
Min.
400
1
50
±100
Typ.
Max.
Unit
V
µA
µA
nA
ON (1)
Symbol
V
GS(th)
R
DS(on)
I
D(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10V, I
D
= 6.2 A
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
18.4
Min.
3
Typ.
4
0.19
Max.
5
0.26
Unit
V
Ω
A
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9.2 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
9.3
2480
435
47
Max.
Unit
S
pF
pF
pF
2/7
STW18NB40/STH18NB40FI
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 200 V, I
D
= 9.2 A
R
G
= 4.7Ω V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 320V, I
D
= 18.4 A,
V
GS
= 10V
Min.
Typ.
27
14
60
16
28.3
84
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 320V, I
D
= 18.4 A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
13
15
27
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 18.4 A, V
GS
= 0
I
SD
= 18.4 A, di/dt = 100A/µs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
480
5.5
23
Test Conditions
Min.
Typ.
Max.
18.4
73.6
1.6
Unit
A
A
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/7
STW18NB40/STH18NB40FI
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuit For
Resistive Load
Fig. 4:
Gate Charge test Circuit
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/7
STW18NB40/STH18NB40FI
TO-247 MECHANICAL DATA
mm.
MIN.
4.85
2.20
0.40
1
3
2
2
3
10.90
15.45
19.85
3.70
18.50
14.20
34.60
5.50
2
5º
60º
3.55
3.65
0.14
3
0.07
5º
60º
0.143
14.80
0.56
1.36
0.21
0.11
15.75
20.15
4.30
0.60
0.78
0.14
0.72
0.58
2.40
3.40
0.07
0.11
0.43
0.62
0.79
0.17
TYP
MAX.
5.15
2.60
0.80
1.40
MIN.
0.19
0.08
0.015
0.04
0.11
0.07
0.09
0.13
inch
TYP.
MAX.
0.20
0.10
0.03
0.05
DIM.
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
Dia
5/7
