Complete solution for high quality, high frequency
crystal oscillator applications
s
Internal 75K Ohm input pull-down resistors
s
Available in both 8 and 16-pin SOIC package; 8 and
10-pin (3mm) MSOP and in DIE form
SY10EL16VA-VF
SY100EL16VA-VF
DESCRIPTION
The SY10/100EL16VA-VF are differential receivers.
The devices are equivalent to SY10/100EL16 or SY10/
100EL16V with enhanced capabilities. The Q
HG
, /Q
HG
outputs have a DC gain several times larger than the DC
gain of the Q output.
The SY10/100EL16VA have an identical pinout to the
SY10/100EL16 or SY10/100EL16V. It provides a V
BB
output for either single-ended application or as a DC
bias for AC coupling to the device.
The SY10/100EL16VB are very similar to the SY10/
100EL16VA. The /Q output is provided for feedback
purposes.
The SY10/100EL16VC provides an /EN input which is
synchronized with the data input (D) signal in a way that
provides glitchless gating of the Q
HG
and /Q
HG
outputs. When
the /EN signal is LOW, the input is passed to the outputs and
the data output equals the data input. When the data input is
HIGH and the /EN goes HIGH, it will force the Q
HG
LOW and
the /Q
HG
HIGH on the next negative transition of the data
input. If the data input is LOW when the /EN goes HIGH, the
next data transition to a HIGH is ignored and Q
HG
remains
LOW and /Q
HG
remains HIGH. The next positive transition of
the data input is not passed on to the data outputs under these
conditions. The Q
HG
and /Q
HG
outputs remain in their dis-
abled state as long as the /EN input is held HIGH. The /EN
input has no influence on the /Q output and the data input is
passed on (inverted) to this output whether /EN is HIGH or
LOW. This configuration is ideal for crystal oscillator applica-
tions, where the oscillator can be free running and gated on
and off synchronously without adding extra counts to the
output.
The SY10/100EL16VD provides the flexibility of all the
combinations in DIE form, in 16-pin 150mil SOIC package or
in 10-pin MSOP package. The 16-pin SOIC and 10-pin MSOP
packages are ideal for prototyping DIE applications.
The SY10/100EL16VE are similar to the SY10/100EL16VB
where the Q, /Q output is made available differently. In this
package option, V
BB
is no longer provided.
The SY10/100EL16VF are similar to the SY10/100EL16VC,
offering the D, /D inputs rather than the V
BB
output.
PIN NAMES
Pin
D
Q
Q
HG
V
BB
/EN
Data Inputs
Data Outputs
Data Outputs w/High Gain
Reference Voltage Output
Enable Input
Function
TRUTH TABLE
/EN
0
1
Data
Logic Low
QHG Output
Rev.: L
Amendment: /1
1
Issue Date: July 2000
Micrel
SY10EL16VA-VF
SY100EL16VA-VF
PIN CONFIGURATION/BLOCK DIAGRAM
NC
D
/D
V
BB
1
8
V
CC
Q
HG
/Q
HG
V
EE
2
7
3
6
4
5
SY10/100EL16VA
5V/3.3V Differential Receiver w/High Gain
(Available in 8-pin SOIC or 8-pin MSOP)
Q
/Q
D
1
8
V
CC
Q
HG
/Q
HG
V
EE
2
7
3
6
Q
/Q
D
/D
D
V
BB
1
8
V
CC
Q
HG
/Q
HG
V
EE
/D
4
5
2
7
SY10/100EL16VE
EL16VB w/Differential Q, QB output (no V
BB
)
(Available in 8-pin SOIC or 8-pin MSOP)
