* Pb containing terminations are not RoHS compliant, exemptions may apply.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
R
thJL
Typical
17
50
2.5
5
Maximum
20
60
3
6
°C/W
Unit
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD35N05-26L
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
b
Symbol
V
BR
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
c
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 44 V, V
GS
= 0 V
V
DS
= 44 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
=5 V, V
GS
= 5 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 10 A, T
J
= 125 °C
V
GS
= 4.5 V, I
D
= 15 A
Min.
55
1
Typ
a
Max.
Unit
V
± 100
1
50
nA
µA
A
0.0165
0.0215
25
885
0.0200
0.0350
0.0260
S
35
Drain-Source On-State Resistance
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Continuous Current
Pulsed Current
Diode Forward Voltage
b
c
V
DS
= 15 V, I
D
= 20 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
185
80
10.5
13
pF
V
DS
= 25 V, V
GS
= 5 V, I
D
= 35 A
4
4.8
5
8
30
30
150
35
80
nC
Turn-On Delay Time
c
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
V
DD
= 25 V, R
L
= 0.3
I
D
35 A, V
GEN
= 10 V, R
G
= 2.5
18
20
100
ns
Source-Drain Diode Ratings and Characteristic
(T
C
= 25 °C)
A
V
ns
I
F
= 80 A, V
GS
= 0 V
I
F
= 35 A, di/dt = 100 A/µs
25
1.5
40
Source-Drain Reverse Recovery Time
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD35N05-26L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
V
GS
= 10 thru 6 V
80
I
D
- Drain Current (A)
5V
I
D
- Drain Current (A)
80
25 °C
60
125 °C
100
T
C
= - 55 °C
60
4V
40
40
20
2V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
3V
20
0
0
1
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
2
7
8
Output Characteristics
60
T
C
= - 55 °C
50
g fs - Transconductance (S)
0.03
40
25 °C
125 °C
R
DS(on)
-
0.04
Transfer Characteristics
V
GS
= 4.5 V
V
GS
= 10 V
0.02
30
20
0.01
10
0
0
20
40
60
I
D
- Drain Current (A)
80
100
0.00
0
20
40
60
I
D
- Drain Current (A)
80
100
Transconductance
1500
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
1200
C - Capacitance (pF)
C
iss
900
16
V
DS
= 25 V
I
D
= 35 A
12
600
8
300
C
oss
C
rss
0
11
22
33
44
V
DS
- Drain-to-Source Voltage (V)
55
4
0
0
0
10
20
30
40
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD35N05-26L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 20 A
1.6
I
S
- Source Current (A)
100
1.2
T
J
= 175 °C
10
T
J
= 25 °C
0.8
0.4
0.0
- 50
1
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
40
500
Limited
by R
DS(on)
*
100
I
D
- Drain Current (A)
30
I
D
- Drain Current (A)
10 µs
100 µs
10
10 ms
100 ms
1
T
C
= 25 °C
Single Pulse
1s
DC
20
10
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
175
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Max. Avalanche and Drain Current vs. Case Temperature
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71443.
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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