TC75W60FU/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC75W60FU, TC75W60FK
Dual Operational Amplifier
TC75W60FU
Features
•
•
•
•
•
High slew rate
: SR (V
DD
= 3 V)
=
5.1 V/μs (typ.)
Single and dual power Supply operations are possible.
: V
DD
= ±0.9
to 3.5 V or 1.8 to 7 V
Lower supply current than general-purpose bipolar type op amps
: I
DD
(V
DD
= 3 V)
=
660
μA
(typ.)
The internally phase compensated operational amplifier.
Small package
TC75W60FK
Weight
SSOP8-P-0.65 : 0.021 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
Differential input voltage
Input voltage
Power dissipation
TC75W60FU
TC75W60FK
Symbol
V
DD
, V
SS
DV
IN
V
IN
P
D
T
opr
T
stg
Rating
7
±
7
V
DD
to V
SS
250
200
−40
to 85
−55
to 125
Unit
V
V
V
mW
°C
°C
Operating temperature
Storage temperature
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
TC75W60FU/FK
Marking
(top view)
TC75W60FU
8
7
6
5
Type name
Lot No.
TC75W60FK
8
7
6
5
Pin Connection (top view)
V
DD
8
OUT IN (−) IN (+)
7
6
5
5W60
5W
60
1
2
3
4
1
2
3
4
OUT IN (−) IN (+) V
SS
1
2
3
4
Electrical Characteristics
DC Characteristics
(V
DD
=
3.0 V, V
SS
=
GND, Ta
=
25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Common mode rejection ratio
Suuply voltage rejection ratio
Supply current
Source current
Sink current
Symbol
V
IO
I
IO
I
I
CMV
IN
G
V
V
OH
V
OL
CMRR
SVRR
I
DD
I
source
I
sink
Test
Circuit
⎯
⎯
⎯
Test Condition
R
S
=
1 kΩ
⎯
⎯
⎯
⎯
R
L
=
100 kΩ
R
L
=
100 kΩ
V
IN
=
0.0 to 2.1 V
V
DD
=
1.8 to 7.0 V
⎯
⎯
⎯
Min
⎯
⎯
⎯
0.0
60
2.9
⎯
54
60
⎯
330
600
Typ.
2
1
1
⎯
70
⎯
⎯
70
70
660
700
1250
Max
7
⎯
⎯
2.1
⎯
⎯
0.1
⎯
⎯
1000
⎯
⎯
Unit
mV
pA
pA
V
dB
V
dB
dB
μA
μA
μA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
DC Characteristics
(V
DD
=
1.8 V, V
SS
=
GND, Ta
=
25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
maximum output voltage
Common mode rejection ratio
Supply current
Source current
Sink current
Symbol
V
IO
I
IO
I
I
CMV
IN
G
V
V
OH
V
OL
CMRR
I
DD
I
source
I
sink
Test
Circuit
Test Condition
R
S
=
1 kΩ
⎯
⎯
⎯
⎯
R
L
=
100 kΩ
R
L
=
100 kΩ
V
IN
=
0.3 to 0.9 V
⎯
⎯
⎯
Min
⎯
⎯
⎯
0.3
⎯
1.7
⎯
50
⎯
300
550
Typ.
2
1
1
⎯
70
⎯
⎯
60
600
700
1150
Max
7
⎯
⎯
0.9
⎯
⎯
0.1
⎯
900
⎯
⎯
Unit
mV
pA
pA
V
dB
V
dB
μA
μA
μA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
2007-11-01
TC75W60FU/FK
AC Characteristics
(V
DD
=
3.0 V, V
SS
=
GND, Ta
=
25°C)
Characteristics
Slew rate
Unity gain cross frequency
Symbol
SR
f
T
Test
Circuit
⎯
⎯
Test Condition
⎯
⎯
Min
⎯
⎯
Typ.
5.1
3.7
Max
⎯
⎯
Unit
V/μs
MHz
AC Characteristics
(V
DD
=
1.8 V, V
SS
=
GND, Ta
=
25°C)
Characteristics
Slew rate
Unity gain cross frequency
Symbol
SR
f
T
Test
Circuit
⎯
⎯
Test Condition
⎯
⎯
Min
⎯
⎯
Typ.
