WESTCODE
Date:- 10 Mar, 2003
Data Sheet Issue:- 2
An IXYS Company
Provisional data
Insulated Gate Bi-Polar Transistor
Type T0500NA25E
(Development Type Number: TX044NA25E)
Absolute Maximum Ratings
VOLTAGE RATINGS
V
CES
V
DC link
V
GES
Collector – emitter voltage
Permanent DC voltage for FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
RATINGS
I
C(DC)
I
CRM
I
ECO
P
MAX
T
j
T
stg
Continuous DC collector current, IGBT (Note 2).
Repetitive peak collector current, t
p
=1ms, IGBT.
Maximum reverse emitter current, t
p
=1ms (note 4).
Maximum power dissipation, IGBT (note 3).
Operating temperature range.
Storage temperature range.
MAXIMUM
LIMITS
605
1000
500
2.6
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Notes: -
1) Unless otherwise indicated T
j
= 125ºC.
2) T
sink
= 55°C, double side cooled.
3) T
sink
= 25°C, double side cooled.
4) The use of an anti-parallel diode is recommended.
Provisional Data Sheet T0500NA25E Issue 2
Page 1 of 7
March, 2003
WESTCODE
An IXYS Company
Characteristics
IGBT Characteristics
PARAMETER
V
CE(sat)
V
To
r
T
V
ECO
V
GE(TH)
I
CES
I
GES
C
ies
t
d(on)
t
r
(I)
Q
g(on)
E
on
t
d(off)
t
f
Q
g(off)
E
off
Collector – emitter saturation voltage
Threshold voltage
Slope resistance
Reverse avalanche voltage
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Insulated Gate Bi-polar Transistor Type T0500NA25E
MIN
-
-
-
-
-
6
-
-
-
-
-
-
-
-
-
-
-
TYP
2.4
2.75
-
-
22
7.5
2
-
82
2.3
2.0
-
0.8
1.6
2.5
-
0.5
MAX
2.7
3.3
1.57
2.35
-
9
7
±3.5
-
-
-
15
-
-
-
38
-
TEST CONDITIONS
I
C
= 500A, V
GE
= 15V, T
j
= 25°C
I
C
= 500A, V
GE
= 15V
Current range: 300 – 650A
I
ECO
= 200A
V
CE
= V
GE
, I
C
= 200mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= ±20V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
UNITS
V
V
V
mΩ
V
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
I
C
=500A, V
CE
= 0.5V
CES
,
V
GE
= ±20V,
R
g(ON)
= 20Ω,
R
g(OFF)
=15Ω,
Snubber : 10Ω and 0.22µF in series
Thermal Characteristics
PARAMETER
R
th(j-hs)
F
W
t
Thermal impedance junction to sink, IGBT
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
MIN
-
-
-
8
-
TYP
-
-
-
-
0.5
MAX
38.6
58.6
112
12
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
UNITS
K/kW
K/kW
K/kW
kN
kg
Provisional Data Sheet T0500NA25E Issue 2
Page 2 of 7
March, 2003
WESTCODE
An IXYS Company
Curves
Figure 1 – Typical and maximum collector-emitter
saturation voltage characteristics
1000
V
GE
=+15V
T
j
=25°C
T
j
=125°C
Insulated Gate Bi-polar Transistor Type T0500NA25E
Figure 2 – Typical output characteristic at 25°C
800
600
100
Collector current - I
C
(A)
Collector current - I
C
(A)
400
V
GE
=20V
V
GE
=18V
V
GE
=17V
V
GE
=15V
V
GE
=13V
V
GE
=12V
200
T0500NA25E
issue 2
10
0
1
2
3
4
5
