MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
•
Collector–Emitter Saturation Voltage —
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
•
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — TIP31A, TIP32A
VCEO(sus)
= 80 Vdc (Min) — TIP31B, TIP32B
VCEO(sus)
= 100 Vdc (Min) — TIP31C, TIP32C
•
High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
•
Compact TO–220 AB Package
TIP31A
TIP31B*
TIP31C*
PNP
TIP32A
TIP32B*
TIP32C*
*Motorola Preferred Device
NPN
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*MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
TIP31A
TIP32A
60
60
TIP318
TIP32B
80
80
TIP31C
TIP32C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
3.0
5.0
1.0
Collector Current — Continuous
Peak
Base Current
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
Total Power Dissipation
@ TA = 25
_
C
Derate above 25
_
C
Unclamped Inductive
Load Energy (1)
PD
40
0.32
Watts
W/
_
C
Watts
W/
_
C
mJ
PD
2.0
0.016
32
E
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 – 100 VOLTS
40 WATTS
CASE 221A–06
TO–220AB
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJA
Max
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
62.5
_
C/W
_
C/W
R
θJC
3.125
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100
Ω..
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Bipolar Power Transistor Device Data
3–873
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
PD, POWER DISSIPATION (WATTS)
t, TIME (
µ
s)
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ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Vdc
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
60
80
100
—
—
—
—
—
—
—
—
—
—
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
TIP31A, TIP32A
TIP31B, TIP31C
TIP32B, TIP32C
ICEO
0.3
0.3
0.3
mAdc
ICES
µAdc
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
200
200
200
1.0
—
50
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
hFE
mAdc
—
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
25
10
—
—
Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
VCE(sat)
VBE(on)
fT
hfe
1.2
1.8
—
—
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
3.0
20
MHz
—
(1) Pulse Test: Pulse Width
v
300
µs,
Duty Cycle
v
2.0%.
TC
40
TA
4.0
30
3.0
TC
20
2.0
10
1.0
TA
0
0
0
20
40
60
100
80
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
TURN–ON PULSE
APPROX
+11 V
Vin 0
VEB(off)
APPROX
+11 V
Vin
t2
TURN–OFF PULSE
VCC
RC
Vin
RB
t1
t3
Cjd << Ceb
t1
≤
7.0 ns
100 < t2 < 500
µs
t3 < 15 ns
DUTY CYCLE
≈
2.0%
APPROX – 9.0 V
– 4.0 V
SCOPE
2.0
1.0
0.7
0.5
0.3
tr @ VCC = 30 V
tr @ VCC = 10 V
IC/IB = 10
TJ = 25°C
0.1
0.07
0.05
0.03
0.02
0.03
td @ VEB(off) = 2.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
3.0
Figure 2. Switching Time Equivalent Circuit
3–874
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
0.5
1.0
D = 0.5
0.2
0.1
0.05
0.02
Z
θJC(t)
= r(t) R
θJC
R
θJC
(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5.0
5.0 ms
2.0
1.0
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ
≤
150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED VCEO
TIP31C, TIP32C
1.0 ms
100
µs
0.2
0.1
5.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150
_
C. T J(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
100
10
20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3.0
2.0
ts
′
1.0
t, TIME (
µ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
tf @ VCC = 30 V
300
IB1 = IB2
IC/IB = 10
ts
′
= ts – 1/8 tf
TJ = 25°C
TJ = + 25°C
200
CAPACITANCE (pF)
tf @ VCC = 10 V
100
Ceb
70
50
Ccb
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
3.0
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 6. Turn–Off Time
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data
3–875
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
– 55°C
VCE = 2.0 V
2.0
TJ = 25°C
1.6
IC = 0.3 A
1.0 A
3.0 A
100
70
50
30
1.2
0.8
10
7.0
5.0
0.5 0.7 1.0
0.03 0.05 0.07 0.1
0.3
IC, COLLECTOR CURRENT (AMP)
0.4
3.0
0
1.0
2.0
5.0
10
20
50
100
IB, BASE CURRENT (mA)
200
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
TJ = 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
θ
VB FOR VBE
*θVC FOR VCE(sat)
*APPLIES FOR IC/IB
≤
hFE/2
TJ = – 65°C TO + 150°C
0
0.003 0.005 0.01 0.02 0.03 0.05
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
R BE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
Figure 11. Temperature Coefficients
103
IC, COLLECTOR CURRENT (
µ
A)
102
101
100
10–1
10–2
VCE = 30 V
TJ = 150°C
107
IC = 10 x ICES
IC
≈
ICES
VCE = 30 V
106
105
104
103
102
20
100°C
REVERSE
25°C
ICES
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
FORWARD
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40
60
80
100
120
140
160
10–3
– 0.4 – 0.3 – 0.2 – 0.1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
3–876
Motorola Bipolar Power Transistor Device Data
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Table 1. Plastic (Isolated TO–220 Type)
Device Type
ICCont
Amps
Max
1
2
VCEO(sus)
Volts
Min
250
400
700
1000
3
5
100
100
400
450
700
1000
1000
550
6
400
450
8
80
150
400
700
1200
700
1000
VCES
Volts
Min
hFE
Min/Max
30/150
14/34
14/34
@ IC
Amp
0.3
0.2
0.2
1
3
0.3
.005
0.3
0.5
0.5
0.5
2
3
5
1
1
4
4
3
1.5
8
Resistive Switching
ts
µs
Max
2 typ
2.75(3)
2.75(3)
0.6
1.5 typ
1.7(3)
4
1.7(3)
2.75(3)
2.5(3)
3.2(3)
0.5 typ
1 typ
3
2.5(3)
2.75(3)
—
0.5 typ
1.5 typ
2.75(3)
3
tf
µs
Max
0.17 typ
0.2(3)
0.175(3)
0.3
1.5 typ
0.15(3)
0.8
0.15(3)
0.2(3)
0.15(3)
0.15(3)
0.13 typ
0.15 typ
0.7
0.18(3)
0.18(3)
—
0.14 typ
1.5 typ
0.2(3)
0.7
3
8
@ IC
Amp
0.3
1
1
1
3
1
2.5
1
2
3
3
2
3
5
2
2
—
5
13 typ
12
14 typ
14 typ
4
30
4
14 typ
13 typ
2
40
20(1)
12
8
fT
MHz
Min
10
13 typ
13 typ
3
4(1)
12 typ
PD (Case)
Watts
@ 25°C
28
25
25
28
28
35
40
35
35
40
40
35
35
40
45
45
40
35
40
50
40
NPN
PNP
MJF47
BUL44F
MJF18002
MJF31C
MJF122
(2)
BUL45F
BUT11AF
MJF18004
MJF18204
BUL146F
MJF18006
MJF6107
MJF15030
MJF13007
BUL147F
MJF15031
MJF32C
MJF127
(2)
10 min
2000 min
14/34
10 min
14/34
18/35
14/34
14/34
30/90
40 min
5/30
14/34
16/34
450
10
60
80
100
450
12
400
1000
MJF18008
MJF3055
MJF44H11
MJF6388
(2)
MJF2955
MJF45H11
MJF6668
(2)
20/100
40/100
3k/20k
14/34
6/30
1000
700
MJF18009
MJF13009
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Bipolar Power Transistor Device Data
Selector Guide
2–3
