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TIP115/116/117
TIP115/116/117
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
•
•
•
•
High DC Current Gain : h
FE
=1000 @ V
CE
= -4V, I
C
= -1A (Min.)
Low Collector-Emitter Saturation Voltage
Industrial Use
Complementary to TIP110/111/112
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP115
: TIP116
: TIP117
Value
- 60
- 80
- 100
- 60
- 80
- 100
-5
-2
-4
- 50
2
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
mA
W
W
°C
°C
R1
R2
E
Equivalent Circuit
C
B
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP115
: TIP116
: TIP117
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
R
1
≅
10
k
Ω
R
2
≅
0.6
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP115
: TIP116
: TIP117
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
I
CBO
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CB
= -100V, I
E
= 0
V
BE
= -5V, I
C
= 0
V
CE
= -4V,I
C
= -1A
V
CE
= -4V, I
C
= -2A
I
C
= -2A, I
B
= -8mA
V
CE
= -4V, I
C
= -2A
V
CB
= -10V, I
E
= 0, f = 0.1MHz
1000
500
-2.5
-2.8
200
V
V
pF
-1
-1
-1
-2
mA
mA
mA
mA
V
CE
= -30V, I
B
= 0
V
CE
= -40V, I
B
= 0
V
CE
= -50V, I
B
= 0
-2
-2
-2
mA
mA
mA
Test Condition
I
C
= -30mA, I
B
= 0
Min.
-60
-80
-100
Max.
Units
V
V
V
I
CEO
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TIP115/116/117
Typical Characteristics
-5
10k
I
B
= -1000 uA
I
B
= -900 uA
V
CE
= -4V
I
C
[A], COLLECTOR CURRENT
-4
I
B
= -800 uA
I
B
= -700 uA
I
B
= -600 uA
I
B
= -300 uA
I
B
= -200 uA
h
FE
, DC CURRENT GAIN
I
B
A
00 u
= -4
1k
-3
I
B
= -500 uA
-2
I
B
= -100 uA
-1
100
-0
-0
-1
-2
-3
-4
-5
10
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-100
1000
I
C
= 500 I
B
f = 0.1 MHz
C
ob
[pF], CAPACITANCE
-10
100
V
BE
(sat)
-1
10
V
CE
(sat)
-0.1
-0.01
-0.1
-1
-10
1
-0.01
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
-10
80
70
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-100
60
s
1m
DC
-1
TIP 115
TIP 116
-0.1
-1
-10
TIP 117
0
0
25
50
o
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
s
5m
50
40
30
20
10
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TIP115/116/117
Package Demensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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QT Optoelectronics™
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
