d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
www.vishay.com
1
SUM110P04-05
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 20 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 20 A
- 0.8
70
130
37
33
T
C
= 25 °C
- 110
- 240
- 1.5
105
200
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 20 V, R
L
= 0.18
Ω
I
D
≅
- 110 A, V
GEN
= - 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 110 A
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
11300
1510
1000
185
48
42
4.0
25
290
110
35
40
440
165
55
ns
Ω
280
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 40 V, V
GS
= 0 V
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 20 A
V
DS
= - 15 V, I
D
= - 20 A
- 120
0.0041
75
0.005
-2
- 40
- 40
- 5.5
-3
-4
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