3
6
4
5
SY10/100EL16VB
EL16VA w/Extra QB output
(Available in 8-pin SOIC or 8-pin MSOP)
/Q
D
/D
/EN
1
2
3
LEN Q
BB
8
7
6
OE
LATCH
V
CC
Q
HG
/Q
HG
V
EE
4
D
5
/Q
D
V
BB
/EN
1
2
3
LEN Q
V
BB
OE
8
7
6
LATCH
V
CC
Q
HG
/Q
HG
V
EE
SY10/100EL16VF
EL16VC w/Differential Data Input
(Available in 8-pin SOIC or 8-pin MSOP)
4
D
5
SY10/100EL16VC
EL16VB w/Enable Input
(Available in 8-pin SOIC or 8-pin MSOP)
2
Micrel
SY10EL16VA-VF
SY100EL16VA-VF
PIN CONFIGURATION/BLOCK DIAGRAM
NC
Q
/Q
D
Q
/Q
D
/D
VBB
1
2
3
4
5
10 VCC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
V
CC
Q
HG
/Q
HG
V
EE
/EN
NC
NC
/D
9
QHG
SOIC
Z16-2
V
BB
MSOP
K10-1
8
7
6
/QHG
NC
VEE
NC
/EN
SY10/100EL16VDKC
EL16VDXC packaged in 10-pin MSOP
SY10/100EL16VDZC
EL16VDXC packaged in 16-pin SOIC
DIE LAYOUT
All options in DIE form w/Extra Q output and V
BB
output
Die Size (mils) 39. X 52. X 14.5
Q
V
CC
/Q
Q
HG
D
OE
/D
LEN Q
LATCH
D
V
BB
V
BB
/Q
HG
/EN
V
EE
SY10/100EL16VDXC
DIE
TOP VIEW
3
Micrel
SY10EL16VA-VF
SY100EL16VA-VF
DC ELECTRICAL CHARACTERISTICS
(1)
V
EE
= V
EE
(Min) to V
EE
(Max), V
CC
= GND
T
A =
–40
°
C
Symbol
I
EE
Parameter
Power Supply
Current
10EL
100EL
Min.
—
—
–1.43
–1.38
—
Typ.
—
—
—
—
—
Max.
40
40
Min.
—
—
T
A =
0
°
C
Typ.
—
—
—
—
—
Max.
40
40
T
A =
+25
°
C
Min.
—
—
Typ.
—
—
—
—
—
Max.
40
40
Min.
—
—
T
A =
+85
°
C
Typ.
—
—
—
—
—
Max.
40
46
V
–1.30 –1.38
–1.26 –1.38
150
—
–1.27 –1.35
–1.26 –1.38
150
—
–1.25 –1.31
–1.26 –1.38
150
—
–1.19
–1.26
150
µA
Unit
mA
V
BB
Output Reference
Voltage
10EL
100EL
Input HIGH Current
I
IH
NOTE:
1. Parametric values specified at:
10/100EL16VA-VF Series:
-3.0V to -5.5V.
AC ELECTRICAL CHARACTERISTICS
(4)
V
EE
= V
EE
(Min) to V
EE
(Max), V
CC
= GND
T
A =
–40
°
C
Symbol
t
PLH
t
PHL
Parameter
Propagation Delay to
Q, /Q Output
D (Diff)
D (SE)
Q
HG
, /Q
HG
Output
D (Diff)
D (SE)
Setup Time
Hold Time
Duty Cycle Skew
(1)
(Diff)
V
PP
V
CMR
tr
tf
Minimum Input Swing
(2)
—
150
5
—
—
225
—
—
–0.4
350
—
150
–1.4
100
5
—
—
225
20
—
–0.4
350
—
150
–1.4
100
5
—
—
225
20
—
–0.4
350
—
150
–1.4
100
5
—
—
225
20
—
–0.4
350
ps
mV
V
ps
/EN
/EN
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
150
150
Max.
350
400
650
700
—
—
Min.
—
—
—
—
—
—
T
A =
0
°
C
Typ.
—
—
—
—
150
150
Max.
350
400
650
700
—
—
T
A =
+25
°
C
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
150
150
Max.
350
400
650
700
—
—
T
A =
+85
°
C
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
150
150
Max. Unit
ps
380
430
730
780
—
—
ps
ps
t
S
t
H
t
skew
Common Mode Range
(3)
–1.3
Output Q
Rise/Fall Time
(20% TO 80%)
100
NOTES:
1. Duty cycle skew is the difference between a t
PLH
and t
PHL
propagation delay through a device.
2. Minimum input swing for which AC parameters are guaranteed. The device has a DC gain of
≈
40 to Q, /Q outputs and a DC gain of
≈
200 or higher to
/Q
HG
/Q
HG
outputs.
3. The CMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified
range and the peak-to-peak voltage lies between V
PP
min. and 1V. The lower end of the CMR range varies 1:1 with V
