PRELIMINARY
March 2001
TIM5964-60SL-251
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
3rd Order Intermodulation
Distortion
NOTE :
Two Tone Test,
Po= 36.5dBm
(Single Carrier Level)
Recommended Gate Resistance(Rg) : 28
Ω
(Max.)
( Ta= 25
°
C )
MIN. TYP. MAX. UNIT
47.0 48.0
dBm
dB
A
%
dBc
SYMBOL
P
1dB
CONDITION
V
DS
= 10V
G
1dB
I
DS
f= 5.9–6.75GHz
IDS set = 9.5A
7.5
8.5
13.2 15.0
41
η
add
IM
3
NOTE
-40
2. ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
Channel-Temperature
Rise
SYMBOL
g
m
V
GSoff
I
DSS
V
GSO
( Ta= 25
°
C )
MIN. TYP. MAX. UNIT
-1.0
-5
20
-1.8
24
0.6
-3.0
31
S
V
A
V
CONDITION
V
DS
= 3V
I
DS
= 12A
V
DS
= 3V
I
DS
= 200mA
V
DS
= 3V
V
GS
= 0V
I
GS
= -1.0mA
R
th(c-c)
Channel to Case
∆T
ch
V
DS
×I
DS
×R
th(c-c)
0.8
°C/W
90
°C
The specifications contained herein are subject to change without notice.
PRELIMINARY
March 2001
3. ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
( Ta= 25°C )
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
RATING
15
-5
31
125
175
-65
∼
+175
UNIT
V
V
A
W
°
C
°
C
PACKAGE OUTLINE (2-16G1B)
0.7
±
0.15
4 – C1.0
2.5 MIN.
Unit in mm
: Gate
: Source
17.4
±
0.4
8.0
±
0.2
: Drain
20.4
±
0.3
+0.1
0.1 -
0.05
24.5 MAX.
16.4 MAX.
2.5 MIN.
0.2 MAX.
1.4
±
0.3
2.4
±
0.3
5.5 MAX.
Applications Engineering
Solid-State Engineering Department
TOSHIBA CORPORATION, Komukai Operations
2.6
±
0.3
