, O
ne.
10
STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
J.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Darlington Power Transistor
TIP146T
DESCRIPTION
• High DC Current Gain-
: h
FE
=1000(Min)@l
c
=-5A
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -SOV(Min)
• Complement to Type TIP141T
APPLICATIONS
• Designed for general purpose amplifier and low
frequency switching applications.
«••••• B
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCBO
VCEO
VEBO
Ic
ICM
IB
PC
Tj
•*- V—H ,'-" r
X
—-poO
-
-N
•2
{••
mm
M •V V
n
K...
<-vw ' * ' iV."
V y Tj
j
I
,
L Jiif
^—~
i
R
^"
13
j
|_ j
2
PIN 1.BASE
2. COLLECTOR
S.artlTTER
o
TO-220C package
M
tjoj
VALUE
-80
-80
-5
-10
-15
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25°C
Junction Temperature
Storage Temperature Range
UNIT
A
V
V
V
1
A
A
A
W
V
*
K
3~G/ L
;
t'
t
L
_H 1 .
I
CL
MI
G }•-
-K j
-H
c
I
t
DW
A
B
C
D
F
G
i
J
mm
WIN
MAX
-0.5
80
150
•c
-
c
Tstg
-55-150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
UNIT
'CM/
1.56
H
J
K
L
0
R
S
LI
V
15.70
0.00
4.20
0.70
3.40
4.08
2.70
0.44
13.20
1.10
2.70
2.50
1.20
6.45
8.66
15.00
10.10
4.40
0.00
3.60
5.18
2.00
0.46
13.40
1.30
2.00
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff current
Collector Cutoff current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
lc= -30mA, I
B
= 0
lc=-5A,l
B
=-10mA
lc=-10A,l
B
=-40mA
lc=-10A,l
B
=-40mA
lc=-10A;V
CE
=-4V
VCB= -80V, I
E
= 0
V
CE
= -40V, I
B
= 0
V
EB
= -5V; l
c
= 0
lc= -5A; VCE= -4V
lc=-10A; V
CE
=-4V
MIN
TIP146T
TYP.
MAX
UNIT
VcEO(SUS)
-80
-2.0
-3.0
-3.5
-3.0
-1
V
VcE(sat)-i
V
VcE(sat)-2
V
VeE(sat)
V
V BE(on)
V
ICBO
mA
ICEO
-2
mA
IEBO
-2
mA
hpE-1
hFE-2
1000
500
Switching Times
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
=-30V, I
C
=-5.0A,
lai= -Is2 = -20 rnA;
t
p
= 20 u s
Duty Cycle==20%
0.15
0.55
2.5
us
us
US
tstg
tf
2.5
M S
