• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Top View
G
D
S
APPLICATIONS
• Power supply
- Secondary synchronous rectification
D
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 7.5 V
Q
g
typ. (nC)
I
D
(A)
Configuration
60
0.00200
0.00250
141
150
d
Single
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
• OR-ing / e-fuse
N-Channel MOSFET
S
G
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-220
SUP50010E-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
Avalanche current
Single avalanche energy
a
Maximum power dissipation
a
Operating junction and storage temperature range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
150
d
150
d
500
60
180
375
b
UNIT
V
A
mJ
W
°C
125
b
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient (PCB mount)
c
Junction-to-case (drain)
Notes
a. Duty cycle
1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
SYMBOL
R
thJA
R
thJC
LIMIT
40
0.4
UNIT
°C/W
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79578
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP50010E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
Zero gate voltage drain current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
c
Gate-source charge
c
Gate-drain charge
c
Output charge
Gate resistance
Turn-on delay time
c
Rise time
c
Turn-off delay time
c
Fall time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 3
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 20 A
V
GS
= 0 V, V
DS
= 30 V, f = 1 MHz
-
-
-
-
-
-
-
0.24
-
-
-
-
10 895
2420
85
141
43.6
19.1
143
1.2
28
12
50
13
-
-
-
212
-
-
215
2.4
56
24
100
26
ns
nC
pF
I
D(on)
R
DS(on)
g
fs
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 30 A
60
2
-
-
-
-
120
-
-
-
-
-
-
-
-
-
-
0.00166
0.00208
120
-
4
± 250
1
150
5
-
0.00200
0.00250
-
V
nA
μA
mA
A
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed current (t = 100 μs)
Forward voltage
a
Reverse recovery time
Peak reverse recovery charge
Reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
t
a
t
b
I
F
= 34 A, di/dt = 100 A/μs
I
F
= 10 A, V
GS
= 0 V
-
-
-
-
-
-
-
-
0.8
75
2.8
0.12
38
37
250
1.5
150
5.6
0.24
-
-
A
V
ns
A
μC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79578
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP50010E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
200
V
GS
= 10 V thru 6 V
Vishay Siliconix
Axis Title
10000
100
10000
80
2nd line
I
D
- Drain Current (A)
V
GS
= 5 V
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
150
1000
1st line
2nd line
100
20
T
C
= 25 °C
T
C
= 125 °C
T
C
= -55 °C
60
100
100
50
V
GS
= 4 V
40
0
0
1.0
2.0
3.0
4.0
5.0
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1.6
3.2
4.8
6.4
8
V
GS
- Gate-to-Source Voltage (V)
10
Output Characteristics
Transfer Characteristics
Axis Title
150
T
C
= -55 °C
T
C
= 25 °C
Axis Title
10000
0.004
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
g
fs
- Transconductance (S)
120
0.003
1000
0.002
V
GS
= 10 V
T
C
= 125 °C
1000
1st line
2nd line
60
100
30
100
0.001
0
0
10
20
30
40
50
60
I
D
- Drain Current (A)
10
0
0
50
100
150
200
I
D
- Drain Current (A)
10
Transconductance
On-Resistance vs. Drain Current
Axis Title
10 000
10000
C
iss
Axis Title
10
I
D
= 20 A
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
8
1000
1st line
2nd line
100
2
10
0
30
60
90
120
150
Q
g
- Total Gate Charge (nC)
6
2nd line
C - Capacitance (pF)
1000
C
oss
1000
1st line
2nd line
100
C
rss
4
V
DS
= 15 V, 30 V, 48 V
100
10
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
10
0
Capacitance
Gate Charge
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79578
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
90
V
GS
= 7.5 V
SUP50010E
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
1.8
2nd line
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V, 30 A
Vishay Siliconix
Axis Title
10000
100
10000
1000
1st line
2nd line
1.2
V
GS
= 7.5 V, 20 A
2nd line
I
S
- Source Current (A)
1.5
10
1st line
2nd line
100
0.1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
10000
I
D
= 250 μA
T
J
= 150 °C
1000
T
J
= 25 °C
1
100
0.9
0.6
-50 -25
0
25
50
10
75 100 125 150 175
0.01
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.006
I
D
= 30 A
Axis Title
10000
3.7
0.005
2nd line
R
DS(on)
- On-Resistance (Ω)
0.004
T
J
= 125 °C
1000
1st line
2nd line
2nd line
V
GS(th)
(V)
3.1
1000
2.5
100
1.9
1st line
2nd line
10
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
0.003
0.002
T
J
= 25 °C
100
0.001
0
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
10
1.3
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
70
I
D
= 250 μA
Axis Title
10000
375
10000
2nd line
V
DS
- Drain-to-Source Voltage (V)
68
1000
1st line
2nd line
66
2nd line
I
D
- Drain Current (A)
300
1000
1st line
2nd line
Package limited
75
100
10
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
225
64
100
62
150
60
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
10
0
Drain Source Breakdown vs. Junction Temperature
Current De-rating
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79578
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP50010E
www.vishay.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
1000
I
DM
limited
Vishay Siliconix
10000
2nd line
I
DAV
- Drain Current Avalanche (A)
100
2nd line
I
D
- Drain Current (A)
100 μs
100
Limited by R
DS(on)
a
1000
1st line
2nd line
25 °C
150 °C
1 ms
10
10 ms
100
DC, 10 s,
1 s, 100 ms
T
C
= 25 °C,
single pulse
BVDSS limited
1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
10
10
0.00001
0.0001
0.001
0.01
t - Time (s)
Safe Operating Area
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
Single Pulse Avalanche Current Capability vs. Time
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual pplication parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?79578.
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79578
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
