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TIP122TU

5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 100 V, NPN, 硅, 功率晶体管, TO-220AB

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconduc
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
TO-220
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
制造商包装代码
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code
compli
ECCN代码
EAR99
最大集电极电流 (IC)
5 A
集电极-发射极最大电压
100 V
配置
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)
1000
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
65 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
November 2014
TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor
Equivalent Circuit
C
Features
• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127
B
1
TO-220
2.Collector
3.Emitter
R1
R2
E
1.Base
R1
8kΩ
R2
0.12kΩ
Ordering Information
Part Number
TIP120
TIP120TU
TIP121
TIP121TU
TIP122
TIP122TU
Top Mark
TIP120
TIP120
TIP121
TIP121
TIP122
TIP122
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Rail
Bulk
Rail
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CBO
Collector-Base Voltage
Parameter
TIP120
TIP121
TIP122
TIP120
Value
60
80
100
60
80
100
5
5
8
120
150
-65 to 150
Unit
V
V
CEO
V
EBO
I
C
I
CP
I
B
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Junction Temperature
Storage Temperature Range
TIP121
TIP122
V
V
A
A
mA
°C
°C
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
Thermal Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
P
C
Parameter
Collector Dissipation (T
A
= 25°C)
Collector Dissipation (T
C
= 25°C)
Value
2
65
Unit
W
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CEO
(sus)
Parameter
TIP120
Collector-Emitter Sustaining
TIP121
Voltage
TIP122
TIP120
Collector Cut-Off Current
TIP121
TIP122
TIP120
Conditions
I
C
= 100 mA, I
B
= 0
V
CE
= 30 V, I
B
= 0
V
CE
= 40 V, I
B
= 0
V
CE
= 50 V, I
B
= 0
V
CB
= 60 V, I
E
= 0
V
CB
= 80 V, I
E
= 0
V
CB
= 100 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 3 V, I
C
= 0.5 A
V
CE
= 3 V, I
C
= 3 A
I
C
= 3 A, I
B
= 12 mA
I
C
= 5 A, I
B
= 20 mA
V
CE
= 3 V, I
C
= 3 A
V
CB
= 10 V, I
E
= 0,
f = 0.1 MHz
Min.
60
80
100
Max.
Unit
V
0.5
0.5
0.5
0.2
0.2
0.2
2
1000
1000
2.0
4.0
2.5
200
V
V
pF
mA
mA
mA
I
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
(1)
TIP121
TIP122
Collector-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
(1)
Output Capacitance
Note:
1. Pulse test: pw
300
μs,
duty cycle
2%.
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
2
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
Typical Performance Characteristics
10000
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= 4V
3.5
I
C
= 250I
B
3.0
h
FE
, DC CURRENT GAIN
2.5
1000
2.0
1.5
V
BE
(sat)
1.0
V
CE
(sat)
0.5
0.1
100
0.1
1
10
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
1000
f=0.1MHz
10
s
0
μ
10
μ
s
0
50
C
ob
[pF] C
ib
[pF], CAPACITANCE
s
1m
I
C
[A], COLLECTOR CURRENT
s
5m
DC
1
100
C
ob
C
ib
0.1
TIP120
TIP121
TIP122
10
0.1
1
10
100
0.01
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
3
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
Physical Dimensions
Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
Awinda
®
AX-CAP
®
*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficientMax
ESBC
®
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series
FACT
®
FAST
®
FastvCore
FETBench
FPS
F-PFS
FRFET
®
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
MotionGrid
®
MTi
®
MTx
®
MVN
®
mWSaver
®
OptoHiT
OPTOLOGIC
®
OPTOPLANAR
®
®
®*
PowerTrench
PowerXS™
Programmable Active Droop
QFET
®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM
®
STEALTH
SuperFET
®
SuperSOT -3
SuperSOT -6
SuperSOT -8
SupreMOS
®
SyncFET
Sync-Lock™
®
TinyBoost
®
TinyBuck
®
TinyCalc
TinyLogic
®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT
®
*
μSerDes
UHC
®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
Xsens™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. T
O OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE
AT
HTTP://WWW.FAIRCHILDSEMI.COM.
FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain
system whose failure to perform can be reasonably expected to
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I72
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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参数对比
与TIP122TU相近的元器件有:TIP121TU。描述及对比如下:
型号 TIP122TU TIP121TU
描述 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Brand Name Fairchild Semiconduc Fairchild Semiconduc
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
零件包装代码 TO-220 TO-220
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3
制造商包装代码 TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compli compli
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 5 A 5 A
集电极-发射极最大电压 100 V 80 V
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 1000 1000
JEDEC-95代码 TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3
JESD-609代码 e3 e3
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 65 W 65 W
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
Base Number Matches 1 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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