Collector to emitter saturation voltage - V
CE(sat)
(V)
T0500NA25E
issue 2
0
0
1
2
3
4
5
V
CE(sat)
(V)
Figure 3 – Typical output characteristic at 125°C
800
Figure 4 – Typical turn-on gate charge
16
V
CE
=1250V
V
GE
=±15V
T
j
=125°C
14
600
12
I
C
=500A
Collector current - I
C
(A
)
400
V
GE
=20V
V
GE
=18V
V
GE
=17V
V
GE
=15V
V
GE
=13V
V
GE
=12V
Gate charge - Q
g(on)
(µC)
10
I
C
=300A
8
200
6
T0500NA25E
issue 2
0
0
1
2
3
4
5
4
10
20
30
40
T0500NA25E
issue 2
50
60
V
CE(sat)
(V)
Ω
Gate resistance - R
G(on)
(Ω)
Provisional Data Sheet T0500NA25E Issue 2
Page 3 of 7
March, 2003
WESTCODE
An IXYS Company
Figure 5 – Typical turn-off gate charge
40
V
CE
=1250V
V
GE
=±15V
T
j
=125°C
Insulated Gate Bi-polar Transistor Type T0500NA25E
Figure 6 – Typical turn-on delay time vs gate
resistance
8
V
CE
=1250V
V
GE
=±15V
T
j
=125°C
7
I
C
=500A
35
I
C
=500A
6
Turn-on delay time - t
d(on)
(µs)
Gate charge - Q
g(off)
(µC)
5
I
C
=300A
30
I
C
=300A
4
3
25
2
1
T0500NA25E
issue 2
20
10
20
30
40
Gate resistance - R
G(off)
(Ω)
Ω
0
10
20
30
40
50
60
Gate resistance - R
G(on)
(Ω)
Ω
T0500NA25E
issue 2
Figure 7 – Typical turn-off delay time vs. gate Figure 8 – Typical turn-on energy vs. collector
current
resistance
4
V
CE
=1250V
V
GE
=±15V
T
j
=125°C
1000
R
G(on)
=20
Ω
V
GE
=±15V
T
j
=125°C
V
CE
=1250V
800
3
I
C
=500A
Turn-on energy per pulse - E
(on)
(mJ)
Turn-off delay time - t
d(off)
(µs)
600
V
CE
=900V
2
I
C
=300A
400
V
CE
=600V
1
200
T0500NA25E
issue 2
0
10
15
20
25
30
35
40
45
Gate resistance - R
G(off)
(Ω)
Ω
T0500NA25E
issue 2
0
0
100
200
300
400
500
600
Collector current - I
C
(A)
Provisional Data Sheet T0500NA25E Issue 2
Page 4 of 7
March, 2003
WESTCODE
An IXYS Company
Figure 9 – Typical turn-on energy vs. di/dt
2000
V
CE
=1250V
V
GE
=±15V
T
j
=125°C
500
Insulated Gate Bi-polar Transistor Type T0500NA25E
Figure 10 – Typical turn-off energy vs. collector
current
600
R
G(off)
=15
Ω
V
GE
=±15V
T
j
=125°C
V
CE
=1250V
1500
Turn-on energy per pulse - E
(on)
(mJ)
Turn-on energy per pulse - E
(off)
(mJ)
400
V
CE
=900V
1000
I
C
=500A
300
V
CE
=600V
200
500
I
C
=300A
100
T0500NA25E
issue 2
0
200
0
T0500NA25E
issue 2
0
100
200
300
400
500
600
400
600
800
1000
1200
1400
Commutation rate - di/dt (A/µs)
Collector current - I
C
(A)
Figure 11 – Turn-off energy vs voltage
600
R
G(off)
=15Ω
V
GE
=±15V
T
j
=125°C
500
I
C
=360A
Figure 12 – Safe operating area
1200
V
GE
=±15V
T
j
=125°C
1000
Turn-off energy vs voltage - E
off
(mJ)
400
Collector current - I
C
(A)
I
C
=200A
800
300
600
200
I
C
=100A
400
100
200
T0500NA25E
issue 2
0
0
500
1000
1500
2000
T0500NA25E
issue 2
0
Collector-emitter voltage - V
CE
(V)
0
1000
2000
3000
4000
Gollector-emitter voltage - V
CE
(V)
Provisional Data Sheet T0500NA25E Issue 2
Page 5 of 7
March, 2003