4.0
3.0
Max
⎯
⎯
Unit
V/μs
MHz
TEST CIRCUIT
(1)
SVRR, VIO
V
DD
R
F
R
S
V
OUT
R
S
R
F
•
•
SVRR
V
DD
=
1.5 V : V
DD
=
V
DD
1, V
OUT
= V
OUT
1
V
DD
=
7.0 V : V
DD
=
V
DD
2, V
OUT
= V
OUT
2
⎛
V
1
−
V OUT 2
RS
SVRR
=
20
l
og
⎜
OUT
×
⎜
V 1
−
V
RF
+
RS
DD
DD 2
⎝
⎞
⎟
⎟
⎠
V
IO
⎛
RS
VDD
⎞
⎟×
VIO
= ⎜
V OUT
−
⎜
⎟
R
+
R
2
⎠
⎝
F
S
V
DD
/2
(2)
CMRR, CMVIN
V
DD
R
F
R
S
V
OUT
R
F
V
IN
R
S
•
CMRR
V
IN
=
0.0 V : V
IN
=
V
DD
1, V
OUT
= V
OUT
1
V
IN
=
2.5 V : V
IN
=
V
DD
2, V
OUT
= V
OUT
2
⎛
V
1
−
V OUT 2
RS
CMRR
=
20
l
og
⎜
OUT
×
⎜
RF
+
RS
VIN1
−
VIN 2
⎝
⎞
⎟
⎟
⎠
•
CMV
IN
V
DD
/2
3
2007-11-01
TC75W60FU/FK
(3) VOH
V
DD
•
V
OH
VIN1
=
VDD
−
0.05 V
2
V
OH
R
L
VIN2
=
VDD
+
0.05 V
2
V
IN1
V
IN2
(4) VOL
V
DD
•
V
OL
VIN1
=
VDD
+
0.05 V
2
VDD
−
0.05 V
2
R
L
V
OL
VIN2
=
V
IN1
V
IN2
(5)
IDD
V
DD
M
I
DD
V
DD
/2
(6) Isource
(7)
I
sink
V
DD
V
DD
M
M
V
DD
2
V
DD
−
0.1 V
2
4
2007-11-01
TC75W60FU/FK
I
DD
– V
DD
1000
Ta
=
85°C
2.0
I
sink
– V
DD
(μA)
(mA)
800
1.6
Ta
= −40°C
I
DD
600
Ta
= −40°C
Ta
=
25°C
I
sink
1.2
Ta
=
25°C
0.8
Ta
=
85°C
Supply current
400
200
VSS
=
GND
VIN
=
VDD/2
0
0
1
2
3
4
5
6
7
Sink current
0.4
VSS
=
GND
0
0
1
2
3
4
5
6
7
Supply voltage
V
DD
(V)
Supply voltage
V
DD
(V)
V
OL
– I
sink
2.0
3
Ta
=
85°C
1.6
V
OL
– I
sink
(V)
(V)
Ta
=
85°C
V
OL
V
OL
2
“L” level output voltage
1.2
Ta
= −40°C
“L” level output voltage
Ta
=
25°C
Ta
=
25°C
Ta
= −40°C
0.8
1
0.4
VDD
=
1.8 V
VSS
=
GND
0
0
0.5
1.0
1.5
VDD
=
3 V
0
0
VSS
=
GND
0.5
1.0
1.5
Sink current
I
sink
(mA)
Sink current
I
sink
(mA)
V
OL
– I
sink
5
1.5
VDD
=
5 V
4
Ta
=
85°C
I
source
– V
DD
(V)
I
source
(mA)
VSS
=
GND
V
OL
1.0
“L” level output voltage
3
Ta
=
25°C
Ta
= −40°C
Ta
=
85°C
Source current
Ta
=
25°C
Ta
= −40°C
0.5
2
1
VSS
=
GND
0
0
1
2
3
4
5
6
7
0
0
0.5
1.0
1.5
Sink current
I
sink
(mA)
Supply voltage
V
DD
(V)
5
2007-11-01
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