MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
TIM7179-8UL
HIGH POWER
P1dB=39.5dBm at 7.1GHz to 7.9GHz
HIGH GAIN
G1dB= 9.0dB at 7.1GHz to 7.9GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
°
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
I
DS2
∆Tch
I
DS1
∆G
G
1dB
V
DS
= 10
V
dB
A
dB
%
Two Tone Test
Po= 28.5dBm
(Single Carrier Level)
SYMBOL
P
1dB
CONDITION
UNIT MIN. TYP. MAX.
dBm
38.5
8.0
-44
39.5
9.0
2.2
35
-47
2.2
2.6
±0.6
2.6
80
f
= 7.1 – 7.9GHz
η
add
IM
3
dBc
A
°C
V
DS
X
I
DS
X
R
th(c-c)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
°
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
V
GSoff
I
DSS
V
GSO
CONDITION
V
DS
= 3V
I
DS
= 3.0A
V
DS
=
3V
I
DS
= 30mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -100µA
UNIT MIN. TYP. MAX.
mS
1800
V
A
V
°C/W
-1.0
-5
-2.5
5.2
2.5
-4.0
7.0
3.5
R
th(c-c)
Channel to Case
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Apr. 2000
TIM7179-8UL
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°C)
Channel Temperature
Storage
( Ta= 25°C )
°
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
V
V
A
W
°C
°C
RATING
15
-5
7.0
37.5
175
-65
∼
+175
PACKAGE OUTLINE (2-11D1B)
0.6
±
0.15
4-C1.2
4.0 MIN.
Unit in mm
Gate
Source
Drain
12.9
±
0.2
17
±
0.3
21
±
0.2
11.0 MAX.
+0.1
0.1
-0.05
3.2
±
0.3
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
°
2
1.6
±
0.3
2.6
±
0.3
12
0.2 MAX.
5.0 MAX.
4.0 MIN.
TIM7179-8UL
RF PERFORMANCES
Output Power vs. Frequency
42
41
Po (dBm)
40
39
38
37
6.8
7
7.2
7.4
7.6
7.8
8
8.2
V
DS
= 10V
I
DS
≅
2.2A
Pin= 30.5dBm
Frequency (GHz)
Output Power vs. Input Power
42
41
40
39
Po (dBm)
38
37
36
35
34
33
24
f= 7.5GHz
V
DS
= 10V
I
DS
≅
2.2A
90
Po
80
70
60
50
ηadd
(%)
ηadd
40
30
20
10
0
26
28
30
Pin (dB m)
32
34
3
TIM7179-8UL
POWER DISSIPATION vs. CASE TEMPERATURE
50
40
30
P
T
(W)
20
10
0
0
40
80
Tc (℃)
120
160
200
IM
3
vs. OUTPUT POWER CHARACTERISTICS
-20
V
DS
= 10V
I
DS
≅
2.2A
f= 7.5GHz
∆
f= 5MHz
-30
IM
3
(dBc)
-40
-50
-60
24
26
28
30
32
34
Po(dBm), Single Carrier Level
4
DSP 与 ARM 处理器
