STP21NM60N-F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17
Ω
- 17 A TO-220 - TO-220FP - D
2
PAK -
I
2
PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
Type
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
V
DSS
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
R
DS(on)
max
< 0.22
Ω
< 0.22
Ω
< 0.22
Ω
< 0.22
Ω
< 0.22
Ω
I
D
3
3
3
1
2
17 A
17 A
17 A
(1)
17 A
17 A
1
2
TO-220
TO-220FP
1. Limited by maximum temperature allowed
■
■
■
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
■
Switching applications
Description
bs
O
This series of devices implements the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
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Figure 1.
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3
12
I
2
PAK
ro
P
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1
s)
t(
D
2
PAK
3
1
TO-247
Internal schematic diagram
Table 1.
Device summary
Marking
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
Package
D
2
PAK
I
2
PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
Order codes
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
February 2008
Rev 7
1/18
www.st.com
18
Contents
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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2/18
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
TO-220/D
2
PAK
I
2
PAK / TO-247
600
±25
17
10
68
140
17
(1)
10
(1)
Unit
TO-220FP
V
V
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
V
ISO
T
stg
T
j
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T
C
= 25 °C)
Storage temperature
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
I
SD
≤
17 A, di/dt
≤
480 A/µs, V
DD
= 80% V
(BR)DSS
Table 3.
Symbol
bs
O
et
l
o
R
thj-case
R
thj-pcb
ro
P
e
T
l
Thermal data
Parameter
TO-220 D²PAK I²PAK
0.89
--
62.5
30
--
300
--
62.5
TO-220FP TO-247
4.21
--
0.89
--
50
Unit
°C/W
°C/W
°C/W
°C
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15
d
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68
(1)
30
uc
s)
t(
A
A
A
W
V/ns
V
°C
°C
--
–55 to 150
150
2500
Thermal resistance junction-
case max
Thermal resistance junction-
pcb max
Thermal resistance junction-
ambient max
Maximum lead temperature
for soldering purpose
R
thj-amb
Table 4.
Symbol
I
AS
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
Max value
8.5
610
Unit
A
mJ
3/18
Electrical characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Value
Parameter
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
Typ.
Max.
V
48
Unit
V
(BR)DSS
dv/dt
(1)
I
DSS
I
GSS
V
GS(th)
R
DS(on)
I
D
= 1 mA, V
GS
= 0
V
DD
= 480 V, I
D
= 17 A,
V
GS
= 10 V
V
DS
= Max rating
V
DS
= Max rating @125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 8.5 A
600
1. Characteristic value at turn off on inductive load
Table 6.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
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t(
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s
b
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P
2
d
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uc
1
100
s)
t(
4
V/ns
µA
µA
100
nA
V
Ω
3
0.170
0.220
Test conditions
V
DS
= 15 V
,
I
D
= 8.5 A
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
12
1900
110
15
282
22
15
84
31
66
10
33
2
Max.
Unit
S
pF
pF
pF
C
oss eq.(2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
V
GS
= 0, V
DS
= 0 to 480 V
V
DD
= 300 V, I
D
= 8.5 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see Figure 23),
(see Figure 18)
V
DD
= 480 V, I
D
= 17 A,
V
GS
= 10 V,
(see Figure 19)
f=1 MHz Gate DC Bias = 0
test signal level = 20 mV
open drain
pF
ns
ns
ns
ns
nC
nC
nC
Ω
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/18
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
Table 7.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 17 A, V
GS
= 0
I
SD
= 17 A, V
DD
= 100 V
di/dt=100 A/µs
(see Figure 20)
I
SD
= 17 A,V
DD
= 100 V
di/dt=100 A/µs,
T
j
= 150 °C
(see Figure 20)
372
4.6
25
486
6.3
26
Test conditions
Min.
Typ.
Max.
17
68
1.5
Unit
A
A
V
ns
µC
A
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
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µC
A
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